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Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security | IEEE Journals & Magazine | IEEE Xplore

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security


Abstract:

Physically unclonable function (PUF) is a lightweight encryption technique that generates random digital keys (responses) using intrinsic process variations of devices, w...Show More

Abstract:

Physically unclonable function (PUF) is a lightweight encryption technique that generates random digital keys (responses) using intrinsic process variations of devices, which is a promising solution for Internet of Things (IoT) security due to its compatibility with constrained resources. Recent attempts to adopt nonvolatile memory (NVM) into PUFs have enhanced stability through a write-back technique that maintains consistent responses from the enrollment phase even under wide environmental variations by storing the response in the NVM device. However, the stability of the previous NVM PUFs is limited by the low-on/off ratio of the NVMs. In addition, the circuit required to implement the write-back technique poses challenges of increased area and energy consumption. Considering the hardware limitations and power constraints of IoT devices, this article proposes a ferroelectric field-effect transistor (FeFET) PUF as a suitable security solution. The high-on/off ratio of FeFET and the proposed auto write-back technique that does not require additional circuitry realize the stability improvement (a bit error rate of <0.0001%) under wide environmental variations without incurring area and energy overheads. The negligible off current of FeFET prevents static power consumption, which leads to the lowest energy consumption of 6.70e ^{-}15 J during the response generation of the FeFET PUF. In addition, the compact PUF cell composed of two FeFETs achieves a high density of 87.37~F {^{{2}}} .
Published in: IEEE Internet of Things Journal ( Volume: 11, Issue: 16, 15 August 2024)
Page(s): 27676 - 27686
Date of Publication: 10 May 2024

ISSN Information:

Funding Agency:

Author image of Sehee Lim
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Sehee Lim was born in Seoul, South Korea, in 1994. She received the B.S. degree in systems biology and electrical and electric engineering from Yonsei University, Seoul, in 2018, where she is currently pursuing the Ph.D. degree.
Her current research interests include physically unclonable function design and ferroelectric FET-based logic IP design.
Sehee Lim was born in Seoul, South Korea, in 1994. She received the B.S. degree in systems biology and electrical and electric engineering from Yonsei University, Seoul, in 2018, where she is currently pursuing the Ph.D. degree.
Her current research interests include physically unclonable function design and ferroelectric FET-based logic IP design.View more
Author image of Junghyeon Hwang
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
Junghyeon Hwang (Graduate Student Member, IEEE) received the B.S. degree from Sogang University, Seoul, South Korea, in 2019. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea.
His research interests include ferroelectric devices, logic in memory, and computing in memory.
Junghyeon Hwang (Graduate Student Member, IEEE) received the B.S. degree from Sogang University, Seoul, South Korea, in 2019. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea.
His research interests include ferroelectric devices, logic in memory, and computing in memory.View more
Author image of Dong Han Ko
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Dong Han Ko was born in Seoul, South Korea, in 1995. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.
Dong Han Ko was born in Seoul, South Korea, in 1995. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.View more
Author image of Se Keon Kim
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Se Keon Kim was born in Seoul, South Korea, in 1996. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.
Se Keon Kim was born in Seoul, South Korea, in 1996. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.View more
Author image of Tae Woo Oh
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
Tae Woo Oh was born in Seoul, South Korea, in 1992. He received the B.S. and Ph.D. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2017 and 2023, respectively.
His research interests include ferroelectric FET based non-volatile circuit, next-generation semiconductor devices, and low-power and high-speed SRAM.
Tae Woo Oh was born in Seoul, South Korea, in 1992. He received the B.S. and Ph.D. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2017 and 2023, respectively.
His research interests include ferroelectric FET based non-volatile circuit, next-generation semiconductor devices, and low-power and high-speed SRAM.View more
Author image of Sanghun Jeon
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
Sanghun Jeon (Senior Member, IEEE) received the Ph.D degree in electronic materials program from Gwangju Institute of Science and Technology, Gwangju, South Korea, in 2003
He is a Professor with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea. After working with Samsung Electronics, Suwon, South Korea, and Samsung Advanced Institute of Technology, Suwon...Show More
Sanghun Jeon (Senior Member, IEEE) received the Ph.D degree in electronic materials program from Gwangju Institute of Science and Technology, Gwangju, South Korea, in 2003
He is a Professor with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea. After working with Samsung Electronics, Suwon, South Korea, and Samsung Advanced Institute of Technology, Suwon...View more
Author image of Seong-Ook Jung
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Articron Inc, Seoul, South Korea
Seong-Ook Jung (Senior Member, IEEE) received the B.S. and M.S. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 1987 and 1989, respectively, and the Ph.D. degree in electrical engineering from the University of Illinois at Urbana-Champaign, Urbana, IL, USA, in 2002.
From 1989 to 1998, he was affiliated with Samsung Electronics Company, Ltd., Hwasung, South Korea, where he was...Show More
Seong-Ook Jung (Senior Member, IEEE) received the B.S. and M.S. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 1987 and 1989, respectively, and the Ph.D. degree in electrical engineering from the University of Illinois at Urbana-Champaign, Urbana, IL, USA, in 2002.
From 1989 to 1998, he was affiliated with Samsung Electronics Company, Ltd., Hwasung, South Korea, where he was...View more

I. Introduction

As the exchange of personal information among Internet of Things (IoT) devices increases, the security of encryption keys has become necessary [1]. Since conventional encryption techniques using random number generators and nonvolatile memory (NVM) entail serious encryption leakage risks [2], the physically unclonable function (PUF) has been developed to enable a higher level of security and cost-effectiveness [3]. As the PUF is a hardware-based encryption technique that does not share resources for processing encryption keys, the encryption keys generated from the PUF can be secured more safely than software-based encryption techniques that share the resources in public. In addition, the PUF is a promising security solution for IoT devices where hardware resources are constrained due to its lightweight characteristics [4], [5].

Author image of Sehee Lim
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Sehee Lim was born in Seoul, South Korea, in 1994. She received the B.S. degree in systems biology and electrical and electric engineering from Yonsei University, Seoul, in 2018, where she is currently pursuing the Ph.D. degree.
Her current research interests include physically unclonable function design and ferroelectric FET-based logic IP design.
Sehee Lim was born in Seoul, South Korea, in 1994. She received the B.S. degree in systems biology and electrical and electric engineering from Yonsei University, Seoul, in 2018, where she is currently pursuing the Ph.D. degree.
Her current research interests include physically unclonable function design and ferroelectric FET-based logic IP design.View more
Author image of Junghyeon Hwang
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
Junghyeon Hwang (Graduate Student Member, IEEE) received the B.S. degree from Sogang University, Seoul, South Korea, in 2019. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea.
His research interests include ferroelectric devices, logic in memory, and computing in memory.
Junghyeon Hwang (Graduate Student Member, IEEE) received the B.S. degree from Sogang University, Seoul, South Korea, in 2019. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea.
His research interests include ferroelectric devices, logic in memory, and computing in memory.View more
Author image of Dong Han Ko
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Dong Han Ko was born in Seoul, South Korea, in 1995. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.
Dong Han Ko was born in Seoul, South Korea, in 1995. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.View more
Author image of Se Keon Kim
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Se Keon Kim was born in Seoul, South Korea, in 1996. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.
Se Keon Kim was born in Seoul, South Korea, in 1996. He is currently pursuing the B.S. degree in electrical and electronic engineering with Yonsei University, Seoul.
His current research interests include ferroelectric FET-based nonvolatile circuit design.View more
Author image of Tae Woo Oh
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
Tae Woo Oh was born in Seoul, South Korea, in 1992. He received the B.S. and Ph.D. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2017 and 2023, respectively.
His research interests include ferroelectric FET based non-volatile circuit, next-generation semiconductor devices, and low-power and high-speed SRAM.
Tae Woo Oh was born in Seoul, South Korea, in 1992. He received the B.S. and Ph.D. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2017 and 2023, respectively.
His research interests include ferroelectric FET based non-volatile circuit, next-generation semiconductor devices, and low-power and high-speed SRAM.View more
Author image of Sanghun Jeon
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
Sanghun Jeon (Senior Member, IEEE) received the Ph.D degree in electronic materials program from Gwangju Institute of Science and Technology, Gwangju, South Korea, in 2003
He is a Professor with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea. After working with Samsung Electronics, Suwon, South Korea, and Samsung Advanced Institute of Technology, Suwon, for 10 years and being appointed as a Faculty Member with Korea University, Seoul, South Korea, in 2013, he established an ANTONIS Lab, KAIST in 2018. His current research interests include hafnia ferroelectric devices, processing in memory, electronic skin, logic-in memory devices, and stretchable displays.
He received the Best Ph.D. Paper Award and the Young Researcher Award SSDM in 2003.
Sanghun Jeon (Senior Member, IEEE) received the Ph.D degree in electronic materials program from Gwangju Institute of Science and Technology, Gwangju, South Korea, in 2003
He is a Professor with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea. After working with Samsung Electronics, Suwon, South Korea, and Samsung Advanced Institute of Technology, Suwon, for 10 years and being appointed as a Faculty Member with Korea University, Seoul, South Korea, in 2013, he established an ANTONIS Lab, KAIST in 2018. His current research interests include hafnia ferroelectric devices, processing in memory, electronic skin, logic-in memory devices, and stretchable displays.
He received the Best Ph.D. Paper Award and the Young Researcher Award SSDM in 2003.View more
Author image of Seong-Ook Jung
School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Articron Inc, Seoul, South Korea
Seong-Ook Jung (Senior Member, IEEE) received the B.S. and M.S. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 1987 and 1989, respectively, and the Ph.D. degree in electrical engineering from the University of Illinois at Urbana-Champaign, Urbana, IL, USA, in 2002.
From 1989 to 1998, he was affiliated with Samsung Electronics Company, Ltd., Hwasung, South Korea, where he was involved in specialty memories, such as video, graphics, window RAM, and merged memory logic. From 2001 to 2003, he was affiliated with T-RAM Inc., Mountain View, CA, USA, where he was the Leader of the Thyristor-Based Memory Circuit Design Team. From 2003 to 2006, he was affiliated with Qualcomm Inc., San Diego, CA, USA, where he focused on high-performance low-power embedded memories, process variation-tolerant circuit design, and low-power circuit techniques. Since 2006, he has been a Professor with Yonsei University, Seoul. Also, he is a CTO in Articron Inc., Seoul. His current research interests include process variation-tolerant, low-power, and mixed-mode circuit design, as well as next-generation memory and technology.
Seong-Ook Jung (Senior Member, IEEE) received the B.S. and M.S. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 1987 and 1989, respectively, and the Ph.D. degree in electrical engineering from the University of Illinois at Urbana-Champaign, Urbana, IL, USA, in 2002.
From 1989 to 1998, he was affiliated with Samsung Electronics Company, Ltd., Hwasung, South Korea, where he was involved in specialty memories, such as video, graphics, window RAM, and merged memory logic. From 2001 to 2003, he was affiliated with T-RAM Inc., Mountain View, CA, USA, where he was the Leader of the Thyristor-Based Memory Circuit Design Team. From 2003 to 2006, he was affiliated with Qualcomm Inc., San Diego, CA, USA, where he focused on high-performance low-power embedded memories, process variation-tolerant circuit design, and low-power circuit techniques. Since 2006, he has been a Professor with Yonsei University, Seoul. Also, he is a CTO in Articron Inc., Seoul. His current research interests include process variation-tolerant, low-power, and mixed-mode circuit design, as well as next-generation memory and technology.View more
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