Contents I. Nomenclature
AlGaAs
Aluminum GaAs.
BiCMOSBipolar CMOS.
BWTBackward-wave tube.
CMOSComplimentary metal–oxide semiconductor.
EMElectromagnetic.
EWElectronic warfare.
FETField-effect transistor.
FM CWFrequency modulation continuous wave.
GaAsGallium arsenide.
GeGermanium.
HBTHeterojunction bipolar transistor.
HEMTHigh electron-mobility transistor.
IMPATTImpact avalanche and transit time.
InPIndium phosphide.
LDMOSLateral diffused metal–oxide semiconductor.
MASERMicrowave amplification by stimulated emission of radiation.
MBEMolecular beam epitaxy.
MCMMonte Carlo method.
MEMSMicroelectromechanical structures.
MESFETMetal–semiconductor FET.
MICMicrowave integrated circuit.
MMICMonolithic microwave integrated circuit.
RFRadio frequency.
SiSilicon.
SiCSilicon carbide.
SISSuperconductor–insulator–superconductor.
TEDTransferred electron device.
TEGFETTwo-dimensional electron gas field-effect transistor.
TWTTraveling-wave tube.
