I. Introduction
There have been great demands for the balanced BAW devices as RF filters and duplexers in mobile communication systems for its high Q- factor and low noise characteristics. As wireless frequency resources are limited, band gap between uplink and downlink frequency is getting narrower, while band width is coming wider. Balanced RF structure has been widely demanded in the low noise amplifier (LNA), for its advantages of common-mode noise rejection, which leads to requirement of the post-LNA filter and balanced duplexer. Currently, most balanced duplexers and post-LNA filters are using surface acoustic wave (SAW) technology for its simple and easy fabrication process [1], [2]. However, SAW devices show a low Q- factor around a few hundreds and weak temperature stability, which makes it difficult to achieve narrow band gap duplexers such as Band Class 14 G-block (Transmit:1850–1915 MHz, Receive:1930–1995 MHz) that shows a fractional band gap lower than 1 %.