In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/c...Show More
Summary form only given. One experimental campaign planned for the pulse power facility, Atlas, will be devoted to the investigation of strongly-coupled plasma (SCP) effects on transport phenomena and equations-of-state in high-Z materials. Methods for forming strongly coupled plasmas using the pulsed-power facility, Atlas, are currently under investigation. For SCP experiments being planned, a me...Show More
