Abstract:
The fabrication of an InGaAsP-InAlAs superlattice avalanche photodiode using a gas source molecular beam epitaxy is discussed. A quaternal alloy of InGaAsP was used for t...Show MoreMetadata
Abstract:
The fabrication of an InGaAsP-InAlAs superlattice avalanche photodiode using a gas source molecular beam epitaxy is discussed. A quaternal alloy of InGaAsP was used for the well layers in order to suppress the dark current due to the tunneling effect. With this structure, the valance band discontinuity almost vanishes and a gain bandwidth of 110 GHz was obtained.<>
Published in: IEEE Journal of Quantum Electronics ( Volume: 28, Issue: 6, June 1992)
DOI: 10.1109/3.135291
