Abstract:
Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors...Show MoreMetadata
Abstract:
Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics.
Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 5, May 1986)
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Cites in Papers - |
Cites in Papers - IEEE (3)
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