Abstract:
For the formation of shallow p/sup +/-n source-drain junctions for submicrometer CMOS technologies without the undesired channeling effects associated with B/sup +/ or BF...Show MoreMetadata
First Page of the Article
Abstract:
For the formation of shallow p/sup +/-n source-drain junctions for submicrometer CMOS technologies without the undesired channeling effects associated with B/sup +/ or BF/sub 2//sup +/ ion implantation, the surface region of the silicon wafer is preamorphized by a silicon or germanium implant. The parameters that allow accurate simulation of as-implanted boron profiles in the preamorphized silicon obtained by BF/sub 2//sup +/ implants are given. Parameters which allow simulation using either a Gaussian distribution function or a Pearson distribution function, the latter giving a slight improvement in accuracy, are provided. The energy range covered by these parameters is 15-80 keV, which results in as-implanted junction depths of 800-1800 AA.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 36, Issue: 1, January 1989)
DOI: 10.1109/16.21198
First Page of the Article
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Motorola, Inc., Austin, TX, USA
Charles Evans and Associates, Redwood, CA, USA
Motorola, Inc., Austin, TX, USA
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, University of Texas, Austin, Austin, TX, USA
Motorola, Inc., Austin, TX, USA
Charles Evans and Associates, Redwood, CA, USA
Motorola, Inc., Austin, TX, USA
