I. Introduction
Wideband receivers have attracted tremendous attention for high communication data rates. Especially, the broadband satellite communication working on X-band or C-band have motivated extensive studies on the wideband transceiver for wireless applications. As a critical component of the receiver, low-noise amplifier (LNA) determines the performance of the wireless system, especially the dynamic range and sensitivity. Due to the high-electron-mobility characteristics, devices in the III–V semiconductor process produce less noise than the silicon process. However, the development of advanced CMOS processes provides a high-integration low-cost solution for system-on-a-chip (SoC) applications. Different techniques have been proposed to effectively advance individual aspect of silicon-based LNA performance, such as input matching, noise figure (NF), or power gain [1]–[6]. However, it is very challenging to address all the key aspects simultaneously due to design tradeoffs, such as wide bandwidth, NF, gain flatness, linearity, and input matching.