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Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 44, Issue: 5, May 1996)
DOI: 10.1109/22.493919
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1.
T. Aigo, H. Yashiro, A. Jono, A. Tachikawa and A. Moritani, "Comparison of electronic characteristics and thermal resistance for HEMT's grown on GaAs and Si substrates", Electronics Lett., vol. 28, no. 18, pp. 1737-1738, Aug. 1992.
2.
K. Ohtsuka and H. Nakanishi, "Practical GaAs power SBD using GaAs/Si wafer", Proc. 19th Int. Symp. Gallium Arsenide and Related Compounds, pp. 881-886, Sept. 28̵Oct. 2 1992.
3.
T. Aigo, H. Yashiro, M. Goto, A. Jono, A. Tachikawa and A. Moritani, "Thermal resistance and electronic characteristics for high electron mobility transistors grown on Si and GaAs substrates by metal-organic chemical vapor deposition", Japanese J. Appl. Physics, vol. 32, no. 12A, pp. 5508-5513, Dec. 1993.
4.
R. J. Fischer, J. Klem, C.-K. Peng, J. S. Gedymin and H. Markoc¸, "Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates", IEEE Electron Device Lett., vol. EDL-7, no. 2, pp. 112-114, Feb. 1986.
5.
R. J. Fischer, N. Chand, W. F. Kopp, C.-K. Peng, H. Markoc¸, K. R. Gleason, et al., "A DC and microwave comparison of GaAs MESFET's on GaAs and Si substrates", IEEE Trans. Electron Devices, vol. ED-33, no. 2, pp. 206-213, Feb. 1986.
6.
R. J. Fischer, W. F. Kopp, J. S. Gedymin and H. Markoc¸, "Properties of MODFET's grown on Si substrates at DC and microwave frequencies", IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1407-1412, Oct. 1986.
7.
M. I. Aksun, H. Markoc¸, L. F. Lester, K. H. G. Duh, P. M. Smith, P. C. Chao, et al., "Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates", Appl. Physics Lett., vol. 49, no. 24, pp. 1654-1655, Dec. 1986.
8.
M. N. Charasse, B. Bartenlian, B. Ge´rard, J. P. Hirtz, M. Laviron, A. M. de Parscau, et al., "12 GHz high power GaAs/Si MESFET's", Japanese J. Appl. Physics, vol. 28, no. 11, pp. L1896-L1898, Nov. 1989.
9.
T. Aigo, M. Goto, A. Jono, A. Tachikawa and A. Moritani, " Evaluation of V th uniformities and f_T for HEMT/Si fabricated using GaAs/AlGaAs selective dry etching ", Proc. 20th Int. Symp. Gallium Arsenide and Related Compounds, pp. 87-92, Aug. 29̵Sept. 2 1993.
10.
T. Aigo, A. Jono, A. Tachikawa, R. Hiratsuka and A. Moritani, "High uniformity of threshold voltage for GaAs/AlGaAs high electron mobility transistors grown on a Si substrate", Appl. Physics Lett., vol. 64, no. 23, pp. 3127-3129, June 1994.
11.
H. Shichijo, J. W. Lee, W. V. McLevige and A. H. Taddiken, "GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate", Electron Device Lett., vol. EDL-8, no. 3, pp. 121-123, Mar. 1987.
12.
F. Ren, N. Chand, Y.-K. Chen, S. Pearton, D. M. Tennant and D. J. Resnick, "High-performance AlGaAs/GaAs SDHT's and ring oscillators grown by MBE on Si substrate", Electron Device Lett., vol. EDL-10, no. 12, pp. 559-561, Dec. 1989.
13.
M. Berroth and R. Bosch, "High-frequency equivalent circuit of GaAs FET's for large-signal applications", IEEE Trans. Microwave Theory Tech., vol. 39, no. 2, pp. 224-229, Feb. 1991.
14.
Microwave Integrated Circuits., pp. 244 and 267, 1991.
15.
M. Akiyama, A study in hetero-epitaxial growth of GaAs on Si substrates by metal-organic chemical vapor deposition, pp. 58-59, 1991.
16.
D. Costa, W. U. Liu and J. S. Harris, "Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit", IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 2018-2024, Sept. 1991.
17.
P. J. van Wijnen, H. R. Claessen and E. A. Wolsheimer, " A new straightforward calibration and correction procedure for `on wafer' high frequency S -parameter measurements (45MHzGHz) ", IEEE 1987 Bipolar Circuits Technol. Meet., pp. 70-73, 1987.
18.
G. Dambrine, A. Cappy, F. Heliodore and E. Playez, "A new method for determining the FET small-signal equivalent circuit", IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151-1159, July 1988.
19.
L. Yang and S. I. Long, "New method to measure the source and drain resistance of the GaAs MESFET", IEEE Electron Device Lett., vol. EDL-7, no. 2, pp. 75-77, Feb. 1986.
20.
K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts and M. M. Helix, "Source drain and gate series resistance and electron saturation velocity in ion-implanted GaAs FET's", IEEE Trans. Electron Devices, vol. ED-32, no. 5, pp. 987-992, May 1985.
21.
T. Aigo, M. Goto, Y. Ohta, A. Jono, A. Tachikawa and A. Moritani, "Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates", IEEE Trans. Electron Devices.
