Microwaves in Europe

An overview of microwave activities and infrastructures in Europe is presented. The material is organized in 17 sections, each devoted to a country or group of countries and prepared by an. internationally renowned microwave expert. In general, each section contains some history of microwaves in the region, and highlights some microwave activities in association with research centers, laboratories and institutions, industry, education, and national conferences.

I. Nomenclature

AlGaAs

Aluminum GaAs.

BiCMOS

Bipolar CMOS.

BWT

Backward-wave tube.

CMOS

Complimentary metal–oxide semiconductor.

EM

Electromagnetic.

EW

Electronic warfare.

FET

Field-effect transistor.

FM CW

Frequency modulation continuous wave.

GaAs

Gallium arsenide.

Ge

Germanium.

HBT

Heterojunction bipolar transistor.

HEMT

High electron-mobility transistor.

IMPATT

Impact avalanche and transit time.

InP

Indium phosphide.

LDMOS

Lateral diffused metal–oxide semiconductor.

MASER

Microwave amplification by stimulated emission of radiation.

MBE

Molecular beam epitaxy.

MCM

Monte Carlo method.

MEMS

Microelectromechanical structures.

MESFET

Metal–semiconductor FET.

MIC

Microwave integrated circuit.

MMIC

Monolithic microwave integrated circuit.

RF

Radio frequency.

Si

Silicon.

SiC

Silicon carbide.

SIS

Superconductor–insulator–superconductor.

TED

Transferred electron device.

TEGFET

Two-dimensional electron gas field-effect transistor.

TWT

Traveling-wave tube.