Abstract:
For the formation of shallow p/sup +/-n source-drain junctions for submicrometer CMOS technologies without the undesired channeling effects associated with B/sup +/ or BF...Show MoreMetadata
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Abstract:
For the formation of shallow p/sup +/-n source-drain junctions for submicrometer CMOS technologies without the undesired channeling effects associated with B/sup +/ or BF/sub 2//sup +/ ion implantation, the surface region of the silicon wafer is preamorphized by a silicon or germanium implant. The parameters that allow accurate simulation of as-implanted boron profiles in the preamorphized silicon obtained by BF/sub 2//sup +/ implants are given. Parameters which allow simulation using either a Gaussian distribution function or a Pearson distribution function, the latter giving a slight improvement in accuracy, are provided. The energy range covered by these parameters is 15-80 keV, which results in as-implanted junction depths of 800-1800 AA.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 36, Issue: 1, January 1989)
DOI: 10.1109/16.21198
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