Abstract:
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown...Show MoreMetadata
Abstract:
In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.
Published in: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Date of Conference: 22-25 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-6269-1
Print ISSN: 1063-6854
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
Discrete Power Product Development, Lntersil Corporation, Mountaintop, PA, USA
