Hidetoshi Ishida - IEEE Xplore Author Profile
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Hidetoshi Ishida

Also published under: H. Ishida

Publications
33
Citations
1,476
Publications by Year
19932020
Co-Authors:
Show All Co-Authors (89)
Image of author Hidetoshi Ishida

Hidetoshi Ishida

Also published under: H. Ishida

Affiliation

Industrial Solutions Company
Panasonic Corporation
Osaka, Japan

Publication Topics

Biography

Hidetoshi Ishida (M'96) received the B.S. and M.S. degrees from Kyoto Institute of Technology, Kyoto, Japan, in 1989 and 1991, respectively, and the Ph.D. degree from Osaka University, Osaka, Japan, in 2001, all in electronics engineering.,In 1991, he joined the Panasonic Corporation, Osaka, which was called Matsushita Electric Industrial Co., Ltd., at that time, where he was engaged in the research and development of GaAs HFETs, HBTs, and GaAs MMICs in the Semiconductor Device Research Center. Since 2003, he has been engaged in the GaN-based RF and switching power devices. His current interest includes GaN-based devices with an extremely high breakdown voltage.,Dr. Ishida is a member of the IEEE Electron Devices Society. He was a recipient...
Publications
33
Citations
1,476
Publications by Year
19932020
Co-Authors:
Show All Co-Authors (89)
Author's Published Works

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100 A Solid State Circuit Breaker Using Monolithic GaN Bidirectional Switch with Two-Step Gate-Discharging Technique

Yusuke Kinoshita;Takashi Ichiryu;Asamira Suzuki;Hidetoshi Ishida

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2020 | Conference Paper |
Cited by: Papers (11)
We demonstrate a solid state circuit breaker (SSCB) using monolithic GaN bidirectional switch with two-step gate-discharging technique. A GaN bidirectional switch with dual-gate structure based on gate injection transistor (GIT) is employed to reduce on-state resistance instead of series-connected transistors which are commonly used. Furthermore, a two-step gate-discharging technique which prevent...Show More

100 A Solid State Circuit Breaker Using Monolithic GaN Bidirectional Switch with Two-Step Gate-Discharging Technique

Yusuke Kinoshita;Takashi Ichiryu;Asamira Suzuki;Hidetoshi Ishida

Year: 2020 | Conference Paper |

Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Mattia Guacci;Mina Tatic;Dominik Bortis;Johann W. Kolar;Yusuke Kinoshita;Hidetoshi Ishida

2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
Year: 2019 | Conference Paper |
The unprecedented characteristics of dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field-effect transistors (e-FETs) enable a potential performance breakthrough of current DC-link inverters, e.g. in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can conveniently replace and outperform two anti-series...Show More

Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Mattia Guacci;Mina Tatic;Dominik Bortis;Johann W. Kolar;Yusuke Kinoshita;Hidetoshi Ishida

Year: 2019 | Conference Paper |

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

E. Fabris;M. Meneghini;C. De Santi;M. Borga;G. Meneghesso;E. Zanoni;Y. Kinoshita;K. Tanaka;H. Ishida;T. Ueda

2019 IEEE International Reliability Physics Symposium (IRPS)
Year: 2019 | Conference Paper |
Cited by: Papers (7)
We investigate the dc, electroluminescence (EL) and trapping properties of gate-injection transistors without and with the pdrain terminal connected to the drain (called GITs and HD-GITs respectively) and with and without field-plate. Our results indicate that: (i) the dc characteristics are not influenced by the presence of the pdrain terminal and of the field plate; (ii) EL measurements indicate...Show More

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

E. Fabris;M. Meneghini;C. De Santi;M. Borga;G. Meneghesso;E. Zanoni;Y. Kinoshita;K. Tanaka;H. Ishida;T. Ueda

Year: 2019 | Conference Paper |

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Elena Fabris;Matteo Meneghini;Carlo De Santi;Matteo Borga;Yusuke Kinoshita;Kenichiro Tanaka;Hidetoshi Ishida;Tetsuzo Ueda;Gaudenzio Meneghesso;Enrico Zanoni

IEEE Transactions on Electron Devices
Year: 2019 | Volume: 66, Issue: 1 | Journal Article |
Cited by: Papers (27)
This paper investigates the trapping mechanisms in gate-injection transistors (GITs) without and with a pdrain electrode, referred to as GITs and Hybrid-Drain-embedded GITs (HD-GITs), respectively, used to inject holes and reduce charge trapping effects. We compare the two sets of devices under both the OFF-state and semi-ON state, to investigate the role of hot electrons in favoring the charge tr...Show More

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

Elena Fabris;Matteo Meneghini;Carlo De Santi;Matteo Borga;Yusuke Kinoshita;Kenichiro Tanaka;Hidetoshi Ishida;Tetsuzo Ueda;Gaudenzio Meneghesso;Enrico Zanoni

Year: 2019 | Volume: 66, Issue: 1 | Journal Article |

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Hidekazu Umeda;Yasuhiro Yamada;Kenichi Asanuma;Fumito Kusama;Yusuke Kinoshita;Hiroaki Ueno;Hidetoshi Ishida;Tsuguyasu Hatsuda;Tetsuzo Ueda

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2018 | Conference Paper |
Highly efficient three-phase to three-phase matrix converters using Gallium nitride (GaN) bidirectional switches with both high current and high breakdown voltage are demonstrated. The GaN switch with dual gates works as a bidirectional switch by a single device, while a conventional bidirectional switch consists of four devices by two Insulated Gate Bipolar Transistors (IGBTs) and two diodes. In ...Show More

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Hidekazu Umeda;Yasuhiro Yamada;Kenichi Asanuma;Fumito Kusama;Yusuke Kinoshita;Hiroaki Ueno;Hidetoshi Ishida;Tsuguyasu Hatsuda;Tetsuzo Ueda

Year: 2018 | Conference Paper |

GaN-based semiconductor devices for future power switching systems

Hidetoshi Ishida;Ryo Kajitani;Yusuke Kinoshita;Hidekazu Umeda;Shinji Ujita;Masahiro Ogawa;Kenichiro Tanaka;Tatsuo Morita;Satoshi Tamura;Masahiro Ishida;Tetsuzo Ueda

2016 IEEE International Electron Devices Meeting (IEDM)
Year: 2016 | Conference Paper |
GaN-based natural superjunction diodes and Gate Injection Transistors (GITs) with p-type gate on AlGaN/GaN hetero structure are promising power devices with lower on-state resistance and higher breakdown voltage for power switching applications. In this paper, the current status of the devices for integrated circuits and their application to power switching systems are reviewed, after explaining t...Show More

GaN-based semiconductor devices for future power switching systems

Hidetoshi Ishida;Ryo Kajitani;Yusuke Kinoshita;Hidekazu Umeda;Shinji Ujita;Masahiro Ogawa;Kenichiro Tanaka;Tatsuo Morita;Satoshi Tamura;Masahiro Ishida;Tetsuzo Ueda

Year: 2016 | Conference Paper |

Mechanism of Current-Collapse-Free Operation in E-Mode GaN Gate Injection Transistors Employed for Efficient Power Conversion

Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Satoshi Tamura;Hidetoshi Ishida;Masahiro Ishida;Tetsuzo Ueda

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Year: 2016 | Conference Paper |
Cited by: Papers (5)
Due to the superior characteristics of GaN to Si, they can be utilized to drastically increase the efficiency and minimize the size of power converter system. However, there has been a critical issue of the so-called current collapse where ON-state resistance is increased once GaN transistor is exposed to high voltage. From the temperature dependence of the switching characteristics of an enhancem...Show More

Mechanism of Current-Collapse-Free Operation in E-Mode GaN Gate Injection Transistors Employed for Efficient Power Conversion

Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Satoshi Tamura;Hidetoshi Ishida;Masahiro Ishida;Tetsuzo Ueda

Year: 2016 | Conference Paper |

GaN-based Gate Injection Transistors for power switching applications

Tetsuzo Ueda;Hiroyuki Handa;Yusuke Kinoshita;Hidekazu Umeda;Shinji Ujita;Ryo Kajitani;Masahiro Ogawa;Kenichiro Tanaka;Tatsuo Morita;Satoshi Tamura;Hidetoshi Ishida;Masahiro Ishida

2014 IEEE International Electron Devices Meeting
Year: 2014 | Conference Paper |
Cited by: Papers (9)
GaN-based Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction serve normally-off operations with low on-state resistances owing to the conductivity modulation by injection of holes. Established basic technologies on the GIT have shown promising features for switching applications. Further improvement of the performances would extend the applications and lead to the wid...Show More

GaN-based Gate Injection Transistors for power switching applications

Tetsuzo Ueda;Hiroyuki Handa;Yusuke Kinoshita;Hidekazu Umeda;Shinji Ujita;Ryo Kajitani;Masahiro Ogawa;Kenichiro Tanaka;Tatsuo Morita;Satoshi Tamura;Hidetoshi Ishida;Masahiro Ishida

Year: 2014 | Conference Paper |

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

Hidekazu Arase;Akio Matsushita;Akihiro Itou;Tetsuya Asano;Nobuhiko Hayashi;Daijiro Inoue;Ryutaro Futakuchi;Kazuo Inoue;Tohru Nakagawa;Masaki Yamamoto;Eiji Fujii;Yoshiharu Anda;Hidetoshi Ishida;Tetsuzo Ueda;Onur Fidaner;Michael Wiemer;Daisuke Ueda

IEEE Journal of Photovoltaics
Year: 2014 | Volume: 4, Issue: 2 | Journal Article |
Cited by: Papers (25)
We propose a novel concept of thin and compact CPV modules in which submillimeter solar cells are directly attached to lens arrays without secondary optics or an extra heat sink. With this small cell size, the optical path length of the module can be brought down to one-twentieth that of conventional CPV modules. To achieve precise alignment of the microsolar cells at the lens focal points, we hav...Show More

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

Hidekazu Arase;Akio Matsushita;Akihiro Itou;Tetsuya Asano;Nobuhiko Hayashi;Daijiro Inoue;Ryutaro Futakuchi;Kazuo Inoue;Tohru Nakagawa;Masaki Yamamoto;Eiji Fujii;Yoshiharu Anda;Hidetoshi Ishida;Tetsuzo Ueda;Onur Fidaner;Michael Wiemer;Daisuke Ueda

Year: 2014 | Volume: 4, Issue: 2 | Journal Article |

GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer

Daisuke Shibata;Kazuhiro Kaibara;Tomohiro Murata;Yasuhiro Yamada;Tatsuo Morita;Yoshiharu Anda;Masahiro Ishida;Hidetoshi Ishida;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

2011 International Electron Devices Meeting
Year: 2011 | Conference Paper |
Cited by: Papers (9) | Patents (1)
We present a novel GaN-based diode with low reverse leakage current which ensures the high voltage operation up to 600V. The diode consists of multi-junctions of AlGaN/GaN with a p-GaN overlayer where the anode and cathode are formed on the sidewalls of the channels. The tunneling current which is the origin of the leakage current can be reduced by controlling the potential barrier at the anode si...Show More

GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer

Daisuke Shibata;Kazuhiro Kaibara;Tomohiro Murata;Yasuhiro Yamada;Tatsuo Morita;Yoshiharu Anda;Masahiro Ishida;Hidetoshi Ishida;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2011 | Conference Paper |

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Naohiro Tsurumi;Hiroaki Ueno;Tomohiro Murata;Hidetoshi Ishida;Yasuhiro Uemoto;Tetsuzo Ueda;Kaoru Inoue;Tsuyoshi Tanaka

IEEE Transactions on Electron Devices
Year: 2010 | Volume: 57, Issue: 5 | Journal Article |
Reduction of thermal resistance in AlGaN/GaN heterojunction field-effect transistors (HFETs) is critical for further increase in their output power to be handled in these promising material systems. In this paper, we present a new technique to reduce it using polycrystalline AlN passivation deposited by dc sputtering as a surface heat spreader over AlGaN/GaN HFETs. The AlN is deposited by dc sputt...Show More

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Naohiro Tsurumi;Hiroaki Ueno;Tomohiro Murata;Hidetoshi Ishida;Yasuhiro Uemoto;Tetsuzo Ueda;Kaoru Inoue;Tsuyoshi Tanaka

Year: 2010 | Volume: 57, Issue: 5 | Journal Article |

GaN-based natural super junction diodes with multi-channel structures

Hidetoshi Ishida;Daisuke Shibata;Hisayoshi Matsuo;Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

2008 IEEE International Electron Devices Meeting
Year: 2008 | Conference Paper |
We propose a new breakdown mechanism of GaN-based electron devices called ldquonatural super junctionrdquo. The junction model is supported by device simulations and experiments for newly developed multi-channel diodes with a dual-recessed structure. Based on the model, the on-resistance of the diodes can be reduced keeping high breakdown voltages. The fabricated diode achieves extremely high brea...Show More

GaN-based natural super junction diodes with multi-channel structures

Hidetoshi Ishida;Daisuke Shibata;Hisayoshi Matsuo;Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2008 | Conference Paper |

Present and future prospects of gan-based power electronics

Daisuke Ueda;Masahiro Hikita;Satoshi Nakazawa;Kazushi Nakazawa;Hidetoshi Ishida;Manabu Yanagihara;Kaoru Inoue;Tetsuzo Ueda;Yasuhiro Uemoto;Tsuyoshi Tanaka;Takashi Egawa

2008 9th International Conference on Solid-State and Integrated-Circuit Technology
Year: 2008 | Conference Paper |
Cited by: Papers (15)
GaN/AlGaN device technologies are reviewed aiming at the applications to power switching systems. SL (Super Lattice) capping and QA (Quaternary Alloy) over-layer techniques have been developed to reduce the on-resistance of GaN/ AlGaN HFET. Further, we achieved GaN on Silicon epitaxial growth technology with almost the same mobility keeping the same 2DEG density, which will make the cost comparabl...Show More

Present and future prospects of gan-based power electronics

Daisuke Ueda;Masahiro Hikita;Satoshi Nakazawa;Kazushi Nakazawa;Hidetoshi Ishida;Manabu Yanagihara;Kaoru Inoue;Tetsuzo Ueda;Yasuhiro Uemoto;Tsuyoshi Tanaka;Takashi Egawa

Year: 2008 | Conference Paper |

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Hidetoshi Ishida;Daisuke Shibata;Manabu Yanagihara;Yasuhiro Uemoto;Hisayoshi Matsuo;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

IEEE Electron Device Letters
Year: 2008 | Volume: 29, Issue: 10 | Journal Article |
A breakdown mechanism of polarized semiconductors represented by GaN-based materials is presented, based on the concept of a natural super junction, which is established by the inherent material polarization. In this concept, owing to the precise matching of positive and negative polarizations of both sides of GaN and AlGaN materials, average charge concentration in the material becomes nearly zer...Show More

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Hidetoshi Ishida;Daisuke Shibata;Manabu Yanagihara;Yasuhiro Uemoto;Hisayoshi Matsuo;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2008 | Volume: 29, Issue: 10 | Journal Article |

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Yasuhiro Uemoto;Daisuke Shibata;Manabu Yanagihara;Hidetoshi Ishida;Hisayoshi Matsuo;Shuichi Nagai;Nagaraj Batta;Ming Li;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

2007 IEEE International Electron Devices Meeting
Year: 2007 | Conference Paper |
We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300 V is achieved while maintaining relative low specific on-state resistance (Ron*A) of 186 mOmegaldrcm2. Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipati...Show More

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Yasuhiro Uemoto;Daisuke Shibata;Manabu Yanagihara;Hidetoshi Ishida;Hisayoshi Matsuo;Shuichi Nagai;Nagaraj Batta;Ming Li;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2007 | Conference Paper |

650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita;Manabu Yanagihara;Hidetoshi Ishida;Masahiro Hikita;Kazuhiro Kaibara;Hisayoshi Matsuo;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

2007 IEEE International Electron Devices Meeting
Year: 2007 | Conference Paper |
We report a normally-off GaN-based monolithic bidirectional switch for the first time. The switch consists of a double-gate AlGaN/GaN gate injection transistor (GIT) which serves normally-off operation with high drain current utilizing the hole injection from the p-type gate. The fabricated bidirectional switch exhibits high breakdown voltage of 650 V for both polarities and low on-state resistanc...Show More

650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita;Manabu Yanagihara;Hidetoshi Ishida;Masahiro Hikita;Kazuhiro Kaibara;Hisayoshi Matsuo;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2007 | Conference Paper |

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto;Masahiro Hikita;Hiroaki Ueno;Hisayoshi Matsuo;Hidetoshi Ishida;Manabu Yanagihara;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

IEEE Transactions on Electron Devices
Year: 2007 | Volume: 54, Issue: 12 | Journal Article |
We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fa...Show More

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto;Masahiro Hikita;Hiroaki Ueno;Hisayoshi Matsuo;Hidetoshi Ishida;Manabu Yanagihara;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2007 | Volume: 54, Issue: 12 | Journal Article |

A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation

Yasuhiro Uemoto;Masahiro Hikita;Hiroaki Ueno;Hisayoshi Matsuo;Hidetoshi Ishida;Manabu Yanagihara;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

2006 International Electron Devices Meeting
Year: 2006 | Conference Paper |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (gate injection transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the thres...Show More

A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation

Yasuhiro Uemoto;Masahiro Hikita;Hiroaki Ueno;Hisayoshi Matsuo;Hidetoshi Ishida;Manabu Yanagihara;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

Year: 2006 | Conference Paper |

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

H. Ishida;T. Murata;M. Ishii;Y. Hirose;Y. Uemoto;T. Tanaka;D. Ueda

IEEE Transactions on Electron Devices
Year: 2006 | Volume: 53, Issue: 7 | Journal Article |
Cited by: Papers (9)
Orientation effect on AlGaN/GaN heterojunction field-effect transistors (HFETs) has been experimentally and theoretically examined in detail. The drain-currents of the fabricated AlGaN/GaN HFETs with various gate directions do not depend on the gate orientation, whereas those of GaAs-based HFETs strongly depend on the gate direction due to the piezoelectric charges induced around the gate electrod...Show More

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

H. Ishida;T. Murata;M. Ishii;Y. Hirose;Y. Uemoto;T. Tanaka;D. Ueda

Year: 2006 | Volume: 53, Issue: 7 | Journal Article |

AlGaN/GaN devices for future power switching systems

D. Ueda;T. Murata;M. Hikita;S. Nakazawa;M. Kuroda;H. Ishida;M. Yanagihara;K. Inoue;T. Ueda;Y. Uemoto;T. Tanaka;T. Egawa

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
Year: 2005 | Conference Paper |
Cited by: Papers (7) | Patents (1)
GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make ...Show More

AlGaN/GaN devices for future power switching systems

D. Ueda;T. Murata;M. Hikita;S. Nakazawa;M. Kuroda;H. Ishida;M. Yanagihara;K. Inoue;T. Ueda;Y. Uemoto;T. Tanaka;T. Egawa

Year: 2005 | Conference Paper |

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

H. Ishida;Y. Hirose;T. Murata;Y. Ikeda;T. Matsuno;K. Inoue;Y. Uemoto;T. Tanaka;T. Egawa;D. Ueda

IEEE Transactions on Electron Devices
Year: 2005 | Volume: 52, Issue: 8 | Journal Article |
A high-power single-pole double throw (SPDT) switch IC using AlGaN/GaN heterojunction field-effect transistors (HFETs) is demonstrated for the first time. The reduction of on-resistance (R/sub on/) and off-capacitance (C/sub off/) for AlGaN/GaN HFETs enables the GaN-based switch IC that can be applied for practical RF applications. A novel Si-doping technique is employed to reduce ohmic contact re...Show More

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

H. Ishida;Y. Hirose;T. Murata;Y. Ikeda;T. Matsuno;K. Inoue;Y. Uemoto;T. Tanaka;T. Egawa;D. Ueda

Year: 2005 | Volume: 52, Issue: 8 | Journal Article |

Reduction of ohmic contact resistance of AlGaN/GaN HFETs by doping of thermally diffused Si

T. Murata;M. Hikita;H. Ishida;Y. Hirose;K. Inoue;Y. Uemoto;T. Tanaka;D. Ueda

International Meeting for Future of Electron Devices, 2004.
Year: 2004 | Conference Paper |
Cited by: Papers (3)
Low ohmic contact resistance is crucial to realization of good RF and power performances of AlGaN/GaN heterojunction field effect transistors (HFETs). However, with almost universal use of Ti/Al based electrode, usual specific contact resistance (pc) remains only at 1 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm level which is insufficient for the ultimate goal of exceeding the performances of...Show More

Reduction of ohmic contact resistance of AlGaN/GaN HFETs by doping of thermally diffused Si

T. Murata;M. Hikita;H. Ishida;Y. Hirose;K. Inoue;Y. Uemoto;T. Tanaka;D. Ueda

Year: 2004 | Conference Paper |

A high power Tx/Rx switch IC using AlGaN/GaN HFETs

H. Ishida;Y. Hirose;T. Murata;A. Kanda;Y. Ikeda;T. Matsuno;K. Inoue;Y. Uemoto;T. Tanaka;T. Egawa;D. Ueda

IEEE International Electron Devices Meeting 2003
Year: 2003 | Conference Paper |
An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.Show More

A high power Tx/Rx switch IC using AlGaN/GaN HFETs

H. Ishida;Y. Hirose;T. Murata;A. Kanda;Y. Ikeda;T. Matsuno;K. Inoue;Y. Uemoto;T. Tanaka;T. Egawa;D. Ueda

Year: 2003 | Conference Paper |

A fully-integrated broadband amplifier MMIC employing a novel chip size package

Young Yun;M. Nishijima;M. Katsuno;H. Ishida;K. Minagawa;T. Nobusada;T. Tanaka

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
Year: 2002 | Conference Paper |
Cited by: Papers (3) | Patents (1)
In this work, using a novel RF-CSP, a broadband amplifier MMIC including all the matching and biasing components was developed for Ku and K band applications. To integrate DC biasing components on the MMIC, an STO (SrTiO/sub 3/) capacitor was employed. By employing an anisotropic conductive film for the RF-CSP, the MMIC fabrication process became very simple and cost effective. The packaged amplif...Show More

A fully-integrated broadband amplifier MMIC employing a novel chip size package

Young Yun;M. Nishijima;M. Katsuno;H. Ishida;K. Minagawa;T. Nobusada;T. Tanaka

Year: 2002 | Volume: 1 | Conference Paper |

A low-power GaAs front-end IC with current-reuse configuration using 0.15-/spl mu/m-gate MODFETs

H. Ishida;H. Koizumi;K. Miyatsuji;H. Takenaka;T. Tanaka;D. Ueda

IEEE Transactions on Microwave Theory and Techniques
Year: 2000 | Volume: 48, Issue: 8 | Journal Article |
Cited by: Papers (1)
We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end ICs. Excellent RF performance such as conversion gain of 30 dB and noise...Show More

A low-power GaAs front-end IC with current-reuse configuration using 0.15-/spl mu/m-gate MODFETs

H. Ishida;H. Koizumi;K. Miyatsuji;H. Takenaka;T. Tanaka;D. Ueda

Year: 2000 | Volume: 48, Issue: 8 | Journal Article |

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