Abstract:
The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the ...Show MoreMetadata
Abstract:
The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of Rsand Rdover a relatively wide range of drain currents.
Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 2, February 1986)
