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IEEE Journal of Selected Topics in Quantum Electronics
Issue 3 • Sept.-1996
Showing 1-25 of 38
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Introduction To The Issue On Ultrafast Electronics, Photonics, And Optoelectronics
Publication Year: 1996,Page(s):433 - 434
Cited by: Papers (2)
Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers
U. Keller;K.J. Weingarten;F.X. Kartner;D. Kopf;B. Braun;I.D. Jung;R. Fluck;C. Honninger;N. Matuschek;J. Aus der Au
Publication Year: 1996,Page(s):435 - 453
Intracavity semiconductor saturable absorber mirrors (SESAM's) offer unique and exciting possibilities for passively pulsed solid-state laser systems, extending from Q-switched pulses in the nanosecond and picosecond regime to mode-locked pulses from 10's of picoseconds to sub-10 fs. This paper reviews the design requirements of SESAM's for stable pulse generation in both the mode-locked and Q-swi...Show More
Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors
Publication Year: 1996,Page(s):454 - 464
We discuss mode-locking of low-gain solid-state lasers using a semiconductor saturable Bragg reflector structure. This recently developed low-loss mode-locking device consists of a single quantum well which acts as a saturable absorber incorporated into a high-reflectivity Bragg mirror. Highly stable mode-locking in solid-state lasers results from an ultrafast transient reflectivity in the device ...Show More
Femtosecond diode-pumped Cr:LiSGAF lasers
Publication Year: 1996,Page(s):465 - 472
Cited by: Papers (11)
The design and performance of diode-pumped Cr:LiSrGaAlF/sub 6/ lasers mode-locked by Kerr-lens mode-locking and a solid-state saturable absorber are described. The different regimes of operation of the laser mode-locked by the saturable absorber are discussed. Both lasers generate 100-fs pulses with average powers of 40 mW and low fluctuations.Show More
Mechanism for self-synchronization of femtosecond pulses in a two-color Ti:sapphire laser
Publication Year: 1996,Page(s):473 - 479
Cited by: Papers (67)
An experimental and theoretical analysis of the nonlinear coupling mechanism between the two solitary pulses circulating in a two-color femtosecond laser is presented. Two operation regimes; synchronized; and nonsynchronized; and a hysteresis of the transition between the two regimes are clearly observed; while independent modelocking and tunability of the output pulse trains is found in both regi...Show More
Higher order chirp compensation of femtosecond mode-locked semiconductor lasers using optical fibers with different group-velocity dispersions
Publication Year: 1996,Page(s):480 - 486
Cited by: Papers (19)
Higher order chirp compensation of optical short pulses by using two types of optical fibers with different group-velocity dispersions was theoretically and experimentally investigated in detail. By optimizing the lengths of two types of optical fibers, both second- and third-order dispersion of chirped optical pulses were found to be simultaneously compensated. Pulse-compression experiments with ...Show More
Generation of mid-infrared pulses suitable for two-color IR-spectroscopy with 300-fs time resolution, temporal analysis via two-photon absorption in germanium and first application
Publication Year: 1996,Page(s):487 - 492
Cited by: Papers (20)
The generation of two independently tunable light pulses in the mid-infrared spectral region is reported here. Synchronously pumping two optical parametric oscillators in parallel with a flashlamp-pumped, pulsed Nd:YLF laser delivers tunable radiation in the range 1.2-1.7 /spl mu/m with duration of 300 fs. Subsequent parametric amplification in AgGaS/sub 2/ crystals yields intensive light pulses i...Show More
Femtosecond optical pulse generation using quasi-velocity-matched electrooptic phase modulator
Publication Year: 1996,Page(s):493 - 499
Cited by: Papers (38)
Ultrashort optical pulses in the femtosecond range were generated from a continuous-wave (CW) narrow linewidth laser by using the chirping compression method with a highly efficient electrooptic phase modulator. Before the femtosecond pulse generation, a high modulation index electrooptic modulator specially designed was fabricated by employing the quasi-velocity-matching. In the pulse generation ...Show More
Nonlinear optical compression of Er/sup 3+/-fiber amplified 1.5-/spl mu/m laser diode pulses
Publication Year: 1996,Page(s):500 - 507
Cited by: Papers (6)
Femtosecond optical pulses of 110-200-fs width have been produced using a gain-switched distributed-feedback semiconductor laser followed successively by a linear compression stage and a nonlinear compression stage. Analysis is focused on this last stage where pulses with peak powers corresponding to 10and 12-order solitons are fed at the fiber input end. Experimental results are well described us...Show More
Experimental investigations of harmonic synchronization conditions and mechanisms of mode-locked laser diodes induced by optical-pulse injection
Publication Year: 1996,Page(s):508 - 513
Cited by: Papers (26)
We investigated the detailed characteristics of synchronization of mode-locked laser diodes (MLLD's) by subharmonic optical pulse injection. It was shown that optical harmonic injection mode-locking was not very sensitive to injection pulse shapes. In the time domain, subharmonic injection pulses were multiplexed inside the MLLD and these multiplexed pulses effectively modulated the absorbance of ...Show More
Subharmonic hybrid mode-locking of a monolithic semiconductor laser
Publication Year: 1996,Page(s):514 - 522
Performance of a subharmonically hybrid mode-locked (SH-ML) monolithic semiconductor laser is investigated. A 33-GHz passively mode-locked distributed Bragg reflector semiconductor laser is stabilized by the injection of an electrical signal with a subharmonic frequency of the laser cavity resonance. Systematic measurements on the phase noise, timing jitter, amplitude modulation, and locking bandw...Show More
Femtosecond self- and cross-phase modulation in semiconductor laser amplifiers
M.Y. Hong;Y.H. Chang;A. Dienes;J.P. Heritage;P.J. Delfyett;S. Dijaili;F.G. Patterson
Publication Year: 1996,Page(s):523 - 539
We present detailed derivation of our new model for femtosecond pulse amplification in semiconductor laser amplifiers. The various dynamic nonlinear terms of gain compression and associated self-phase modulation are derived semiphenomenologically, and are discussed physically. Included are the effects of carrier depletion, carrier heating and spectral hole-burning, as well as linear and two photon...Show More
We investigate ultrashort pulse generation based on the fundamental soliton generation that is stabilized by a saturable absorber. The case of an absorber with a recovery time much longer than the pulsewidth of the generated soliton is investigated in detail. Based on soliton perturbation theory we derive equations for the soliton variables and the continuum generated in a mode-locked laser. Analy...Show More
Actively mode-locked strained-InGaAsP multiquantum-well lasers integrated with electroabsorption modulators and distributed Bragg reflectors
Publication Year: 1996,Page(s):557 - 565
This paper describes picosecond pulse generation at 20 Gb/s by monolithic mode-locked lasers integrated with electroabsorption modulators and distributed Bragg reflectors. The electroabsorption modulator using strained-InGaAsP multiquantum wells acts as a pulse shortening gate when a sinusoidal voltage is driven at a large reverse bias voltage. To obtain transform-limited picosecond pulses, the re...Show More
Ultrahigh-frequency self-pulsations under gain-switching modulation in 1.5-/spl mu/m dynamical single-mode monolithic compound-cavity semiconductor lasers: Experiment and theory
Publication Year: 1996,Page(s):566 - 574
Cited by: Papers (3)
The generation of 50-130-GHz high-frequency self-pulsations in ultrafast gain-switched InGaAs-InGaAsP dynamical single-mode monolithic compound-cavity lasers is studied in this paper. With various cavity lengths, the dependence of the pulsation frequency on the length of the respective cavity is shown and analyzed in detail. To explain the observed phenomena, a dynamic theory of the semiconductor ...Show More
Measurement of 10-fs laser pulses
G. Taft;A. Rundquist;M.M. Murnane;I.P. Christov;H.C. Kapteyn;K.W. DeLong;D.N. Fittinghoff;M.A. Krumbugel;J.N. Sweetser;R. Trebino
Publication Year: 1996,Page(s):575 - 585
We report full characterization of the intensity and phase of /spl sim/10-fs optical pulses using second-harmonic-generation frequency-resolved-optical-gating (SHG FROG). We summarize the subtleties in such measurements, compare these measurements with predicted pulse shapes, and describe the implications of these measurements for the creation of even shorter pulses. We also discuss the problem of...Show More
Optoelectronic on-chip characterization of ultrafast electric devices: Measurement techniques and applications
T. Pfeifer;H.-M. Heiliger;T. Loffler;C. Ohlhoff;C. Meyer;G. Lupke;H.G. Roskos;H. Kurz
Publication Year: 1996,Page(s):586 - 604
A comprehensive description of a modular optoelectronic measurement system for the characterization of high-frequency microelectronic devices and circuits is presented. Depending on application, specific techniques to generate, synchronize to, and detect high-frequency electric signals are combined covering a frequency range of more than three orders of magnitudes from 2 to 4000 GHz. We discuss on...Show More
A new method for rapid temporal scanning of ultrafast lasers
Publication Year: 1996,Page(s):605 - 621
Using an identical pair of passively mode-locked fiber lasers, we demonstrate a new method of temporal scanning by periodically varying the cavity length of one laser. This scanning temporal ultrafast delay (STUD) technique produces scanning performance far exceeding that obtainable with conventional, mechanical scanning: For a pair of 5-MHz lasers, we obtain a scan range of /spl Delta/T=10 ns at ...Show More
A simple and accurate design method for traveling-wave photodetectors is presented and illustrated by example. Fully distributed, hybrid-coplanar, traveling-wave photodetectors are designed. Linear and nonlinear responses are measured, and linear responses are compared with design predictions. Record bandwidths of 190 GHz and record bandwidth-efficiency products of 84 GHz are measured. Behavior un...Show More
Ultrafast response of As-implanted GaAs photoconductors
H.-H. Wang;P. Grenier;J.F. Whitaker;H. Fujioka;J. Jasinski;Z. Liliental-Weber
Publication Year: 1996,Page(s):630 - 635
Cited by: Papers (9)
The photoconductive response of an optoelectronic switch fabricated from GaAs implanted with arsenic ions is measured to have a duration as short as 0.7 ps and a relaxation time as fast as 0.5 ps. The switching efficiency and relaxation time of the photoswitches using the As-implanted GaAs substrates are determined to be comparable to photoconductive devices employing GaAs grown by low-temperature...Show More
Ion-implanted GaAs for subpicosecond optoelectronic applications
Hark Hoe Tan;C. Jagadish;K.P. Korona;J. Jasinski;M. Kaminska;R. Viselga;S. Marcinkevicius;A. Krotkus
Publication Year: 1996,Page(s):636 - 642
Ion implantation is shown to be able to shorten the carrier lifetime in semi-insulating GaAs independent of the ion species. Although ion implantation alone may shorten the lifetime to the order of femtoseconds, to obtain good resistivity and mobility an annealing process is required. Furthermore, chemically active ions may complicate the recovery of resistivity, such as Si which may be activated ...Show More
10-80-Gb/s highly extinctive electrooptic pulse pattern generation
Publication Year: 1996,Page(s):643 - 649
A pulse-rate-tunable, highly extinctive, ultra-highspeed electrooptic pulse pattern generator has been developed. The optical short pulse generation is based on sinusoidal electrooptic phase modulation and linear chirp compensation using a dispersive medium. Filtering the nonlinear chirp components generated by sinusoidal phase modulation drastically improves the pulse extinction, and makes nearly...Show More
A novel 3-D integrated HFET/RTD frequency multiplier
U. Auer;W. Prost;G. Janssen;M. Agethen;R. Reuter;F.J. Tegude
Publication Year: 1996,Page(s):650 - 654
Cited by: Papers (17)
A merged heterostructure field-effect transistor/resonant tunneling diode (HFET/RTD) combination is proposed to act as a (sub)millimeter wave source via highly efficient frequency multiplication and its functionality is demonstrated at intermediate frequency. On a semi-insulating InP-substrate a HFET followed by a double barrier RTD-layer sequence is grown in a single molecular beam epitaxy (MBE)-...Show More
Ultrafast all-optical switching in multiple-quantum-well Y-junction waveguides at the band gap resonance
Publication Year: 1996,Page(s):655 - 660
Cited by: Papers (4)
An integrated Y-junction switch is used to demonstrate all-optical switching due to two mechanisms in GaAs-AlGaAs multiple quantum well structures at room temperature. Carrier-induced nonlinearities are compared to nonlinearities due to the optical Stark effect for ultrafast operation. In the first case, device geometry is exploited by a two-pulse switching process, whereby one control pulse turns...Show More
Ultrafast all-optical spin polarization switch using quantum-well etalon
Publication Year: 1996,Page(s):661 - 667
Ultrafast all-optical switch is proposed and demonstrated using picoseconds spin-polarization relaxation in a multiple-quantum-well (MQW) etalon structure. The decay time of the conventional all-optical switching in MQW etalon is restricted by the carrier lifetime, typically in nanoseconds. Using carrier spin relaxation, the polarization change of the probe beam has been demonstrated to be switche...Show More
Contact Information
Editor-in-Chief
Qiaoqiang Gan
Professor
King Abdullah University of Science & Technology (KAUST)
Thuwal
Saudi Arabia
qiaoqiang.gan@kaust.edu.saContact Information
Editor-in-Chief
Qiaoqiang Gan
Professor
King Abdullah University of Science & Technology (KAUST)
Thuwal
Saudi Arabia
qiaoqiang.gan@kaust.edu.saIEEE Account
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