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Gaku Suzuki - IEEE Xplore Author Profile
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Gaku Suzuki

Also published under: G. Suzuki

Publications
5
Citations
104
Publications by Year
20052019
Co-Authors:
Show All Co-Authors (20)
Image of author Gaku Suzuki

Gaku Suzuki

Also published under: G. Suzuki

Affiliation

Advacned Sciences of Mattaer
Hiroshima University
Higashi-Hiroshima, Japan

Publication Topics

Biography

Gaku Suzuki received the B.S. and M.S. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 2004 and 2006, respectively. His graduate thesis was in the experimental and theoretical characterization of photonic response of p-i-n photodiode.,He is currently with Matsushita Electric Industrial Corporation, Kyoto, Japan.(Based on document published on 21 August 2006).
Publications
5
Citations
104
Publications by Year
20052019
Co-Authors:
Show All Co-Authors (20)
Author's Published Works

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Modeling of Photocurrent Response for Integrated Optoelectric Circuit Simulation

Yasuhiro Shintaku;Shota Kusu;Teppei Miyoshi;Gaku Suzuki;Kohkichi Konno;Mitiko Miura-Mattausch

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)
Year: 2019 | Conference Paper |
The photodiode model HiSIM-PD has been developed for circuit integration by considering the dynamic carrier generation mechanism explicitly. To predict transient photocurrent characteristics accurately for any device structure as well as any bias condition different electric field distributions in the device causing different carrier transit dynamics are distinguished. It is verified that the exte...Show More

Modeling of Photocurrent Response for Integrated Optoelectric Circuit Simulation

Yasuhiro Shintaku;Shota Kusu;Teppei Miyoshi;Gaku Suzuki;Kohkichi Konno;Mitiko Miura-Mattausch

Year: 2019 | Conference Paper |

Physics-Based Photodiode Model Enabling Consistent Opto-Electronic Circuit Simulation

T. Ezaki;G. Suzuki;K. Konno;O. Matsushima;Y. Mizukane;D. Navarro;M. Miyake;N. Sadachika;H. J. Mattausch;M. Miura-Mattausch

2006 International Electron Devices Meeting
Year: 2006 | Conference Paper |
Cited by: Papers (5)
The paper developed a photodiode (PD) model for circuit simulation considering, contrary to existing models, the transient carrier generation explicitly in the solution of the continuity equation. The developed model is compatible with conventional compact electrical device models and is demonstrated to enable accurate simulation of opto-electronic integrated circuits. The electric field distribut...Show More

Physics-Based Photodiode Model Enabling Consistent Opto-Electronic Circuit Simulation

T. Ezaki;G. Suzuki;K. Konno;O. Matsushima;Y. Mizukane;D. Navarro;M. Miyake;N. Sadachika;H. J. Mattausch;M. Miura-Mattausch

Year: 2006 | Conference Paper |

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 International Conference on Simulation of Semiconductor Processes and Devices
Year: 2006 | Conference Paper |
Cited by: Papers (4)
We have developed a high-frequency noise model for short channel MOSFETs by considering the position dependent surface potential which results in a non-uniform mobility distribution along the channel. The chosen approach successfully reproduces the induced-gate noise and the cross-correlation noise between drain and gate for short channel MOSFETs without additional model parameters. In particular,...Show More

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

Year: 2006 | Conference Paper |

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

IEEE Transactions on Electron Devices
Year: 2006 | Volume: 53, Issue: 9 | Journal Article |
The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximation...Show More

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

Year: 2006 | Volume: 53, Issue: 9 | Journal Article |

Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode

G. Suzuki;K. Konno;D. Navarro;N. Sadachika;Y. Mizukane;O. Matsushima;M. Miura-Mattausch

2005 International Conference On Simulation of Semiconductor Processes and Devices
Year: 2005 | Conference Paper |
Cited by: Papers (3)
Carrier transport mechanism in a lateral p-i-n photodiode (PD) has been described analytically in time domain by adopting a coordinate transformation, where carriers are treated to be stationary in the coordinate system. The developed model correctly predicts the measured delayed response of a PD to a 100ps-Gaussian pulse input, which is not observed in models employing stationary and constant ele...Show More

Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode

G. Suzuki;K. Konno;D. Navarro;N. Sadachika;Y. Mizukane;O. Matsushima;M. Miura-Mattausch

Year: 2005 | Conference Paper |

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