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Kyle McDonald

Also published under: K. McDonald, K. F. McDonald

Publications
11
Citations
722
Publications by Year
19802014
Co-Authors:
Show All Co-Authors (151)
Image of author Kyle McDonald

Kyle McDonald

Also published under: K. McDonald, K. F. McDonald

Affiliation

Sandia National Laboratories
Albuquerque
NM, USA

Publication Topics

Biography

Kyle McDonald received the B.S. degree in physics from Auburn University, Auburn, AL in 1993 and the Ph.D. degree in physics from Vanderbilt University, Nashville, TN in 2001.,He is currently with Sandia National Laboratories, Albuquerque, NM.(Based on document published on 4 August 2003).
Publications
11
Citations
722
Publications by Year
19802014
Co-Authors:
Show All Co-Authors (151)
Author's Published Works

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The Susceptibility of {\hbox {TaO}}_{\rm x}-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Michael L. McLain;Harold P. Hjalmarson;Tim J. Sheridan;Patrick R. Mickel;Don Hanson;Kyle McDonald;David R. Hughart;Matthew J. Marinella

IEEE Transactions on Nuclear Science
Year: 2014 | Volume: 61, Issue: 6 | Journal Article |
Cited by: Papers (12)
This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide ( TaOx) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 ×107 rad(Si)/s to 4.7 ×108 rad(Si)/s and for pulse widths ranging from 50 ns to 50 μs. The cumulative dose in these tests did not appear to impact the obser...Show More

The Susceptibility of ${\hbox {TaO}}_{\rm x}$-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Michael L. McLain;Harold P. Hjalmarson;Tim J. Sheridan;Patrick R. Mickel;Don Hanson;Kyle McDonald;David R. Hughart;Matthew J. Marinella

Year: 2014 | Volume: 61, Issue: 6 | Journal Article |

Effects of High Dose Rate Ionizing Radiation on Fused Silica and Sapphire Films

Michael L. McLain;Fred Hartman;Tom A. Zarick;Harold P. Hjalmarson;Joseph D. Gleason;Kyle McDonald;Tim J. Sheridan

IEEE Transactions on Nuclear Science
Year: 2013 | Volume: 60, Issue: 6 | Journal Article |
Cited by: Papers (1)
The effects of high dose rate electron beam exposures on the electrical conductivity of fused silica and sapphire films are investigated via modern experimental techniques. Transient measurements have been obtained for dose rates ranging from 3×10 5 rad(Si)/s to 1×10 10 rad(Si)/s and for pulse widths ranging from 50 ns to 500 ns. The data indicate that the radiation-induced conductivity (RIC) has ...Show More

Effects of High Dose Rate Ionizing Radiation on Fused Silica and Sapphire Films

Michael L. McLain;Fred Hartman;Tom A. Zarick;Harold P. Hjalmarson;Joseph D. Gleason;Kyle McDonald;Tim J. Sheridan

Year: 2013 | Volume: 60, Issue: 6 | Journal Article |

Progress on Z-pinch Inertial Fusion Energy

C. L. Olson;G. Rochau;S. Slutz;C. Morrow;R. Olson;A. Parker;M. Cuneo;D. Hanson;G. Bennett;T. Sanford;J. Bailey;W. Stygar;R. Vesey;T. Mehlhorn;K. Struve;M. Mazarakis;M. Savage;A. Owen;T. Pointon;M. Kiefer;S. Rosenthal;L. Schneider;S. Glover;K. Reed;G. Benevides;D. Schroen;W. Krych;C. Farnum;M. Modesto;D. Oscar;L. Chhabildas;J. Boyes;V. Vigil;R. Keith;M. Turgeon;B. Smith;B. Cipiti;E. Lindgren;D. Smith;K. Peterson;V. Dandini;D. McDaniel;J. Quintenz;M. Matzen;J. P. VanDevender;W. Gauster;L. Shephard;M. Walck;T. Renk;T. Tanaka;M. Ulrickson;P. Peterson;J. De Groot;N. Jensen;R. Peterson;G. Pollock;P. Ottinger;J. Schumer;D. Kammer;I. Golovkin;G. Kulcinski;L. El-Guebaly;G. Moses;E. Mogahed;I. Sviatoslavsky;M. Sawan;M. Anderson;R. Gallix;N. Alexander;W. Rickman;H. Tran;P. Panchuk;W. Meier;J. Latkowski;R. Moir;R. Schmitt;R. Abbot;M. Abdou;A. Ying;P. Calderoni;N. Morley;S. Abdel-Khalik;D. Welch;D. Rose;W. Szaroletta;R. Curry;K. McDonald;D. Louie;S. Dean;A. Kim;S. Nedoseev;E. Grabovsky;A. Kingsep;V. Smirnov

2004 International Conference on High-Power Particle Beams (BEAMS 2004)
Year: 2004 | Conference Paper |
Cited by: Papers (2) | Patents (1)
The long-range goal of the Z-pinch IFE program is to produce an economically-attractive power plant using high-yield Z-pinch-driven targets (~3 GJ) with low rep-rate per chamber (~0.1 Hz). He present mainline choice for a Z-pinch IFE power plant uses an LTD (Linear Transformer Driver) repetitive pulsed power driver, a Recyclable Transmission Line (RTL), a dynamic hohlraum Z-pinch-driven target, an...Show More

Progress on Z-pinch Inertial Fusion Energy

C. L. Olson;G. Rochau;S. Slutz;C. Morrow;R. Olson;A. Parker;M. Cuneo;D. Hanson;G. Bennett;T. Sanford;J. Bailey;W. Stygar;R. Vesey;T. Mehlhorn;K. Struve;M. Mazarakis;M. Savage;A. Owen;T. Pointon;M. Kiefer;S. Rosenthal;L. Schneider;S. Glover;K. Reed;G. Benevides;D. Schroen;W. Krych;C. Farnum;M. Modesto;D. Oscar;L. Chhabildas;J. Boyes;V. Vigil;R. Keith;M. Turgeon;B. Smith;B. Cipiti;E. Lindgren;D. Smith;K. Peterson;V. Dandini;D. McDaniel;J. Quintenz;M. Matzen;J. P. VanDevender;W. Gauster;L. Shephard;M. Walck;T. Renk;T. Tanaka;M. Ulrickson;P. Peterson;J. De Groot;N. Jensen;R. Peterson;G. Pollock;P. Ottinger;J. Schumer;D. Kammer;I. Golovkin;G. Kulcinski;L. El-Guebaly;G. Moses;E. Mogahed;I. Sviatoslavsky;M. Sawan;M. Anderson;R. Gallix;N. Alexander;W. Rickman;H. Tran;P. Panchuk;W. Meier;J. Latkowski;R. Moir;R. Schmitt;R. Abbot;M. Abdou;A. Ying;P. Calderoni;N. Morley;S. Abdel-Khalik;D. Welch;D. Rose;W. Szaroletta;R. Curry;K. McDonald;D. Louie;S. Dean;A. Kim;S. Nedoseev;E. Grabovsky;A. Kingsep;V. Smirnov

Year: 2004 | Conference Paper |

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung;J.R. Williams;K. McDonald;L.C. Feldman

IEEE Transactions on Electron Devices
Year: 2003 | Volume: 50, Issue: 7 | Journal Article |
We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantl...Show More

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung;J.R. Williams;K. McDonald;L.C. Feldman

Year: 2003 | Volume: 50, Issue: 7 | Journal Article |

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu;B.K. Choi;H.J. Barnaby;D.M. Fleetwood;R.D. Schrimpf;K.F. Galloway;R.A. Weller;K. McDonald;U.K. Mishra;R.W. Dettmer

IEEE Transactions on Nuclear Science
Year: 2002 | Volume: 49, Issue: 6 | Journal Article |
Cited by: Papers (4)
The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in ...Show More

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Xinwen Hu;B.K. Choi;H.J. Barnaby;D.M. Fleetwood;R.D. Schrimpf;K.F. Galloway;R.A. Weller;K. McDonald;U.K. Mishra;R.W. Dettmer

Year: 2002 | Volume: 49, Issue: 6 | Journal Article |

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald;R.K. Chanana;R.A. Weller;S.T. Pantelides;L.C. Feldman;O.W. Holland;M.K. Das;J.W. Palmour

IEEE Electron Device Letters
Year: 2001 | Volume: 22, Issue: 4 | Journal Article |
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, t...Show More

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald;R.K. Chanana;R.A. Weller;S.T. Pantelides;L.C. Feldman;O.W. Holland;M.K. Das;J.W. Palmour

Year: 2001 | Volume: 22, Issue: 4 | Journal Article |

Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

G.Y. Chung;C.C. Tin;J.H. Won;J.R. Williams;K. McDonald;R.A. Weller;S.T. Pantelides;L.C. Feldman

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484)
Year: 2000 | Conference Paper |
Cited by: Papers (6)
We report the effect on SiO/sub 2//SiC interface state density and effective oxide charge of different Si:C ratios (0.12 to 0.55) used during the growth of n-4H and n-6H-SiC epitaxial layers. We also report the effects of post-growth re-oxidation anneals and post- metalization anneals on the interface state density for both n- and p-4H-SiC. The interface trap density near the conduction band and t...Show More

Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

G.Y. Chung;C.C. Tin;J.H. Won;J.R. Williams;K. McDonald;R.A. Weller;S.T. Pantelides;L.C. Feldman

Year: 2000 | Volume: 5 | Conference Paper |

LSX, The World's Largest FRC Plasma Physics Experiment

K.F. McDonald;T.E. DeHart;A.L. Hoffman

Eighth IEEE International Conference on Pulsed Power
Year: 1991 | Conference Paper |
The summer of 1990 marked the completion (on time and under budget) of a $14M very large reversed-field theta pinch experiment, called LSX (Large s Experiment), at STI Optronics. LSX is currently generating field reversed configurations (FRCs) with dimensions such that the physics has reactor relevance. The FRCs are formed using slow, programmed formation techniques which rely upon ohmic heating a...
First Page of the Article
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LSX, The World's Largest FRC Plasma Physics Experiment

K.F. McDonald;T.E. DeHart;A.L. Hoffman

Year: 1991 | Conference Paper |

Internal Injection into the NRL Modified Betatron

F. Mako;J. Golden;L. Floyd;K. McDonald;T. Smith;C. A. Kapetanakos

IEEE Transactions on Nuclear Science
Year: 1985 | Volume: 32, Issue: 5 | Journal Article |
Cited by: Papers (3)
We are reporting preliminary experimental results on the injection and trapping in the NRL Modified Betatron. In internal injection, the beam is produced by a diode located within the chamber. Using one half of the 1 m toroidal vacuum chamber, the propagated beam current and displacement are monitored as functions of the applied magnetic fields (BZ, and the toroidal field, Bθ). Our preliminary res...Show More

Internal Injection into the NRL Modified Betatron

F. Mako;J. Golden;L. Floyd;K. McDonald;T. Smith;C. A. Kapetanakos

Year: 1985 | Volume: 32, Issue: 5 | Journal Article |

PBFA I: Pulsed power driver for inertial confinement fusion

J. P. Van Devender;G. W. Barr;J. T. Crow;S. A. Goldstein;D. H. McDaniel;K. F. McDonald;T. H. Martin;W. B. S. Moore;E. L. Neau;G. D. Peterson;J. F. Seamen;D. B. Seidel;R. B. Spielman;B. N. Turman;G. Yonas;I. D. Smith

1981 4th International Topical Conference on High-Power Electron and Ion Beam Research & Technology
Year: 1981 | Conference Paper |
The PBFA I accelerator has been tested and is operational at its full power rating of 30 TW. The PBFA I experiments demonstrated that the multi-modular approach to superpower generators is viable. The modular outputs can be combined in parallel or series-parallel combinations of the magnetically insulated transmission lines to power single, ion-beam diodes or imploding plasma sources. The coupling...Show More

PBFA I: Pulsed power driver for inertial confinement fusion

J. P. Van Devender;G. W. Barr;J. T. Crow;S. A. Goldstein;D. H. McDaniel;K. F. McDonald;T. H. Martin;W. B. S. Moore;E. L. Neau;G. D. Peterson;J. F. Seamen;D. B. Seidel;R. B. Spielman;B. N. Turman;G. Yonas;I. D. Smith

Year: 1981 | Conference Paper |

An Electron-Beam Triggered Spark Gap

K. McDonald;M. Newton;E. E. Kunhardt;M. Kristiansen;A. H. Guenther

IEEE Transactions on Plasma Science
Year: 1980 | Volume: 8, Issue: 3 | Journal Article |
Cited by: Papers (11)
The triggering of a high-voltage gas-insulated spark gap by an electron (e) beam has been investigated. Rise times of approximately 2.5 ns with subnanosecond jitter (~0.2 ns) have been obtained for 3-cm gaps charged at voltages as low as 50 percent of the self-breakdown voltage (varied up to 0.5 MV). The switch delay (including the e-beam diode) was 52 ns. The triggering e-beam pulse has a duratio...Show More

An Electron-Beam Triggered Spark Gap

K. McDonald;M. Newton;E. E. Kunhardt;M. Kristiansen;A. H. Guenther

Year: 1980 | Volume: 8, Issue: 3 | Journal Article |

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