Author details

Jean-Bernard Lasserre

Also published under: J. B. Lasserre, Jean B. Lasserre, J. -B. Lasserre, J. Lasserre

Affiliation

LAAS CNRS, Toulouse, France

Publication Topics

Biography

J.-B. Lasserre, photograph and biography not available at the time of publication.(Based on document published on 19 October 2016).

Publications

Citations

803

Publications by Year

19822024

Co-Authors:

Show All Co-Authors (29)

Author's Published Works

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Signal duration sensitive degradation in scaled devices

G. Bersuker;E. Tang;D. Veksler

2023 IEEE International Reliability Physics Symposium (IRPS)

Year: 2023 | Conference Paper |

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Signal duration sensitive degradation in scaled devices

G. Bersuker;E. Tang;D. Veksler

2023 IEEE International Reliability Physics Symposium (IRPS)

Year: 2023 | Conference Paper |

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

SS Teja Nibhanupudi;Dmitry Veksler;Anupam Roy;Matthew Coupin;Kevin C. Matthews;Jamie Warner;Gennadi Bersuker;Jaydeep P. Kulkarni;Sanjay K. Banerjee

2022 Device Research Conference (DRC)

Year: 2022 | Conference Paper |

Cited by: Papers (2)

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Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

SS Teja Nibhanupudi;Dmitry Veksler;Anupam Roy;Matthew Coupin;Kevin C. Matthews;Jamie Warner;Gennadi Bersuker;Jaydeep P. Kulkarni;Sanjay K. Banerjee

2022 Device Research Conference (DRC)

Year: 2022 | Conference Paper |

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

J. Farmer;D. Veksler;E. Tang;G. Bersuker;D. Z. Gao;A.-M. El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2022 IEEE International Reliability Physics Symposium (IRPS)

Year: 2022 | Conference Paper |

Cited by: Papers (1)

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Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

J. Farmer;D. Veksler;E. Tang;G. Bersuker;D. Z. Gao;A.-M. El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2022 IEEE International Reliability Physics Symposium (IRPS)

Year: 2022 | Conference Paper |

Mitigating switching variability in carbon nanotube memristors

J. Farmer;W. Whitehead;A. Hall;D. Veksler;G. Bersuker;D. Gao;Al-Moatasem El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2021 IEEE International Reliability Physics Symposium (IRPS)

Year: 2021 | Conference Paper |

Cited by: Papers (1)

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Mitigating switching variability in carbon nanotube memristors

J. Farmer;W. Whitehead;A. Hall;D. Veksler;G. Bersuker;D. Gao;Al-Moatasem El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen

2021 IEEE International Reliability Physics Symposium (IRPS)

Year: 2021 | Conference Paper |

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

D. Veksler;G. Bersuker;A. W. Bushmaker;M. Mason;P. R. Shrestha;K. P. Cheung;J. P. Campbell;T. Rueckes;L. Cleveland;H. Luan;D. C. Gilmer

2020 IEEE International Reliability Physics Symposium (IRPS)

Year: 2020 | Conference Paper |

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Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

D. Veksler;G. Bersuker;A. W. Bushmaker;M. Mason;P. R. Shrestha;K. P. Cheung;J. P. Campbell;T. Rueckes;L. Cleveland;H. Luan;D. C. Gilmer

2020 IEEE International Reliability Physics Symposium (IRPS)

Year: 2020 | Conference Paper |

Switching Variability Factors in Compliance-Free Metal Oxide RRAM

D. Veksler;G. Bersuker;A. W. Bushmaker;P. R. Shrestha;K. P. Cheung;J. P. Campbell

2019 IEEE International Reliability Physics Symposium (IRPS)

Year: 2019 | Conference Paper |

Cited by: Papers (3)

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Switching Variability Factors in Compliance-Free Metal Oxide RRAM

D. Veksler;G. Bersuker;A. W. Bushmaker;P. R. Shrestha;K. P. Cheung;J. P. Campbell

2019 IEEE International Reliability Physics Symposium (IRPS)

Year: 2019 | Conference Paper |

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

D. J. McCrory;P. M. Lenahan;D. M. Nminibapiel;D. Veksler;J. T. Ryan;J. P. Campbell

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 5 | Journal Article |

Cited by: Papers (9)

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Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

D. J. McCrory;P. M. Lenahan;D. M. Nminibapiel;D. Veksler;J. T. Ryan;J. P. Campbell

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 5 | Journal Article |

Analysis and Control of RRAM Overshoot Current

Pragya R. Shrestha;David M. Nminibapiel;Jason P. Campbell;Jason T. Ryan;Dmitry Veksler;Helmut Baumgart;Kin P. Cheung

IEEE Transactions on Electron Devices

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Cited by: Papers (12)

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Analysis and Control of RRAM Overshoot Current

Pragya R. Shrestha;David M. Nminibapiel;Jason P. Campbell;Jason T. Ryan;Dmitry Veksler;Helmut Baumgart;Kin P. Cheung

IEEE Transactions on Electron Devices

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Local Field Effect on Charge-Capture/Emission Dynamics

Kin P. Cheung;Dmitry Veksler;Jason P. Campbell

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

Cited by: Papers (3)

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Local Field Effect on Charge-Capture/Emission Dynamics

Kin P. Cheung;Dmitry Veksler;Jason P. Campbell

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Cited by: Papers (3)

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Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Cited by: Papers (3)

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Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data

IEEE Transactions on Electron Devices

Year: 2017 | Volume: 64, Issue: 9 | Journal Article |

Impact of RRAM Read Fluctuations on the Program-Verify Approach

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 6 | Journal Article |

Cited by: Papers (16)

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Impact of RRAM Read Fluctuations on the Program-Verify Approach

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 6 | Journal Article |

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Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Ji-Hong Kim;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 3 | Journal Article |

Cited by: Papers (17)

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Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Ji-Hong Kim;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 3 | Journal Article |

InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements

T. Chidambaram;D. Veksler;S. Madisetti;M. Yakimov;V. Tokranov;S. Oktyabrsky

IEEE Electron Device Letters

Year: 2016 | Volume: 37, Issue: 12 | Journal Article |

Cited by: Papers (4)

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InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements

T. Chidambaram;D. Veksler;S. Madisetti;M. Yakimov;V. Tokranov;S. Oktyabrsky

IEEE Electron Device Letters

Year: 2016 | Volume: 37, Issue: 12 | Journal Article |

Device-level jitter as a probe of ultrafast traps in high-k MOSFETs

D. Veksler;J. P. Campbell;J. Zhong;H. Zhu;C. Zhao;K. P. Cheung

2016 IEEE International Reliability Physics Symposium (IRPS)

Year: 2016 | Conference Paper |

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Device-level jitter as a probe of ultrafast traps in high-k MOSFETs

D. Veksler;J. P. Campbell;J. Zhong;H. Zhu;C. Zhao;K. P. Cheung

2016 IEEE International Reliability Physics Symposium (IRPS)

Year: 2016 | Conference Paper |

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Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

G. Sereni;L. Vandelli;R. Cavicchioli;L. Larcher;D. Veksler;G. Bersuker

2015 IEEE International Reliability Physics Symposium

Year: 2015 | Conference Paper |

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Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

G. Sereni;L. Vandelli;R. Cavicchioli;L. Larcher;D. Veksler;G. Bersuker

2015 IEEE International Reliability Physics Symposium

Year: 2015 | Conference Paper |

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Tae-Woo Kim;Hyuk-Min Kwon;Seung Heon Shin;Chan-Soo Shin;Won-Kyu Park;Eddie Chiu;Manny Rivera;Jae Ik Lew;Dmitry Veksler;Tommaso Orzali;Dae-Hyun Kim

IEEE Electron Device Letters

Year: 2015 | Volume: 36, Issue: 7 | Journal Article |

Cited by: Papers (18)

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Tae-Woo Kim;Hyuk-Min Kwon;Seung Heon Shin;Chan-Soo Shin;Won-Kyu Park;Eddie Chiu;Manny Rivera;Jae Ik Lew;Dmitry Veksler;Tommaso Orzali;Dae-Hyun Kim

IEEE Electron Device Letters

Year: 2015 | Volume: 36, Issue: 7 | Journal Article |

Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

A. Padovani;L. Larcher;L. Vandelli;M. Bertocchi;R. Cavicchioli;D. Veksler;G. Bersuker

Proceedings of the 2015 International Conference on Microelectronic Test Structures

Year: 2015 | Conference Paper |

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Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

A. Padovani;L. Larcher;L. Vandelli;M. Bertocchi;R. Cavicchioli;D. Veksler;G. Bersuker

Proceedings of the 2015 International Conference on Microelectronic Test Structures

Year: 2015 | Conference Paper |

A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Yuan Taur;Han-Ping Chen;Qian Xie;Jaesoo Ahn;Paul C. McIntyre;Dennis Lin;Abhitosh Vais;Dmitry Veksler

IEEE Transactions on Electron Devices

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |

Cited by: Papers (7)

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A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Yuan Taur;Han-Ping Chen;Qian Xie;Jaesoo Ahn;Paul C. McIntyre;Dennis Lin;Abhitosh Vais;Dmitry Veksler

IEEE Transactions on Electron Devices

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |

A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Gabriele Sereni;Luca Vandelli;Dmitry Veksler;Luca Larcher

IEEE Transactions on Electron Devices

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |

Cited by: Papers (17)

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A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Gabriele Sereni;Luca Vandelli;Dmitry Veksler;Luca Larcher

IEEE Transactions on Electron Devices

Year: 2015 | Volume: 62, Issue: 3 | Journal Article |