Abstract:
The understanding of material quality and luminescence characteristics of InGaAs-GaAs quantum dots (QD's) is advancing rapidly. Intense work in this area has been stimula...Show MoreMetadata
Abstract:
The understanding of material quality and luminescence characteristics of InGaAs-GaAs quantum dots (QD's) is advancing rapidly. Intense work in this area has been stimulated by the recent demonstration of lasing from a QD active region at the technologically important 1.3-/spl mu/m wavelength from a GaAs-based heterostructure laser. Already, several groups have achieved low-threshold currents and current densities at room temperature from In(Ga)As QD active regions that emit at or close to 1.3 /spl mu/m. In this paper, we discuss crystal growth, QD emission efficiency, and low-threshold lasing characteristics for 1.3-/spl mu/m InGaAs-GaAs QD active regions grown using submonolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low-threshold current of 1.2 mA and threshold-current density of 19 A/cm/sup 2/ under continuous-wave (CW) room temperature (RT) operation. At 4 K, a remarkably low threshold-current density of 6 A/cm/sup 2/ is obtained.
Published in: IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 6, Issue: 3, May-June 2000)
DOI: 10.1109/2944.865100
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Active Region ,
- Crystal Growth ,
- Room Temperature Operation ,
- Energy Levels ,
- Atomic Force Microscopy ,
- Density Of States ,
- Waveguide ,
- Maximum Gain ,
- Higher Energy Level ,
- Electroluminescence ,
- Low Current Density ,
- Current Threshold ,
- Non-radiative Recombination ,
- Cavity Length ,
- Peak Efficiency ,
- Quantum Wells ,
- Cavity Mode ,
- Quantum Operations ,
- Lasing Threshold ,
- Wetting Layer ,
- Quantum Dots Layer ,
- Adiabatic Approximation ,
- Threshold Condition ,
- Buffer Layer ,
- Spontaneous Emission ,
- Dipole Strength ,
- Non-radiative Rate ,
- Higher Energy State ,
- Dot Density
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Active Region ,
- Crystal Growth ,
- Room Temperature Operation ,
- Energy Levels ,
- Atomic Force Microscopy ,
- Density Of States ,
- Waveguide ,
- Maximum Gain ,
- Higher Energy Level ,
- Electroluminescence ,
- Low Current Density ,
- Current Threshold ,
- Non-radiative Recombination ,
- Cavity Length ,
- Peak Efficiency ,
- Quantum Wells ,
- Cavity Mode ,
- Quantum Operations ,
- Lasing Threshold ,
- Wetting Layer ,
- Quantum Dots Layer ,
- Adiabatic Approximation ,
- Threshold Condition ,
- Buffer Layer ,
- Spontaneous Emission ,
- Dipole Strength ,
- Non-radiative Rate ,
- Higher Energy State ,
- Dot Density
