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T. Warabino - IEEE Xplore Author Profile

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Author details

T. Warabino

Publications

3

Citations

97

Publications by Year

20062006

Co-Authors:

T. EzakiT. IizukaR. InagakiS. KumashiroH. J. Mattausch

Show All Co-Authors (15)

T. Warabino

Affiliation

Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan

Publication Topics

Circuit Simulation,
Gate Length,
Thermal Noise,
Additional Model Parameters,
Bessel Function,
Capacitive Coupling,
Carrier Concentration,
Channel Conductance,
Mobility Distribution,
Noise Model,
Radio Frequency Devices,
Surface Potential

Biography

Tomoyuki Warabino received the B.S. degree in electrical engineering from Hiroshima University, Hiroshima, Japan, in 2005. He is currently working toward the M.S. degree at the Graduate School of Advanced Sciences of Matter. Hiroshima University.,His research interests include the characterization of MOSFET high-frequency noise for RF circuit simulation.(Based on document published on 21 August 2006).

Publications

3

Citations

97

Publications by Year

20062006

Co-Authors:

T. Ezaki
T. Iizuka
R. Inagaki
S. Kumashiro
H. J. Mattausch

Show All Co-Authors (15)

Author's Published Works

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Showing 1-3 of 3 results

Conferences (2)

Journals (1)

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Single Year
T. Ohguro(3)
M. Miyake(3)
M. Taguchi(3)
T. Warabino(3)
S. Miyamoto(3)
Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan(2)
Semiconductor Technology Academic Research Center, Kanagawa, Japan(2)
Sanyo Electric Corporation Limited, Osaka, Japan(1)
Graduate School of Advanced Sciences of Matter, Hiroshima University, Hiroshima, Japan(1)
Semiconductor Technology Academic Research Center, Yokohama, Kanagawa, Japan(1)
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings(1)
2006 International Conference on Simulation of Semiconductor Processes and Devices(1)
IEEE Transactions on Electron Devices(1)
IEEE(3)
Monterey, CA, USA(1)
Shanghai, China(1)
Circuit Simulation(3)
Gate Length(3)
Thermal Noise(3)
Additional Model Parameters(2)
Bessel Function(2)

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Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

T. Ezaki;T. Warabino;M. Miyake;N. Sadachika;D. Navarro;H. J. Mattausch;M. Miura-Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Year: 2006 | Conference Paper |

Cited by: Papers (1)

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We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surfac...Show More

Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

T. Ezaki;T. Warabino;M. Miyake;N. Sadachika;D. Navarro;H. J. Mattausch;M. Miura-Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Year: 2006 | Conference Paper |

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 International Conference on Simulation of Semiconductor Processes and Devices

Year: 2006 | Conference Paper |

Cited by: Papers (4)

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We have developed a high-frequency noise model for short channel MOSFETs by considering the position dependent surface potential which results in a non-uniform mobility distribution along the channel. The chosen approach successfully reproduces the induced-gate noise and the cross-correlation noise between drain and gate for short channel MOSFETs without additional model parameters. In particular,...Show More

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 International Conference on Simulation of Semiconductor Processes and Devices

Year: 2006 | Conference Paper |

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 9 | Journal Article |

Cited by: Papers (92) | Patents (3)

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The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximation...Show More

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 9 | Journal Article |

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