Abstract:
This paper examines the high-frequency behavior of the enhancement-mode pseudomorphic high electron-mobility transistor (epHEMT) gate. During this study, no bias was appl...Show MoreMetadata
Abstract:
This paper examines the high-frequency behavior of the enhancement-mode pseudomorphic high electron-mobility transistor (epHEMT) gate. During this study, no bias was applied between the drain and source. Rather, the gate was forward biased with either the drain, source, or channel (drain and source connected together) grounded. While applying positive voltage V/sub g/ to the gate, one-port S-parameters were measured from 0.1 to 10 GHz and then converted to Z-parameters. Plotting the real part R of the impedance reveals two sharp peaks. The first peak occurs near the device threshold voltage for conduction in the InGaAs well. A second peak occurs at higher voltages where conduction begins to occur in the surface AlGaAs layer. An equivalent-circuit model is proposed to account for the epHEMT gate's high-frequency behavior and the proposed model is shown to be in good agreement with the experimental data.
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 51, Issue: 6, June 2003)
RF Micro Devices, Inc., Greensboro, NC, USA
Scott A. Wartenberg (S'94–M'97–SM'01) was born in Memphis, TN in 1963. He received the B. S. E. E. degree (with honors) from the University of Tennessee, Knoxville, in 1986, and the M. S. and Ph. D. degrees in electrical engineering from The Johns Hopkins University, Baltimore, MD, in 1991 and 1997, respectively.
He has performed antenna and microwave multichip module (MCM) design for the Department of Defense, Raytheon Sy...Show More
Scott A. Wartenberg (S'94–M'97–SM'01) was born in Memphis, TN in 1963. He received the B. S. E. E. degree (with honors) from the University of Tennessee, Knoxville, in 1986, and the M. S. and Ph. D. degrees in electrical engineering from The Johns Hopkins University, Baltimore, MD, in 1991 and 1997, respectively.
He has performed antenna and microwave multichip module (MCM) design for the Department of Defense, Raytheon Sy...View more
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
John R. Hauser (S'59–M'60–SM'78–F'87) received the B. S. degree in electrical engineering from North Carolina State University, Raleigh, in 1960, and the M. S. and Ph. D. degrees from Duke University, Durham, NC, in 1962 and 1964, respectively.
In 1960 and 1961, he was with Bell Laboratories, Winston-Salem, NC. In 1962, he joined the Research Triangle Institute, where he performed research on semiconductor and microelectro...Show More
John R. Hauser (S'59–M'60–SM'78–F'87) received the B. S. degree in electrical engineering from North Carolina State University, Raleigh, in 1960, and the M. S. and Ph. D. degrees from Duke University, Durham, NC, in 1962 and 1964, respectively.
In 1960 and 1961, he was with Bell Laboratories, Winston-Salem, NC. In 1962, he joined the Research Triangle Institute, where he performed research on semiconductor and microelectro...View more
Contents RF Micro Devices, Inc., Greensboro, NC, USA
Scott A. Wartenberg (S'94–M'97–SM'01) was born in Memphis, TN in 1963. He received the B. S. E. E. degree (with honors) from the University of Tennessee, Knoxville, in 1986, and the M. S. and Ph. D. degrees in electrical engineering from The Johns Hopkins University, Baltimore, MD, in 1991 and 1997, respectively.
He has performed antenna and microwave multichip module (MCM) design for the Department of Defense, Raytheon Systems, Westinghouse, and, more recently, with the Semiconductor Products Group, Agilent Technologies, Newark, CA. As a Test Engineer with Agilent Technologies, he developed new high-volume RF on-wafer test methods for p-i-n diodes, Schottky diodes, and film bulk acoustic resonator (FBAR) filters. He is currently a Staff Engineer with RF Micro Devices, Greensboro, NC. His responsibilities include semiconductor device modeling and RF measurement techniques for high-volume production. He authored RF Measurements of Die and Packages (Boston, MA: Artech House, 2002).
Scott A. Wartenberg (S'94–M'97–SM'01) was born in Memphis, TN in 1963. He received the B. S. E. E. degree (with honors) from the University of Tennessee, Knoxville, in 1986, and the M. S. and Ph. D. degrees in electrical engineering from The Johns Hopkins University, Baltimore, MD, in 1991 and 1997, respectively.
He has performed antenna and microwave multichip module (MCM) design for the Department of Defense, Raytheon Systems, Westinghouse, and, more recently, with the Semiconductor Products Group, Agilent Technologies, Newark, CA. As a Test Engineer with Agilent Technologies, he developed new high-volume RF on-wafer test methods for p-i-n diodes, Schottky diodes, and film bulk acoustic resonator (FBAR) filters. He is currently a Staff Engineer with RF Micro Devices, Greensboro, NC. His responsibilities include semiconductor device modeling and RF measurement techniques for high-volume production. He authored RF Measurements of Die and Packages (Boston, MA: Artech House, 2002).View more
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
John R. Hauser (S'59–M'60–SM'78–F'87) received the B. S. degree in electrical engineering from North Carolina State University, Raleigh, in 1960, and the M. S. and Ph. D. degrees from Duke University, Durham, NC, in 1962 and 1964, respectively.
In 1960 and 1961, he was with Bell Laboratories, Winston-Salem, NC. In 1962, he joined the Research Triangle Institute, where he performed research on semiconductor and microelectronic devices. In 1966, he joined the faculty at North Carolina State University. He is a faculty member of the Electrical and Computer Engineering Department, North Carolina State University, where he currently serves as Interim Department Head. He has authored or coauthored over 150 technical papers in the area of microelectronic materials and devices. He has served as Director of the Advanced Electronic Materials Processing Center and the SRC/SEMATECH Front End Processes Center, North Carolina State University. His current research interests are in the areas of microelectronics and semiconductor devices.
Dr. Hauser is a member of the American Physical Society.
John R. Hauser (S'59–M'60–SM'78–F'87) received the B. S. degree in electrical engineering from North Carolina State University, Raleigh, in 1960, and the M. S. and Ph. D. degrees from Duke University, Durham, NC, in 1962 and 1964, respectively.
In 1960 and 1961, he was with Bell Laboratories, Winston-Salem, NC. In 1962, he joined the Research Triangle Institute, where he performed research on semiconductor and microelectronic devices. In 1966, he joined the faculty at North Carolina State University. He is a faculty member of the Electrical and Computer Engineering Department, North Carolina State University, where he currently serves as Interim Department Head. He has authored or coauthored over 150 technical papers in the area of microelectronic materials and devices. He has served as Director of the Advanced Electronic Materials Processing Center and the SRC/SEMATECH Front End Processes Center, North Carolina State University. His current research interests are in the areas of microelectronics and semiconductor devices.
Dr. Hauser is a member of the American Physical Society.View more
