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Holger Vogt - IEEE Xplore Author Profile
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Holger Vogt

Also published under: H. Vogt

Publications
54
Citations
244
Publications by Year
19832020
Co-Authors:
Show All Co-Authors (120)
Image of author Holger Vogt

Holger Vogt

Also published under: H. Vogt

Affiliation

Department Electronic Components and Circuits
University of Duisburg–Essen
Duisburg, Germany
Department of Frontend Microsystems Technology
Fraunhofer Institute for Microelectronic Circuits and Systems
Duisburg, Germany

Publication Topics

Biography

Holger Vogt (Member, IEEE) received the Diploma degree in electrical engineering and the Dr.-Ing. degree from the University of Dortmund, Germany, in 1981 and 1986, respectively. Since 1985, he has been with the Fraunhofer Institute of Microelectronic Circuits and Systems (IMS), Duisburg, Germany, where he is currently the Deputy Director. He is currently heading a cleanroom facility for the co-integration of MOEMS and CMOS, dedicated to post-processing for compact microsystems on top of intelligent CMOS substrates. He is also a Professor with the Department of Electrical Engineering and Information Technology, Duisburg.(Based on document published on 18 August 2020).
Publications
54
Citations
244
Publications by Year
19832020
Co-Authors:
Show All Co-Authors (120)
Author's Published Works

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Monolithic Integration and Analysis of Vertical, Partially Encapsulated Nanoelectrode Arrays

Sonja Allani;Andreas Jupe;Oskar Staufer;Karsten Seidl;Holger Vogt

Journal of Microelectromechanical Systems
Year: 2020 | Volume: 29, Issue: 5 | Journal Article |
Cited by: Papers (1)
This study reports on the development of vertical, partially encapsulated nanoelectrodes for electrically contacting the interior of electrogenic cells with microelectronics. Intracellular electrical stimulation and recording with single cell resolution enables new insights into the electrophysiology of cells embedded in a complex multicellular network, providing detailed understanding of fundamen...Show More

Monolithic Integration and Analysis of Vertical, Partially Encapsulated Nanoelectrode Arrays

Sonja Allani;Andreas Jupe;Oskar Staufer;Karsten Seidl;Holger Vogt

Year: 2020 | Volume: 29, Issue: 5 | Journal Article |

Modeling and Characterization of Adapted 3$\omega$-Method for Thermal Conduction Measurement of Thermal Radiation Sensors

Erik Verheyen;Holger Vogt

IEEE Sensors Letters
Year: 2020 | Volume: 4, Issue: 7 | Journal Article |
Cited by: Papers (2)
In this letter, a thermal conduction measurement method for thermal radiation sensors, such as vacuum-packaged bolometers, is presented. The idea of the method is deduced from the classical 3ω-method proposed by Cahill [1]. Here, the measurement geometry is a complete sensor geometry, which is suspended from the substrate by thermal isolation legs. The most relevant performance factor for such a s...Show More

Modeling and Characterization of Adapted 3$\omega$-Method for Thermal Conduction Measurement of Thermal Radiation Sensors

Erik Verheyen;Holger Vogt

Year: 2020 | Volume: 4, Issue: 7 | Journal Article |

Hermeticity of SI1-XGEX Diaphragms for the Fabrication of a Capacitive Post-Cmos Pressure Sensor

Christian Walk;Alexander Netaev;Matthias Wiemann;Michael Görtz;Holger Vogt;Wilfried Mokwa;Karsten Seidl

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)
Year: 2019 | Conference Paper |
In this work, the hermeticity of diaphragm structures is investigated and optimized. The diaphragms are developed for the monolithic post-CMOS integration of capacitive pressure sensors. Si1-XGeX is used as diaphragm material and was deposited at temperatures below 400 °C.The hermeticity of the diaphragms was evaluated at a He pressure of 1800 hPa and in a temperature range from 50 °C to about 100...Show More

Hermeticity of SI1-XGEX Diaphragms for the Fabrication of a Capacitive Post-Cmos Pressure Sensor

Christian Walk;Alexander Netaev;Matthias Wiemann;Michael Görtz;Holger Vogt;Wilfried Mokwa;Karsten Seidl

Year: 2019 | Conference Paper |

Fabrication of Partly Encapsulated Vertical Nanoelectrodes for an Intracellular Microelectrode Array

Sonja Allani;Andreas Jupe;Holger Kappert;Holger Vogt

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)
Year: 2019 | Conference Paper |
In this work, a concept and proof of principle regarding a fabrication technique for vertical nanoelectrodes is presented. CMOS-compatible processes for the fabrication of three-dimensional tubes which are partly encapsulated by an insulation layer are conceived. An extended sacrificial layer technique using deep reactive ion etching (DRIE) and atomic layer deposition (ALD) of encapsulation and el...Show More

Fabrication of Partly Encapsulated Vertical Nanoelectrodes for an Intracellular Microelectrode Array

Sonja Allani;Andreas Jupe;Holger Kappert;Holger Vogt

Year: 2019 | Conference Paper |

Post-CMOS 3D-Integration of a Nanopellistor

Finja M. Münchenberger;Stefan Dreiner;Holger Kappert;Holger Vogt

2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
Year: 2019 | Conference Paper |
To further optimize micro pellistors and reduce the required chip area, one possibility is to fabricate the sensor on top of the integrated circuit (IC). Therefore, a sacrificial layer process developed by the Fraunhofer IMS combining deep reactive ion etching (DRIE) and atomic layer deposition (ALD) is modified. First fundamentals of pellistors and Joule heating are described. Then simulations to...Show More

Post-CMOS 3D-Integration of a Nanopellistor

Finja M. Münchenberger;Stefan Dreiner;Holger Kappert;Holger Vogt

Year: 2019 | Conference Paper |

Mechanical Test Structures for the Determination of Normal Stress in Multilayer Freestanding MEMS-Membranes

Marvin Michel;Holger Vogt

2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
Year: 2019 | Conference Paper |
Understanding the mechanical behavior of free standing membranes is a point of common interest for MEMS structures, where a certain distance or deflection of a cantilever or membrane refers directly to the detectors performance. A material system with different types of basic MEMS materials like doped silicon as well as a conducting and passivation layer was characterized. Mechanical stress was me...Show More

Mechanical Test Structures for the Determination of Normal Stress in Multilayer Freestanding MEMS-Membranes

Marvin Michel;Holger Vogt

Year: 2019 | Conference Paper |

Modeling of Thermal Conductivity for a CMOS-Compatible MEMS-ROIC Contact by TiN Nanotubes

Marvin Michel;Holger Vogt

IEEE Transactions on Electron Devices
Year: 2019 | Volume: 66, Issue: 8 | Journal Article |
Cited by: Papers (2)
Size reduction in microelectromechanical systems (MEMS) leads to more complex behavior of physical parameters affected by quantum mechanical effects. Besides specific electrical resistance, thermal conductivity is a characteristic parameter for designing application-specific MEMS. Nanotubes are able to realize an electrical contact between a sensor element and a CMOS substrate while providing suff...Show More

Modeling of Thermal Conductivity for a CMOS-Compatible MEMS-ROIC Contact by TiN Nanotubes

Marvin Michel;Holger Vogt

Year: 2019 | Volume: 66, Issue: 8 | Journal Article |

Decreasing the Actuation Voltage in Electrowetting on Dielectric With Thin and Micro-Structured Dielectric

Semih Türk;Erik Verheyen;Reinhard Viga;Sonja Allani;Andreas Jupe;Holger Vogt

2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Year: 2018 | Conference Paper |
This work presents the analysis of the minimum actuation voltage Vmin for droplet actuation with electrowetting on dielectric (EWOD). First, the fundamentals of electrowetting are described. In the second chapter, the impact on the actuation voltage in EWOD is shown by a dielectric deposited with atomic layer deposition (ALD) and micro-structured surface. In the last part, results of a simulation ...Show More

Decreasing the Actuation Voltage in Electrowetting on Dielectric With Thin and Micro-Structured Dielectric

Semih Türk;Erik Verheyen;Reinhard Viga;Sonja Allani;Andreas Jupe;Holger Vogt

Year: 2018 | Conference Paper |

Multi object detection in direct Time-of-Flight measurements with SPADs

Jan F. Haase;Maik Beer;Jennifer Ruskowski;Holger Vogt

2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Year: 2018 | Conference Paper |
Cited by: Papers (4)
We present several contributions of our test system to detect multiple targets with the direct time-of-flight technique. With a precise time-to-digital-converter it is possible to capture the time-of-flight of a short light pulse reflected by a target with high temporal resolution. Based on this technique we can relate the single events to its resulting distance and separate the different objects.Show More

Multi object detection in direct Time-of-Flight measurements with SPADs

Jan F. Haase;Maik Beer;Jennifer Ruskowski;Holger Vogt

Year: 2018 | Conference Paper |

Evaluation of a median threshold based EEPROM-PUF concept implemented in a high temperature SOI CMOS technology

Benjamin Willsch;Marius te Heesen;Julia Hauser;Stefan Dreiner;Holger Kappert;Holger Vogt

2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
Year: 2018 | Conference Paper |
Cited by: Papers (1)
Physically Unclonable Functions (PUFs) are a new type of hardware-bounded cryptographic primitives. PUFs leverage random process variations to generate unique keys suitable for the use in low-cost device identification and authentication applications. Since the keys are typically derived from a large number of semiconductor devices, a space- and power-saving implementation of PUFs in non-volatile ...Show More

Evaluation of a median threshold based EEPROM-PUF concept implemented in a high temperature SOI CMOS technology

Benjamin Willsch;Marius te Heesen;Julia Hauser;Stefan Dreiner;Holger Kappert;Holger Vogt

Year: 2018 | Conference Paper |

Simulation Results of Prospective Next Generation 3-D Thermopile Sensor and Array Circuitry Options

Erik Verheyen;Andreas Erbslöh;Reinhard Viga;Holger Vogt

IEEE Sensors Letters
Year: 2018 | Volume: 2, Issue: 2 | Journal Article |
This article presents the simulation results and design rules of a new sensor for infrared (IR)-detection using the thermoelectric effect. Within the Seebeck effect, thermopiles generate a voltage based on a temperature gradient inside the structure. State-of-the-art thermopiles are manufactured as 2-D structures directly on a substrate. Here, a possible method of 3-D integration is shown, where t...Show More

Simulation Results of Prospective Next Generation 3-D Thermopile Sensor and Array Circuitry Options

Erik Verheyen;Andreas Erbslöh;Reinhard Viga;Holger Vogt

Year: 2018 | Volume: 2, Issue: 2 | Journal Article |

Implementation of an Integrated Differential Readout Circuit for Transistor-Based Physically Unclonable Functions

Benjamin Willsch;Kai-Uwe Müller;Qi Zhang;Julia Hauser;Stefan Dreiner;Alexander Stanitzki;Holger Kappert;Rainer Kokozinski;Holger Vogt

2017 Austrochip Workshop on Microelectronics (Austrochip)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
Physically Unclonable Functions (PUFs) offer enticing possibilities to incorporate hardware-based security on semiconductor device level. In order to make efficient use of PUF functionality in lightweight cryptographic applications, a low-overhead implementation in terms of chip area and power consumption is required. In this paper a fully differential readout circuit is proposed that allows the g...Show More

Implementation of an Integrated Differential Readout Circuit for Transistor-Based Physically Unclonable Functions

Benjamin Willsch;Kai-Uwe Müller;Qi Zhang;Julia Hauser;Stefan Dreiner;Alexander Stanitzki;Holger Kappert;Rainer Kokozinski;Holger Vogt

Year: 2017 | Conference Paper |

Analysis of Semiconductor Process Variations by Means of Hierarchical Median Polish

Benjamin Willsch;Julia Hauser;Stefan Dreiner;Andreas Goehlich;Holger Kappert;Holger Vogt

2017 Austrochip Workshop on Microelectronics (Austrochip)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
The understanding and controlling of semiconductor process variation is crucial to the performance, functionality and reliability of modern ICs. Due to the complex fabrication process involving hundreds of processing steps, the analysis of the sources of variability is a non-trivial task. In this paper, a novel, simple-to-implement procedure named Hierarchical Median Polish is proposed. The method...Show More

Analysis of Semiconductor Process Variations by Means of Hierarchical Median Polish

Benjamin Willsch;Julia Hauser;Stefan Dreiner;Andreas Goehlich;Holger Kappert;Holger Vogt

Year: 2017 | Conference Paper |

Automating wafer-level test of uncooled infrared detectors using wafer-prober

M. Makhlouf;D. Goller;L. Gendrisch;S. Kolnsberg;F. Vogt;A. Utz;D. Weiler;H. Vogt

2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
Fraunhofer IMS develops and fabricates far-infrared focal plane arrays (IRFPA) using microbolometers with a pixel pitch of 17μm technology realized on top of a 0.35 μm CMOS readout integrated circuit (ROIC). The microbolometers are encapsulated by a Chip-Scale-Package (CSP) to ensure a high quality vacuum level. The CSP is realized by placing an infrared transparent lid above a solder frame surrou...Show More

Automating wafer-level test of uncooled infrared detectors using wafer-prober

M. Makhlouf;D. Goller;L. Gendrisch;S. Kolnsberg;F. Vogt;A. Utz;D. Weiler;H. Vogt

Year: 2017 | Conference Paper |

Tapering of nanoelectrodes for an intracellular contact via a double hard mask technique

Sonja Allani;Andreas Jupe;Martin Figge;Andreas Goehlich;Holger Vogt

2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
To realize an intracellular contact between nanoelectrodes and cells, a sufficient small electrode diameter is needed [1]. A sacrificial layer process developed by the Fraunhofer IMS using deep reactive ion etching and atomic layer deposition [2] is varied. A double hard mask technique is used to taper structures in a sacrificial layer and thereby the nanoelectrodes' diameter. The principles and e...Show More

Tapering of nanoelectrodes for an intracellular contact via a double hard mask technique

Sonja Allani;Andreas Jupe;Martin Figge;Andreas Goehlich;Holger Vogt

Year: 2017 | Conference Paper |

ALD-based 3D-capacitors for harsh environments

Dorothee Dietz;Yusuf Celik;Andreas Goehlich;Holger Vogt

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Year: 2016 | Conference Paper |
Cited by: Papers (1)
Passive components like capacitors for harsh environments become more and more important, e. g. in the field of deep drilling, aerospace or in the automotive industry. They have to withstand temperatures up to 300 °C with a good performance concerning leakage current, breakdown voltage and capacitance density. The whole process flow has to be CMOS-compatible in order to offer the possibility for C...Show More

ALD-based 3D-capacitors for harsh environments

Dorothee Dietz;Yusuf Celik;Andreas Goehlich;Holger Vogt

Year: 2016 | Conference Paper |

Statistical tests to determine spatial correlations in the response behavior of PUF

Benjamin Willsch;Julia Hauser;Stefan Dreiner;Andreas Goehlich;Holger Vogt

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Year: 2016 | Conference Paper |
Cited by: Papers (4)
The level of security provided by physically unclonable functions (PUFs) strongly depends on the unpredictability of its challenge-response behavior. Systematic variation in the properties of a PUF might introduce correlations in the output bits. The mutual dependence of response bits is typically not detected by conventional methods, thus leaving the PUF vulnerable to prediction attacks. New meth...Show More

Statistical tests to determine spatial correlations in the response behavior of PUF

Benjamin Willsch;Julia Hauser;Stefan Dreiner;Andreas Goehlich;Holger Vogt

Year: 2016 | Conference Paper |

Materials and technologies to enable high temperature stable MEMS and electronics for smart systems used in harsh environments

F. Gabler;F. Roscher;Ralf Döring;A. Otto;S. Ziesche;M. Ihle;Y. Celik;D. Dietz;A. Goehlich;H. Kappert;H. Vogt;F. Naumann;T. Gessner

2016 China Semiconductor Technology International Conference (CSTIC)
Year: 2016 | Conference Paper |
This paper gives an overview of technologies and materials for microsystems and electronics in harsh environmental applications including the fabrication of a multifunctional MEMS with platinum metallization, high-temperature stable CMOS circuits and trench capacitors, ceramic-based packaging technologies as well as analysis of material parameters, simulation and reliability testing.Show More

Materials and technologies to enable high temperature stable MEMS and electronics for smart systems used in harsh environments

F. Gabler;F. Roscher;Ralf Döring;A. Otto;S. Ziesche;M. Ihle;Y. Celik;D. Dietz;A. Goehlich;H. Kappert;H. Vogt;F. Naumann;T. Gessner

Year: 2016 | Conference Paper |

Thin-film SOI PIN-diode leakage current dependence on back-gate-potential and HCI traps

Andrei Schmidt;Stefan Dreiner;Holger Vogt;Uwe Paschen

2015 45th European Solid State Device Research Conference (ESSDERC)
Year: 2015 | Conference Paper |
Cited by: Papers (3)
We investigated the leakage current of thin film silicon-on-insulator (SOI) pin-diodes in dependence of the back-gate potential and hot carrier induced traps. Leakage current of virgin and hot-carrier stressed diodes was measured at distinct back-gate potentials. TCAD simulations were used to determine the mechanisms of leakage current generation at specific back-gate potentials. Traps were introd...Show More

Thin-film SOI PIN-diode leakage current dependence on back-gate-potential and HCI traps

Andrei Schmidt;Stefan Dreiner;Holger Vogt;Uwe Paschen

Year: 2015 | Conference Paper |

Enzyme Sensor With Polydimethylsiloxane Membrane and CMOS Potentiostat for Wide-Range Glucose Measurements

Stefan Mross;Peter Fürst;Sebastien Pierrat;Tom Zimmermann;Holger Vogt;Michael Kraft

IEEE Sensors Journal
Year: 2015 | Volume: 15, Issue: 12 | Journal Article |
Cited by: Papers (12)
We report on an electrochemical measurement setup comprising a glucose sensor and a CMOS potentiostat with a two-layer membrane as the first steps toward the development of an integrated in-situ sensor system for bioreactors. The potentiostat has a chip size of 2.1 mm × 2.5 mm and a linear current range from -220 nA to 240 nA with a linearity of R2 = 0.9995. For wide range measurements of glucose ...Show More

Enzyme Sensor With Polydimethylsiloxane Membrane and CMOS Potentiostat for Wide-Range Glucose Measurements

Stefan Mross;Peter Fürst;Sebastien Pierrat;Tom Zimmermann;Holger Vogt;Michael Kraft

Year: 2015 | Volume: 15, Issue: 12 | Journal Article |

Reliability of CMOS on Silicon-on-Insulator for Use at 250 $^{\circ}\hbox{C}$

Katharina Grella;Stefan Dreiner;Holger Vogt;Uwe Paschen

IEEE Transactions on Device and Materials Reliability
Year: 2014 | Volume: 14, Issue: 1 | Journal Article |
Cited by: Papers (12)
This paper deals with the reliability of a 1.0- μm CMOS-silicon-on-insulator (SOI) process, which is intended for use at 250 °C. The goal is to give an overview of the most important reliability aspects that concern devices and circuits at temperatures of 250 °C and above. The investigated reliability aspects are the gate oxide integrity in terms of time-dependent dielectric breakdown measurements...Show More

Reliability of CMOS on Silicon-on-Insulator for Use at 250 $^{\circ}\hbox{C}$

Katharina Grella;Stefan Dreiner;Holger Vogt;Uwe Paschen

Year: 2014 | Volume: 14, Issue: 1 | Journal Article |

Speed considerations for LDPD based time-of-flight CMOS 3D image sensors

Andreas Süss;Christian Nitta;Andreas Spickermann;Daniel Durini;Gabor Varga;Melanie Jung;Werner Brockherde;Bedrich J. Hosticka;Holger Vogt;Stefan Schwope

2013 Proceedings of the ESSCIRC (ESSCIRC)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
Recently a 128×96 pixel range imager with a pitch of 40 μm and a fill factor of 38 % was presented for 3D range imaging measurements based on the pulse modulated (PM) time-of-flight (ToF) principle. This sensor employs a high-speed photodetector called lateral drift-field photodiode (LDPD). During the characterization insufficiencies in charge transfer were observed for low-light illumination. Her...Show More

Speed considerations for LDPD based time-of-flight CMOS 3D image sensors

Andreas Süss;Christian Nitta;Andreas Spickermann;Daniel Durini;Gabor Varga;Melanie Jung;Werner Brockherde;Bedrich J. Hosticka;Holger Vogt;Stefan Schwope

Year: 2013 | Conference Paper |

A Novel Fully Implantable Wireless Sensor System for Monitoring Hypertension Patients

Nina J. Cleven;Jutta A. Müntjes;Holger Fassbender;Ute Urban;Michael Görtz;Holger Vogt;Maik Gräfe;Thorsten Göttsche;Tobias Penzkofer;Thomas Schmitz-Rode;Wilfried Mokwa

IEEE Transactions on Biomedical Engineering
Year: 2012 | Volume: 59, Issue: 11 | Journal Article |
This paper presents a novel fully implantable wireless sensor system intended for long-term monitoring of hypertension patients, designed for implantation into the femoral artery with computed tomography angiography. It consists of a pressure sensor and a telemetric unit, which is wirelessly connected to an extracorporeal readout station for energy supply and data recording. The system measures in...Show More

A Novel Fully Implantable Wireless Sensor System for Monitoring Hypertension Patients

Nina J. Cleven;Jutta A. Müntjes;Holger Fassbender;Ute Urban;Michael Görtz;Holger Vogt;Maik Gräfe;Thorsten Göttsche;Tobias Penzkofer;Thomas Schmitz-Rode;Wilfried Mokwa

Year: 2012 | Volume: 59, Issue: 11 | Journal Article |

Quantum Efficiency Determination of a Novel CMOS Design for Fast Imaging Applications in the Extreme Ultraviolet

Stefan Herbert;Matus Banyay;Aleksey P. Maryasov;Frank Hochschulz;Uwe Paschen;Holger Vogt;Larissa Juschkin

IEEE Transactions on Electron Devices
Year: 2012 | Volume: 59, Issue: 3 | Journal Article |
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.Show More

Quantum Efficiency Determination of a Novel CMOS Design for Fast Imaging Applications in the Extreme Ultraviolet

Stefan Herbert;Matus Banyay;Aleksey P. Maryasov;Frank Hochschulz;Uwe Paschen;Holger Vogt;Larissa Juschkin

Year: 2012 | Volume: 59, Issue: 3 | Journal Article |

CMOS photodiodes for narrow linewidth applications

Frank Hochschulz;Stefan Dreiner;Holger Vogt;Uwe Paschen

SENSORS, 2011 IEEE
Year: 2011 | Conference Paper |
Cited by: Papers (1)
In recent years CMOS image sensors have gained a major market share for general imaging applications. However, when standard CMOS image sensors are employed in applications that require the detection of light with a very small spectral width, like 3D-time-of-flight imaging or other applications with laser light illumination, problems arise, that are negligible in standard imaging applications with...Show More

CMOS photodiodes for narrow linewidth applications

Frank Hochschulz;Stefan Dreiner;Holger Vogt;Uwe Paschen

Year: 2011 | Conference Paper |

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