RF modelling for 0.1um gate length MOSFETs | IEEE Conference Publication | IEEE Xplore
Access provided by:

MIT Libraries

Sign Out
Access provided by:

MIT Libraries

Sign Out
ADVANCED SEARCH
Conferences >29th European Solid-State Dev...

RF modelling for 0.1um gate length MOSFETs

PDF
E. Morifuji; T. Ohguro; H. Kimijima; T. Yoshitomi; H.S. Momose; Y. Katsumata
All Authors

Metadata

First Page of the Article

Published in: 29th European Solid-State Device Research Conference
Date of Conference: 13-15 September 1999
Date Added to IEEE Xplore: 17 October 2005
Print ISBN:2-86332-245-1
Conference Location: Leuven, Belgium

First Page of the Article

Hide First Page Preview
Citations are not available for this document.

Cites in Papers - |

Cites in Papers - IEEE (1)

Select All
1.
Hiroshi Iwai, "Development of RFCMOS Technologies in the 1990s in Toshiba", 2023 IEEE 15th International Conference on ASIC (ASICON), pp.1-18, 2023.
Show Article
Google Scholar
Contact IEEE to Subscribe
More Like This
RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices

IEEE Electron Device Letters

Published: 2006

A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

Published: 2002

Show More

References

References is not available for this document.

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.