Metadata
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 44, Issue: 5, May 1996)
DOI: 10.1109/22.493919
Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
P.M. White,R.M. Healy
A new pinched-off cold-FET method to extract parasitic capacitances of MESFETs and HEMTs
Yeong-Lin Lai,Kuo-Hua Hsu
An equivalent circuit with the physical structure of depletion region considered for determination the parasitic capacitances of MESFETs and HEMTs
Jong-Sik Lim,Byung-Sung Kim,Sangwook Nam
On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model
João L. Gomes,Filipe M. Barradas,Luís C. Nunes,José C. Pedro
A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits
Yeong-Lin Lai,Kuo-Hua Hsu
Nonlinearities in FET/HEMT microwave devices for circuit synthesis applications
D.G. Thomas,B. Huang,G.R. Branner
Dynamic Performance Analysis of p-GaN HEMTs With Floating Substrates by Substrate Capacitance Coupling Model
Wenyao Feng,Lingyan Shen,Xuetong Zhou,Yufei Tian,Hang Su,Yunheng Hu,Li Zheng,Xinhong Cheng
An approach to determining an equivalent circuit for HEMTs
K. Shirakawa,H. Oikawa,T. Shimura,T. Kawasaki,Y. Ohashi,T. Saito,Y. Daido
An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs
J.-L. Cazaux,G.-I. Ng,D. Pavlidis,H.-F. Chau
Quantum capacitance in scaled down III–V FETs
Donghyun Jin,Daehyun Kim,Taewoo Kim,Jesús A. del Alamo
