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IIB-5 ultrashallow p+-n junctions suitable for VLSI CMOS | IEEE Journals & Magazine | IEEE Xplore

IIB-5 ultrashallow p+-n junctions suitable for VLSI CMOS


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Published in: IEEE Transactions on Electron Devices ( Volume: 32, Issue: 11, November 1985)
Page(s): 2532 - 2533
Date of Publication: 30 November 1985

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1.
T. M. Liu and W. G. Oldham, "Channeling effect of low energy boron implant in (100) silicon", IEEE Electron Device Lett., vol. EDL-4, pp. 59-62, 1983.
2.
J. F. Ziegler and R. F. Lever, "Channeling of ions near the silicon <100> axis", Appl. Phys. Lett., vol. 46, no. 4, pp. 358-360, Mar. 1985.
3.
T. E. Seidel, "Rapid thermal annealing of BF [illegible text] implanted preamorphized silicon", IEEE Electron Device Lett., vol. EDL-4, pp. 353-355, 1983.
4.
R. Kalish, T. O. Sedgwich, S. Mader and S. Shatas, "Transient enhanced diffusion in arsenic-implanted short time annealed silicon", Appl. Phys. Lett., vol. 44, no. 1, pp. 107-110, Jan. 1984.
5.
V. H. Ozguz, J. J. Wortman, J. R. Hauser, L. Simpson, M. A. Littlejohn, W. K. Chu, et al., "Electrical properties of implanted and rapid thermal annealed shallow p+-n junctions", Appl. Phys. Lett., vol. 45, no. 11, pp. 1225-1226, Dec. 1984.
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