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Conferences >29th European Solid-State Dev...

RF modelling for 0.1um gate length MOSFETs

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First Page of the Article

Published in: 29th European Solid-State Device Research Conference

Date of Conference: 13-15 September 1999

Date Added to IEEE Xplore: 17 October 2005

Print ISBN:2-86332-245-1

Conference Location: Leuven, Belgium

First Page of the Article

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IEEE Keywords
- Radio frequency ,
- MOSFETs ,
- Roentgenium ,
- Capacitance ,
- Scattering parameters ,
- Equivalent circuits ,
- Equations ,
- Circuit simulation ,
- Noise figure ,
- Voltage
Index Terms

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

IEEE Keywords
- Radio frequency ,
- MOSFETs ,
- Roentgenium ,
- Capacitance ,
- Scattering parameters ,
- Equivalent circuits ,
- Equations ,
- Circuit simulation ,
- Noise figure ,
- Voltage
Index Terms

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