Loading [MathJax]/extensions/MathMenu.js

Scott Wartenberg - IEEE Xplore Author Profile

Scheduled Maintenance on Monday 1/13/2025

Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.

IEEE.org
IEEE Xplore
IEEE SA
IEEE Spectrum
More Sites

- Donate
- Personal Sign In

Institutional Sign In

Institutional Sign In

ADVANCED SEARCH

Author details

Scott Wartenberg

Also published under: S. A. Wartenberg, Scott A. Wartenberg, S. Wartenberg

Publications

13

Citations

442

Publications by Year

19992017

Co-Authors:

P. D. BradleySaverio FazzariJ. R. HauserJ. D. LarsonQing Hou Liu

Show All Co-Authors (11)

Scott Wartenberg

Also published under: S. A. Wartenberg, Scott A. Wartenberg, S. Wartenberg

Affiliation

Booz Allen Hamilton, Atlanta, GA

Publication Topics

Rate Of Return,
Supply Chain,
Actual Decision,
Advertising,
Analysis Techniques,
Assessment Methods,
Benefits Of Testing,
Bidding,
Circuit Board,
Control Construct,
Cost Of Testing,
Critical Part

Biography

Scott Wartenberg, Ph.D., received a Ph.D. in Electrical Engineering from Johns Hopkins University and supports a variety of DoD clients in semiconductor design, strategic assessments, and development of advanced technologies and verification techniques.(Based on document published on 8 June 2017).

Publications

13

Citations

442

Publications by Year

19992017

Co-Authors:

P. D. Bradley
Saverio Fazzari
J. R. Hauser
J. D. Larson
Qing Hou Liu

Show All Co-Authors (11)

Author's Published Works

Search History

Showing 1-13 of 13 results

Journals (9)

Conferences (3)

Magazines (1)

Sort

Filter Results

Show

Open Access Only

Range
Single Year
S.A. Wartenberg(8)
Scott Wartenberg(3)
Doug Palmer(2)
Saverio Fazzari(2)
J.R. Hauser(2)
RF Micro Devices, Inc., Greensboro, NC, USA(4)
Booz Allen and Hamilton, Inc., Arlington, VA, USA(3)
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA(2)
Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA(2)
Hewlett Packard Company, Newark, CA, USA(2)
IEEE Transactions on Microwave Theory and Techniques(5)
IEEE Transactions on Electron Devices(2)
2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)(1)
2016 International Great Lakes Symposium on VLSI (GLSVLSI)(1)
2017 IEEE Aerospace Conference(1)
IEEE(13)
Big Sky, MT, USA(1)
Boston, MA, USA(1)
San Juan, PR, USA(1)
Impedance(5)
Advanced Design System(4)
Equivalent Circuit(3)
Forward Bias(3)
Ground Plane(3)

Select All on Page

Sort By

Results

A virtual laboratory approach for risk assessment of aerospace electronics trust techniques

Doug Palmer;Saverio Fazzari;Scott Wartenberg

2017 IEEE Aerospace Conference

Year: 2017 | Conference Paper |

HTML

This paper describes a novel aerospace electronic component risk assessment methodology and supporting virtual laboratory structure designed to augment existing supply chain management practices and aid in Microelectronics Trust Assurance. This toolkit and methodology applies structure to the unclear and evolving risk assessment problem, allowing quantification of key risks affecting both advanced...Show More

A virtual laboratory approach for risk assessment of aerospace electronics trust techniques

Doug Palmer;Saverio Fazzari;Scott Wartenberg

2017 IEEE Aerospace Conference

Year: 2017 | Conference Paper |

Defense systems and IoT: Security issues in an era of distributed command and control

Doug Palmer;Saverio Fazzari;Scott Wartenberg

2016 International Great Lakes Symposium on VLSI (GLSVLSI)

Year: 2016 | Conference Paper |

Cited by: Papers (2)

HTML

Just as the Internet of Things (IoT) stands to revolutionize the way we sense, analyze, and apply data in civilian life, defense systems are also working to enhance future mission capabilities with IoT logic and devices. Recently, Gen. James Cartwright, former vice chairman of the Joint Chiefs of Staff, stated: "The ability to move from number of men per machine to the number of machines per man i...Show More

Defense systems and IoT: Security issues in an era of distributed command and control

Doug Palmer;Saverio Fazzari;Scott Wartenberg

2016 International Great Lakes Symposium on VLSI (GLSVLSI)

Year: 2016 | Conference Paper |

Electrical and Thermal Cosimulation of GaAs Interconnects

Scott A. Wartenberg;Gang Zhao;Qing Hou Liu

IEEE Transactions on Advanced Packaging

Year: 2007 | Volume: 30, Issue: 4 | Journal Article |

HTML

It is well known that the poor thermal conductivity of GaAs adversely affects the electrical performance of GaAs circuits. Although they interact, the electrical and thermal circuits are simulated using separate software simulation packages. If the circuits are cosimulated on the same package, then the electrical and thermal circuits can interactively determine accurate information for the tempera...Show More

Electrical and Thermal Cosimulation of GaAs Interconnects

Scott A. Wartenberg;Gang Zhao;Qing Hou Liu

IEEE Transactions on Advanced Packaging

Year: 2007 | Volume: 30, Issue: 4 | Journal Article |

Six-gigahertz equivalent circuit model of an RF membrane probe card

S.A. Wartenberg

IEEE Transactions on Instrumentation and Measurement

Year: 2006 | Volume: 55, Issue: 3 | Journal Article |

Cited by: Papers (6)

HTML

Installed on manufacturing probe stations, the membrane probe card is a production test board for high-volume radio frequency (RF) wafer testing. Replacing dc needle probes with an RF membrane probe permits RF measurements at the die level. Both physically and electrically, the membrane probe resembles the components and packaging of the final product. Die tested using a properly designed membrane...Show More

Six-gigahertz equivalent circuit model of an RF membrane probe card

S.A. Wartenberg

IEEE Transactions on Instrumentation and Measurement

Year: 2006 | Volume: 55, Issue: 3 | Journal Article |

Substrate voltage and accumulation-mode MOS varactor capacitance

S.A. Wartenberg;J.R. Hauser

IEEE Transactions on Electron Devices

Year: 2005 | Volume: 52, Issue: 7 | Journal Article |

Cited by: Papers (10) | Patents (2)

HTML

To adjust the capacitance of an accumulation-mode MOS varactor, a voltage is applied to the drain/source with the gate grounded. In this novel arrangement, a voltage is applied to the gate V/sub gate/ and another to the substrate V/sub sub/ with the drain/source grounded. Applying V/sub sub/ between the p/sup +/-type substrate and the varactor's n-well adjusts the minimum capacitance C/sub min/ an...Show More

Substrate voltage and accumulation-mode MOS varactor capacitance

S.A. Wartenberg;J.R. Hauser

IEEE Transactions on Electron Devices

Year: 2005 | Volume: 52, Issue: 7 | Journal Article |

A coaxial-to-microstrip transition for multilayer substrates

S.A. Wartenberg;Qing Huo Liu

IEEE Transactions on Microwave Theory and Techniques

Year: 2004 | Volume: 52, Issue: 2 | Journal Article |

Cited by: Papers (24) | Patents (11)

HTML

Described is a right-angle coaxial-to-microstrip transition suitable for multilayer substrates. Electrically, it transforms the transmission mode from coaxial (TEM) to microstrip (quasi-TEM). Physically, this transformation occurs in two ways. First, strips of the ground plane are incrementally removed from each metal layer. At the same time, the coaxial line is gradually shifted off-center (i.e.,...Show More

A coaxial-to-microstrip transition for multilayer substrates

S.A. Wartenberg;Qing Huo Liu

IEEE Transactions on Microwave Theory and Techniques

Year: 2004 | Volume: 52, Issue: 2 | Journal Article |

The epHEMT gate at microwave frequencies

S.A. Wartenberg;J.R. Hauser

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 6 | Journal Article |

HTML

This paper examines the high-frequency behavior of the enhancement-mode pseudomorphic high electron-mobility transistor (epHEMT) gate. During this study, no bias was applied between the drain and source. Rather, the gate was forward biased with either the drain, source, or channel (drain and source connected together) grounded. While applying positive voltage V/sub g/ to the gate, one-port S-param...Show More

The epHEMT gate at microwave frequencies

S.A. Wartenberg;J.R. Hauser

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 6 | Journal Article |

Selected topics in RF coplanar probing

S.A. Wartenberg

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 4 | Journal Article |

Cited by: Papers (37)

HTML

The RF coplanar probe is a popular tool for launching high-frequency signals onto and off of a wafer. Physically contacting the die, it establishes a crucial link between the test system and wafer. Their proper use permits a higher degree of measurement accuracy compared to test fixturing. To augment the reader's understanding, this tutorial reviews selected issues related to the design, construct...Show More

Selected topics in RF coplanar probing

S.A. Wartenberg

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 4 | Journal Article |

Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system

J.D. Larson;P.D. Bradley;S. Wartenberg;R.C. Ruby

2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)

Year: 2000 | Conference Paper |

Cited by: Papers (361) | Patents (4)

Microwave Film Bulk Acoustic Resonators (FBARs) may be characterized by means of the Mason transmission line model, but for parameter extraction and design studies, the lumped Butterworth-Van Dyke (BVD) model is more useful. We propose a modification to the standard five element BVD model, in which a second resistor is added in series with the plate capacitance C/sub 0/. This improves the model pr...Show More

Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system

J.D. Larson;P.D. Bradley;S. Wartenberg;R.C. Ruby

2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)

Year: 2000 | Volume: 1 | Conference Paper |

Tunable microwave coupler buried in low-temperature co-fired ceramic

S.A. Wartenberg

IEEE Transactions on Microwave Theory and Techniques

Year: 2000 | Volume: 48, Issue: 4 | Journal Article |

Cited by: Papers (1)

This paper outlines a method of tuning a microwave broadside coupler buried in low-temperature co-fired ceramic. Etching a slot in the exposed ground plane tunes the characteristic impedance Z/sub 0/ of a stripline coupler. An iterative method computes the correct dimensions of the slot. Applying the method salvages microwave circuits detuned due to manufacturing tolerances.Show More

Tunable microwave coupler buried in low-temperature co-fired ceramic

S.A. Wartenberg

IEEE Transactions on Microwave Theory and Techniques

Year: 2000 | Volume: 48, Issue: 4 | Journal Article |

Pulsed microwave characterization of an SiGe heterojunction bipolar transistor

S.A. Wartenberg;C.R. Westgate

IEEE Transactions on Microwave Theory and Techniques

Year: 1999 | Volume: 47, Issue: 4 | Journal Article |

This paper presents the first pulsed characterization of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT). Comparison is made of the SiGe HBT's performance to that of a Si bipolar junction transistor fabricated using the same mask set. Measurements made over a 400-/spl mu/s pulse show how device self-heating dramatically affects the microwave-frequency response of the devices. Us...Show More

Pulsed microwave characterization of an SiGe heterojunction bipolar transistor

S.A. Wartenberg;C.R. Westgate

IEEE Transactions on Microwave Theory and Techniques

Year: 1999 | Volume: 47, Issue: 4 | Journal Article |

Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

S.A. Wartenberg;C.R. Westgate

IEEE Transactions on Electron Devices

Year: 1999 | Volume: 46, Issue: 6 | Journal Article |

Cited by: Papers (1)

This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT. The expression includes two fit factors, one for the Si/sub 1...Show More

Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

S.A. Wartenberg;C.R. Westgate

IEEE Transactions on Electron Devices

Year: 1999 | Volume: 46, Issue: 6 | Journal Article |

Member benefits: International Microwave Symposium Workshops

Scott Wartenberg;Charles Wilker

IEEE Microwave Magazine

Year: 2008 | Volume: 9, Issue: 3 | Magazine Article |

Member benefits: International Microwave Symposium Workshops

Scott Wartenberg;Charles Wilker

IEEE Microwave Magazine

Year: 2008 | Volume: 9, Issue: 3 | Magazine Article |

IEEE Personal Account

Change username/password

Purchase Details

Payment Options
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

Follow

About IEEE Xplore | Contact Us | Help | Accessibility | Terms of Use | Nondiscrimination Policy | IEEE Ethics Reporting | Sitemap | IEEE Privacy Policy

A public charity, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.

© Copyright 2025 IEEE - All rights reserved, including rights for text and data mining and training of artificial intelligence and similar technologies.

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

About IEEE Xplore
Contact Us
Help
Accessibility
Terms of Use
Nondiscrimination Policy
Sitemap
Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Test Whats new message.