Loading [a11y]/accessibility-menu.js

Scheduled Maintenance on Monday 1/13/2025

Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.

- Donate
- Personal Sign In

ADVANCED SEARCH

Journals & Magazines >IEEE Transactions on Electron... >Volume: 32 Issue: 11

IIB-5 ultrashallow p⁺-n junctions suitable for VLSI CMOS

Download PDF
Download References
Request Permissions
Save to
Alerts

Metadata

First Page of the Article

Published in: IEEE Transactions on Electron Devices ( Volume: 32, Issue: 11, November 1985)

Page(s): 2532 - 2533

Date of Publication: 30 November 1985

ISSN Information:

DOI: 10.1109/T-ED.1985.22319

First Page of the Article

Hide First Page Preview

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

Index Terms
- Heat Treatment ,
- Ionizing Radiation ,
- Sidewall ,
- Far-field ,
- Phased Array ,
- Shallow Depth ,
- Beampattern ,
- Diffraction Limit ,
- Sheet Resistance ,
- Defect Density ,
- Lateral Diffusion ,
- Rapid Thermal Annealing ,
- Residual Defects

Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.

Index Terms
- Heat Treatment ,
- Ionizing Radiation ,
- Sidewall ,
- Far-field ,
- Phased Array ,
- Shallow Depth ,
- Beampattern ,
- Diffraction Limit ,
- Sheet Resistance ,
- Defect Density ,
- Lateral Diffusion ,
- Rapid Thermal Annealing ,
- Residual Defects

References is not available for this document.