Abstract:
Two types of InAlGaAs quaternary well superlattice avalanche photodiodes have been developed. One is a polyimide-coated mesa structure with a high gain-bandwidth product ...Show MoreMetadata
Abstract:
Two types of InAlGaAs quaternary well superlattice avalanche photodiodes have been developed. One is a polyimide-coated mesa structure with a high gain-bandwidth product of over 120 GHz and a low multiplied dark current of a few tens of nanoamperes. Its reliability has been measured to be over 10/sup 5/ hours at 50/spl deg/C. The other is a planar structure with a new titanium-implanted guard-ring, which should have a longer lifetime than the mesa structure.
Date of Conference: 19-19 September 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:82-423-0418-1
Conference Location: Oslo, Norway
