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High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m | IEEE Journals & Magazine | IEEE Xplore

High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m


Abstract:

The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained...Show More

First Page of the Article

Abstract:

The modulator has a large on/off ratio, a low driving voltage (4 V), and operates in the 1.55- mu m wavelength region. Small device capacitance (0.2 pF) has been obtained by using spin-coated polyimides under the bonding pads, and small stray capacitance (0.07 pF) and bonding wide inductance (0.3 nH) have been realized. The modulator requires the lowest power yet reported for a high-frequency-operation external modulator.<>
Published in: IEEE Photonics Technology Letters ( Volume: 1, Issue: 5, May 1989)
Page(s): 100 - 101
Date of Publication: 06 August 2002

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First Page of the Article

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K. Wakita, I. Kotaka, H. Asai, S. Nojima and O. Mikami, "High efficiency electroabsorption in quaternary InGaAlAs/InAlAs quantum well optical modulators", Electron. Lett., vol. 24, pp. 1324-1326, 1988.
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