Abstract:
Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors...Show MoreMetadata
Abstract:
Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics.
Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 5, May 1986)
Stanford University, Stanford, CA
Stanford Electronics Laboratories, University of Stanford, Stanford, CA, USA
Stanford Electronics Laboratories, University of Stanford, Stanford, CA, USA
Stanford University, Stanford, CA
Stanford Electronics Laboratories, University of Stanford, Stanford, CA, USA
Stanford Electronics Laboratories, University of Stanford, Stanford, CA, USA
