Abstract:
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown...Show MoreMetadata
Abstract:
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.
Published in: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Date of Conference: 22-25 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-6269-1
Print ISSN: 1063-6854
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Cites in Papers - IEEE (6)
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1.
Tanuj Saxena, Christian Torrent, Vishnu Khemka, Ganming Qin, Mark Gibson, "Charge Balance and UIS Robustness of Trench Field Plate Power MOSFETs", 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.9-12, 2022.
2.
Min Ren, Yining Ma, Shengrong Zhong, Wei Li, Songrong Wu, Zehong Li, Wei Gao, Bo Zhang, "Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition", 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), pp.1-4, 2019.
3.
M. Riccio, E. Napoli, A. Irace, G. Breglio, P. Spirito, "Energy and current crowding limits in avalanche operation of IGBTs", 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.273-276, 2013.
4.
Giovanni Breglio, Andrea Irace, Ettore Napoli, Michele Riccio, Paolo Spirito, "Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching", IEEE Transactions on Electron Devices, vol.60, no.2, pp.563-570, 2013.
5.
In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Soo-Seong Kim, Min-Koo Han, Yearn-Ik Choi, "A new fault protection circuit of 600V PT-IGBT for the improved avalanche energy employing the floating p-well", Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., pp.87-90, 2005.
6.
P.M. Shenoy, J. Yedinak, J. Gladish, "High performance 300 V IGBTs", 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), pp.217-220, 2000.
