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100 A Solid State Circuit Breaker Using Monolithic GaN Bidirectional Switch with Two-Step Gate-Discharging Technique
Yusuke Kinoshita;Takashi Ichiryu;Asamira Suzuki;Hidetoshi Ishida
2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Year: 2020 | Conference Paper |
Cited by: Papers (11)
We demonstrate a solid state circuit breaker (SSCB) using monolithic GaN bidirectional switch with two-step gate-discharging technique. A GaN bidirectional switch with dual-gate structure based on gate injection transistor (GIT) is employed to reduce on-state resistance instead of series-connected transistors which are commonly used. Furthermore, a two-step gate-discharging technique which prevent...Show More
Recent Progress in GaN Device Technology
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
n++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts
Romualdo A. Ferreyra;Asamira Suzuki;Tomohiro Kazumoto;Daisuke Ueda
IEEE Electron Device Letters
Cited by: Papers (16)
Non-alloy ohmic contacts were implemented based on the heavily germanium-doped GaN regrown layer by using the pico-second laser ablation technique for the first time. Owing to the enhanced surface diffusion of the ablated high-energy atoms, smoothly refilled epitaxial layers were achieved in the AlGaN/GaN recess regions. Selective growth was successfully carried out by using hydrogen silsesquioxan...Show More
Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique
Asamira Suzuki;Songbeak Choe;Yasuhiro Yamada;Shuichi Nagai;Miori Hiraiwa;Nobuyuki Otsuka;Daisuke Ueda
2014 IEEE International Electron Devices Meeting
Year: 2014 | Conference Paper |
In this paper, we present a normally-off GaN-based transistor with extremely low on-state resistance fabricated by using Ge-doped n++GaN layer for ohmic contact. We developed a new GaN regrowth technique using Ge, which achieved extremely high doping level of 1 × 1020 cm-3, and thereby the lowest specific contact resistance of 1.5 × 10-6 Ω·cm2. Selectively deposited NiO gate using Atomic Layer Dep...Show More
Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
Hidekazu Umeda;Asamira Suzuki;Yoshiharu Anda;Masahiro Ishida;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda
2010 International Electron Devices Meeting
Year: 2010 | Conference Paper |
We propose a novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate. The blocking-voltage boosting (BVB) technology utilizes ion implantation at the peripheral area of the chip as channel stoppers to terminate the leakage current from the interfacial inversion layers at AlN/Si. A dep...Show More
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