Author details
Author's Published Works
Scheduled Maintenance on Monday 1/13/2025
Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.
Author details
Showing 1-25 of 69 results
- Sort
Filter Results
Show
Sort By
Results
Symbiosis of Semiconductors, AI and Quantum Computing
S.W. Hwang;Seungju Han;W. Lee;W. Chang;J.H. Song;S.J. Kim;S. Park;H.J. Shin;J. Heo;Y.S. Choi;T. Ha;D. Lee;H. Lee;J. Lee;R. Ashcraft;G.H. Koh;H.K. Kang
2020 IEEE International Electron Devices Meeting (IEDM)
Year: 2020 | Conference Paper |
Cited by: Papers (2)
During last decade, various deep learning algorithms successfully broke the thick ice of AI winter so that they became an important part both in industries and daily lives [1]. They also invoked the development of AI accelerators (NPUs: neural processing units) that became a standard computing unit. This paper gives perspectives on various types of AI computing and device technology developments s...Show More
Electrically Reconfigurable Active Metasurface for 3D Distance Ranging
Sun Il Kim;Junghyun Park;Byung Gil Jeong;Duhyun Lee;Jungwoo Kim;Changgyun Shin;Chang Bum Lee;Tatsuhiro Otsuka;Sangwook Kim;Ki-Yeon Yang;Yong-Young Park;Jisan Lee;Inoh Hwang;Jaeduck Jang;Kyoungho Ha;Hyuck Choo;Byoung Lyong Choi;Sung-Woo Hwang
2020 IEEE International Electron Devices Meeting (IEDM)
Year: 2020 | Conference Paper |
Cited by: Papers (2)
For the first time, we have successfully demonstrated a 3-dimensional (3-D) depth scan using an electrically-tunable active metasurface, which is an array of plasmonic resonators with an active indium-tin-oxide (ITO) layer. Our active device can steer a beam in reflection with a positive side-mode suppression ratio by independently controlling the amplitude and the phase from 0 to 360° using two s...Show More
Electrically Reconfigurable Active Metasurface for 3D Distance Ranging
Sun Il Kim;Junghyun Park;Byung Gil Jeong;Duhyun Lee;Jungwoo Kim;Changgyun Shin;Chang Bum Lee;Tatsuhiro Otsuka;Sangwook Kim;Ki-Yeon Yang;Yong-Young Park;Jisan Lee;Inoh Hwang;Jaeduck Jang;Kyoungho Ha;Hyuck Choo;Byoung Lyong Choi;Sung-Woo Hwang
Year: 2020 | Conference Paper |
A Gain-Enhanced Silicon-Photonic Optical Phased Array with Integrated O-Band Amplifiers for 40-m Ranging and 3D Scan
Hyunil Byun;Jisan Lee;Bongyong Jang;Changbum Lee;Eunkyung Lee;Inoh Hwang;Changgyun Shin;Dongjae Shin;Dongshik Shim;Tatsuhiro Otsuka;Sungwoo Hwang;Hyuck Choo;Kyoungho Ha
2020 Conference on Lasers and Electro-Optics (CLEO)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
A Gain-Enhanced Silicon-Photonic Optical Phased Array with Integrated O-Band Amplifiers for 40-m Ranging and 3D Scan
Hyunil Byun;Jisan Lee;Bongyong Jang;Changbum Lee;Eunkyung Lee;Inoh Hwang;Changgyun Shin;Dongjae Shin;Dongshik Shim;Tatsuhiro Otsuka;Sungwoo Hwang;Hyuck Choo;Kyoungho Ha
Year: 2020 | Conference Paper |
Electrode-Adaptive Thin-Film Integrated Logic Circuits
Byeong Hyeon Lee;Kyung-Sang Cho;Ahrum Sohn;Sungwoo Hwang;Sang Yeol Lee
Amorphous oxide-based thin-film logic circuits have been fabricated using only an n-type amorphous silicon–zinc–tin–oxide (a-SZTO) channel layer with different source/drain electrodes. Enhancement-mode thin-film transistors (TFTs) were fabricated with oxide electrodes. Depletion-mode TFTs were fabricated with metal electrode. Work functions were measured by Kelvin probemicroscopy. The barrier heig...Show More
Cuff-Less Blood Pressure Estimation Using Pulse Waveform Analysis and Pulse Arrival Time
Young-Zoon Yoon;Jae Min Kang;Yongjoo Kwon;Sangyun Park;Seungwoo Noh;Younho Kim;Jongae Park;Sung Woo Hwang
Using the massive MIMIC physiological database, we tried to validate pulse wave analysis (PWA) based on multiparameters model whether it can continuously estimate blood pressure (BP) values on single site of one hand. In addition, to consider the limitation of insufficient data acquirement for home user, we used pulse arrival time (PAT) driven BP information to determine the individual scale facto...Show More
Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors
Keun Heo;Kyung-Sang Cho;Jun Young Choi;Sangmin Han;Yun Seop Yu;Yonmook Park;Gwangwe Yoo;Jin-Hong Park;Sung Woo Hwang;Sang Yeol Lee
In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coeff...Show More
Sub-terahertz slow-wave circuits for coherent radiation sources
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sang Hun Lee;Jun Hee Choi;Sunil Kim;Jong Min Kim;Sungwoo Hwang;So-Yeon Jeon;SeGi Yu;George Collins;M. E. Read;R. Lawrence Ives
2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC)
Year: 2016 | Conference Paper |
In this letter, we propose sub-terahertz (sub-THz) slow-wave circuits for coherent radiation sources through beam-wave interaction mechanism. The circuits are prepared using microfabrication in advanced silicon (Si) technologies. Our approach is to split the circuit into multi levels allowing a low aspect ratio configuration and alleviating the loading effect of deep-reactive-ion etching on silico...Show More
Colloidal quantum dot photonic crystal lasers with M-point band-edge emission
Hojun Chang;Kyungtaek Min;Myungjae Lee;Minsu Kang;Yeonsang Park;Kyung Sang Cho;Young-Geun Roh;Sungwoo Hwang;Heonsu Jeon
Summary form only given. Utilizing colloidal quantum dots (CQDs) as a gain material in a passive two-dimensional photonic crystal (PC) backbone structure, we have experimentally demonstrated room-temperature lasing operation at band-edge modes. A silicon nitride PC slab on silica substrate contains a square lattice array of air-holes, which is designed to have an in-plane, M-point low index band-e...Show More
Enhanced RF performance in multi-tunnel backward-wave oscillators
Chan-Wook Baik;Yongsung Kim;Ho Young Ahn;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Kyung-Sang Cho;Sunil Kim;R. Lawrence Ives;Jong Min Kim;Sungwoo Hwang
IEEE International Vacuum Electronics Conference
Year: 2014 | Conference Paper |
Cited by: Papers (1)
We propose an efficient beam-wave interaction circuit employing a multi-tunnel, slow-wave structure for W-band backward-wave oscillators. The tunnel is disposed one of above and below the beam tunnel, which enhances RF characteristics. The interaction circuit is prepared using a deep-reactive ion etched (DRIE), multi-level microfabrication on silicon wafers. The return loss shows strong resonances...Show More
Barrier Height at the Graphene and Carbon Nanotube Junction
Tae Geun Kim;Un Jeong Kim;Si Young Lee;Young Hee Lee;Yun Seop Yu;Sung Woo Hwang;Sangsig Kim
Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage chara...Show More
Local Crystallization of {\rm LaB}_{6} Yielding Compact, Strong Thermionic Electron Emission Source
Jun Hee Choi;Ho Young Ahn;Yun Sung Lee;Min Ho Yang;Chan-Wook Baik;Kyung Sang Cho;Sun Il Kim;Seong-Jun Jeong;Jong-Myeong Jeon;Miyoung Kim;Sungwoo Hwang
IEEE Electron Device Letters
Cited by: Papers (6)
Local microheating of amorphous LaB6 film could control the degree of crystallization as determined by spatially resolved Raman spectroscopy and transmission electron microscopy. With full crystallization of the LaB6, we achieved micrometer-sized thermionic electron emission source with the maximum current density of 1.2 A/cm2. The advantage of fabricating a micrometer-sized emitter with high curr...Show More
Experimental measurement of W-band backward-wave amplification driven by external pulsed signals
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Sunil Kim;George A. Collins;Lawrence Ives;Sungwoo Hwang
2013 IEEE 14th International Vacuum Electronics Conference (IVEC)
Year: 2013 | Conference Paper |
Cited by: Papers (2)
The experimental implementation of W-band backward-wave oscillator is achieved by using a multilevel microfabrication of interaction circuit including beam tunnel, slow-wave structure, and output transition, on deep reactive ion etched (DRIE) and metal deposited silicon wafers. The interaction circuit shows precise accuracy in full 3 dimensions, and the return loss measurement agrees well with HFS...Show More
Hybrid Bulk Acoustic Wave Structure for Temperature Stability in LTE Applications
Jea-Shik Shin;Insang Song;Chul-Soo Kim;Sang Uk Son;Moon-Chul Lee;Duck-Hwan Kim;Ho-Soo Park;Jing Cui;Yujie Ai;Sungwoo Hwang;Jae-Sung Rieh
A novel structure of hybrid bulk acoustic wave (BAW) resonator with low temperature coefficient of frequency (TCF) is presented. Implemented with a pair of quarter-wave reflectors on air-cavity reflector, the hybrid BAW resonator exhibits a TCF of as low as -11.5 ppm/°C and an effective electro-mechanical coupling coefficient (kt2) of 5.1% at the frequency of 2.5 GHz. The hybrid BAW resonator also...Show More
Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model
Faraz Najam;Yun Seop Yu;Keun Hwi Cho;Kyoung Hwan Yeo;Dong-Won Kim;Jong Seung Hwang;Sansig Kim;Sung Woo Hwang
Si/SiO2 interface trap charge distribution of cylindrical cross-sectioned gate-all-around silicon nanowire field-effect transistor is extracted by using three-dimensional simulation. While the interface chemistry of conventional gatestack ( Si/SiO2 polysilicon) in conventional planar devices is well documented, not much work is available on interface trap distribution Dit of alternate gatestacks (...Show More
Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
IEEE Electron Device Letters
Cited by: Papers (9)
Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The ba...Show More
Fabrication of suspended bridge type resonator using laser interference lithography
Boyeon Hwang;In-Sang Song;Jung Ho Park;Jea-Shik Shin;Jae-Sung Rieh;Sung-Woo Hwang;Byeong-kwon Ju
2012 7th European Microwave Integrated Circuit Conference
Year: 2012 | Conference Paper |
We report the fabrication method of suspended bridge type nanoelectromechanical system (NEMS) resonator for high quality factor (Q-factor) and increase in resonance frequency beyond the ultra-high frequency (UHF) by laser interference lithography (LIL) using silicon-on-insulator wafer. LIL is capable of a fast nano-patterning over a large area and does not require a mask. In fabricating a suspende...Show More
Observation of backward-wave oscillations in silicon-MEMS beam-wave interaction circuits at 0.1 THz
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Junhee Choi;Sunil Kim;Byoung Lyong Choi;George A. Collins;Lawrence Ives;Sungwoo Hwang
2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves
Year: 2012 | Conference Paper |
Cited by: Papers (1)
We report a W-band backward-wave oscillator using micro-fabrication technologies by which a fully 3-dimensional slow-wave interaction circuit is successfully employed on multi-bonded silicon wafers. MEMS (micro-electromechanical systems) technologies such as deep RIE (reactive ion etching) and thermocompressive hermetic bonding are applied to achieve highly accurate dimensional structures for high...Show More
Synthesized Aluminum Nanowires for Future Interconnects [Nanopackaging]
IEEE Nanotechnology Magazine
Cited by: Patents (1)
The current status of synthesized semiconductor and metallic nanowires is still far from practical applications. However, in many cases, they serve as good technological precursors because their size and various physical properties are beyond what are obtainable from their lithographically patterned counterparts. Recently, aluminum nanowires (AlNWs) without grain boundaries and surface roughness w...Show More
Measurement of femto-farad gate capacitance of a silicon nanowire FET using time-domain pulse response
D. W. Kim;H. T. Kim;D. H. Hwang;M. G. Kang;J. H. Lee;D. Whang;S. W. Hwang
2011 IEEE Nanotechnology Materials and Devices Conference
Year: 2011 | Conference Paper |
Cited by: Papers (3)
We present the direct measurement of the gate capacitance of a silicon nanowire field effect transistor using time-domain monitoring of the source current when the gate pulses with various frequencies and amplitudes are applied. The displacement current induced at the gate capacitance is proportional to the derivative of the gate pulse, and it becomes measurable when the rise time of the gate puls...Show More
Novel balanced RF duplexer using bulk acoustic wave resonator with low TCF structure
Jea-Shik Shin;Duck-Hwan Kim;Chul-Soo Kim;Sang Uk Son;Jae-Chun Lee;Hyung-Rak Kim;Jing Cui;Ho-Soo Park;Insang Song;Sung-Woo Hwang
A novel RF duplexer with balanced receiving output ports and low temperature coefficient of frequency (TCF) is proposed. The topology of balanced receiving RF filter is designed with both lattice and ladder type. RF resonators in this filter are designed based on a bulk acoustic wave (BAW) structure in which each layer has alternative negative and positive TCF values. The RF circuit block performi...Show More
Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge
B. H. Hong;N. Cho;S. J. Lee;Y. S. Yu;L. Choi;Y. C. Jung;K. H. Cho;K. H. Yeo;D.-W. Kim;G. Y. Jin;K. S. Oh;D. Park;S.-H. Song;J.-S. Rieh;S. W. Hwang
IEEE Electron Device Letters
Cited by: Papers (20)
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation...Show More
Implicit Continuous Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Including Interface Traps
An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numeri...Show More
Investigation of the Cause of a Malfunction in a Display Package and Its Solution
Jae Choon Kim;Dong Jin Lee;Sung Woo Hwang;Byeong-Kwon Ju;Sang Kyeong Yun;Heung-Woo Park;Jin Taek Chung
A piezo-actuated display package (PADP) with deformable mirror arrays is proposed for handheld applications of a micro-beam projection display. Temperature change is a critical factor affecting the performance of a PADP. To analyze temperature-related malfunctions, electrical, mechanical, and thermal analyses of the package are conducted simultaneously. A temperature control system using a micro-h...Show More
Fabrication of graphene field-effect transistors by simple stripping from CVD-grown layers
Jongseung Hwang;Jae-Hyun Lee;Jong-Cheol Lee;Dongmok Whang;Sung Woo Hwang
10th IEEE International Conference on Nanotechnology
Year: 2010 | Conference Paper |
We develop a simple technique to fabricate graphene field-effect-transistor (FET) devices. Our technique is stripping graphene by scotch tape from the chemical vapor deposition (CVD)-grown layer, except the gap region between the source and drain electrode. The current-voltage (I-V) characteristic of a graphene FET before stripping shows a large zero-bias conductance of 6.5 mS and no gate operatio...Show More
1-chip balanced FBAR filter for wireless handsets
Jea-shik Shin;Yun-kwon Park;Young-Il Kim;Chul-Soo Kim;Jae-Chun Lee;Duck-Hwan Kim;Hyung-rak Kim;Sung-woo Hwang;In-sang Song
There is great demand for ultra-miniature and balanced RF filters as an essential component in communication systems. To make these needs, we proposed 1-chip balanced FBAR RF filter in this work. A novel FBAR configuration is developed to reduce the area of FBAR block and to enhance performance. And a novel balanced filter topology which can work without trimming inductors is proposed to realize 1...Show More
IEEE Account
Purchase Details
Profile Information
Need Help?
- US & Canada: +1 800 678 4333
- Worldwide: +1 732 981 0060
- Contact & Support
- About IEEE Xplore
- Contact Us
- Help
- Accessibility
- Terms of Use
- Nondiscrimination Policy
- Sitemap
- Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.