D. Denisova - IEEE Xplore Author Profile

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Author details

D. Denisova

Also published under: D. V. Denisova

Publications

3

Citations

31

Publications by Year

20032006

Co-Authors:

N. V. BondarevaN. BorodinaS. BrunoR. CherkaouiM. De Benedictis

Show All Co-Authors (10)

D. Denisova

Also published under: D. V. Denisova

Affiliation

DEE-Politecnico di Bari, Bari, Italy

Publication Topics

Hydropower Plants,
Power System,
Active Control,
Control System,
Interconnected Systems,
Power Grid,
Power Network,
Power Plants,
Braking Control,
Center For Control,
Circuit Breaker,
Communication Channels

Biography

Daria Denisova (S'03) was born in Novosibirsk, Russia, on February 27, 1983. She studies in Novosibirsk State Technical University on the 5th course of Electric Power Engineering Faculty (Master Student) and works in the Siberian Electric Power Research Institute as junior research assistance. Her special field of interest includes large-scale power system emergency stability control.(Based on document published on 16 May 2008).

Publications

3

Citations

31

Publications by Year

20032006

Co-Authors:

N. V. Bondareva
N. Borodina
S. Bruno
R. Cherkaoui
M. De Benedictis

Show All Co-Authors (10)

Author's Published Works

Search History

Showing 1-25 of 230 results

Journals (187)

Conferences (41)

Early Access Articles (2)

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Single Year
En Xia Zhang(146)
Daniel M. Fleetwood(132)
Ronald D. Schrimpf(124)
Robert A. Reed(75)
E. X. Zhang(65)
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA(96)
Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN, USA(34)
Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA(33)
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA(33)
imec, Leuven, Belgium(21)
IEEE Transactions on Nuclear Science(170)
IEEE Transactions on Device and Materials Reliability(8)
IEEE Electron Device Letters(6)
IEEE Transactions on Electron Devices(5)
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)(4)
IEEE(230)
Boston, MA, USA(4)
Bremen, Germany(4)
Monterey, CA, USA(4)
Seville, Spain(3)
Shanghai, China(3)
Charge Trapping(80)
Threshold Voltage(69)
Threshold Voltage Shift(63)
Gate Dielectric(62)
Irradiation(58)

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Results

Threshold Voltage Hysteresis and Gate Leakage in AlGaN/GaN HEMTs

X. Li;X. D. Zhao;P. F. Wang;X. Y. Luo;H. Qiu;M. W. McCurdy;R. D. Schrimpf;E. X. Zhang;D. M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2025 | Early Access Article |

Temperature-dependent threshold voltage (VTH) hysteresis and gate leakage current are characterized in commercial AlGaN/GaN HEMTs. Significant peaks in VTH hysteresis are observed at 220 ± 10 K. Gate leakage current increases with increasing temperature for as-processed devices and devices irradiated with 1.8-MeV protons at OFF-state bias, due to Mott hopping. In contrast, gate leakage current for...Show More

Threshold Voltage Hysteresis and Gate Leakage in AlGaN/GaN HEMTs

X. Li;X. D. Zhao;P. F. Wang;X. Y. Luo;H. Qiu;M. W. McCurdy;R. D. Schrimpf;E. X. Zhang;D. M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2025 | Early Access Article |

Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon PIN Photodiodes

Kellen P. Arnold;Solomon Musibau;Hannah M. Dattilo;Hayden J. Sutton;Steven L. Frankowski;Mathias Berciano;En Xia Zhang;Michael W. McCurdy;Miguel L. Crespillo;Khalid Hattar;Artemisia Tsiara;Dimitri Linten;Kristof Croes;Joris Van Campenhout;Ronald D. Schrimpf;Daniel M. Fleetwood;Robert A. Reed;Sharon M. Weiss

IEEE Transactions on Nuclear Science

Year: 2025 | Early Access Article |

On-chip germanium-silicon (Ge-Si) photodiodes are critical elements to advancing the inclusion of silicon photonics in integrated circuit design. Understanding their radiation tolerance is essential for use in instrumentation that are operated in harsh environments, where the benefits of photonic integrated circuits on performance and compactness are increasingly advantageous. Effects of contact c...Show More

Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon PIN Photodiodes

Kellen P. Arnold;Solomon Musibau;Hannah M. Dattilo;Hayden J. Sutton;Steven L. Frankowski;Mathias Berciano;En Xia Zhang;Michael W. McCurdy;Miguel L. Crespillo;Khalid Hattar;Artemisia Tsiara;Dimitri Linten;Kristof Croes;Joris Van Campenhout;Ronald D. Schrimpf;Daniel M. Fleetwood;Robert A. Reed;Sharon M. Weiss

IEEE Transactions on Nuclear Science

Year: 2025 | Early Access Article |

RF Performance and TID Hardness Tradeoffs in Annular 45-nm RF SOI CMOS Devices

Brett L. Ringel;Jeffrey W. Teng;Delgermaa Nergui;Zachary R. Brumbach;Mozhgan Hosseinzadeh;Kan Li;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

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The operability and total-ionizing-dose (TID) response of 45-nm annular RF silicon-on-insulator (SOI) nFETs are evaluated and compared with standard layouts. All devices were exposed to 10-keV X-rays, up to a dose of 1 Mrad(SiO2), at both high-gate/low-drain and low-gate/high-drain irradiation conditions. Differences in damage response to dc and small-signal performance between samples are observe...Show More

RF Performance and TID Hardness Tradeoffs in Annular 45-nm RF SOI CMOS Devices

Brett L. Ringel;Jeffrey W. Teng;Delgermaa Nergui;Zachary R. Brumbach;Mozhgan Hosseinzadeh;Kan Li;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

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Random telegraph noise (RTN) measurements are performed on as-processed, programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory transistors. Variations in current with time of up to ±20% are observed during the RTN testing interval. The RTN of these devices is relatively unaffected by irradiation of devices to 500 krad(SiO2). Root-mean-square (rms) magnitudes of measured RTN...Show More

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Isabella R. Wynocker;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Antonio Arreghini;João P. Bastos;Geert Van den Bosch;Dimitri Linten;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

Charge Trapping in Irradiated 3D Devices and ICs (Invited)

En Xia Zhang;Shintaro Toguchi;Zi Xiang Guo;Michael L. Alles;Ronald D. Schrimpf;Daniel M. Fleetwood

2024 IEEE International Reliability Physics Symposium (IRPS)

Year: 2024 | Conference Paper |

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Total-ionizing-dose (TID) irradiation-induced charge trapping and reliability issues in 3D devices and ICs are reviewed. Strong layer-to-layer coupling of TID response in sequential integrated (3DSI) devices results from positive charge trapping in the intermediate dielectric layer that underlies top-layer devices. Effects of radiation-induced charge trapping are illustrated for FDSOI ring oscilla...Show More

Charge Trapping in Irradiated 3D Devices and ICs (Invited)

En Xia Zhang;Shintaro Toguchi;Zi Xiang Guo;Michael L. Alles;Ronald D. Schrimpf;Daniel M. Fleetwood

2024 IEEE International Reliability Physics Symposium (IRPS)

Year: 2024 | Conference Paper |

Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices

Arijit Sengupta;Dennis R. Ball;Sajal Islam;Aditha S. Senarath;Andrew L. Sternberg;En Xia Zhang;Michael L. Alles;Jason M. Osheroff;Reza Ghandi;Biju Jacob;Shubhodeep Goswami;Collin W. Hitchcock;John M. Hutson;Robert A. Reed;Kenneth F. Galloway;Ronald D. Schrimpf;Arthur F. Witulski

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

Cited by: Papers (2)

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Experimental heavy-ion responses of 3-kV charge-balanced (CB) SiC power devices are compared with those of 3.3-kV planar SiC devices. The devices are similar, except the epitaxial region of the CB devices is heavily doped compared with the planar devices. The higher doping in the epitaxial region results in loweron-resistance, but typically leads to a lower threshold drain voltage at which single-...Show More

Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices

Arijit Sengupta;Dennis R. Ball;Sajal Islam;Aditha S. Senarath;Andrew L. Sternberg;En Xia Zhang;Michael L. Alles;Jason M. Osheroff;Reza Ghandi;Biju Jacob;Shubhodeep Goswami;Collin W. Hitchcock;John M. Hutson;Robert A. Reed;Kenneth F. Galloway;Ronald D. Schrimpf;Arthur F. Witulski

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics

S. Islam;A. S. Senarath;E. Farzana;D. R. Ball;A. Sengupta;N. S. Hendricks;A. Bhattacharyya;R. A. Reed;E. X. Zhang;J. S. Speck;D. M. Fleetwood;R. D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Cited by: Papers (4)

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Single-event burnout (SEB) is experimentally observed in structurally improved vertical Beta-gallium oxide ( $\beta $ -Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx Schottky contacts and high-k field-plate (FP) dielectrics. These SBDs are resistant to alpha particle strikes up to the in-air reverse bias voltage of 475 V, but SEB-induced catastrophic failure is observed during Californium-252 ...Show More

Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics

S. Islam;A. S. Senarath;E. Farzana;D. R. Ball;A. Sengupta;N. S. Hendricks;A. Bhattacharyya;R. A. Reed;E. X. Zhang;J. S. Speck;D. M. Fleetwood;R. D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Arijit Sengupta;Dennis R. Ball;Andrew L. Sternberg;Sajal Islam;Aditha S. Senarath;Robert A. Reed;Michael W. McCurdy;En Xia Zhang;John M. Hutson;Michael L. Alles;Jason M. Osheroff;Biju Jacob;Collin W. Hitchcock;Shubhodeep Goswami;Ronald D. Schrimpf;Kenneth F. Galloway;Arthur F. Witulski

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Cited by: Papers (4)

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Single-event burnout (SEB) and single-event leakage current (SELC) behavior of 1200 and 3300 V silicon carbide (SiC) power devices are analyzed based on heavy-ion irradiation tests. Both SEB and SELC degradation thresholds are improved in the 3300 V devices by at least 300 V compared to the 1200 V devices. Additionally, it was demonstrated that the measured SEB threshold is a strong function of th...Show More

LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Arijit Sengupta;Dennis R. Ball;Andrew L. Sternberg;Sajal Islam;Aditha S. Senarath;Robert A. Reed;Michael W. McCurdy;En Xia Zhang;John M. Hutson;Michael L. Alles;Jason M. Osheroff;Biju Jacob;Collin W. Hitchcock;Shubhodeep Goswami;Ronald D. Schrimpf;Kenneth F. Galloway;Arthur F. Witulski

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Daniel M. Fleetwood;Xun Li;En Xia Zhang;Ronald D. Schrimpf;Sokrates T. Pantelides

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 2 | Journal Article |

Cited by: Papers (7)

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Commercial Schottky-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) exhibit a large peak in low-frequency (LF) noise magnitude at $\sim $ 325 K. An activation energy of 0.56 ± 0.05 eV is determined for the responsible generation–recombination (G–R) center via Arrhenius analysis. Comparisons with first-principles calculations and complementary experimental studies show that this G–R cent...Show More

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Daniel M. Fleetwood;Xun Li;En Xia Zhang;Ronald D. Schrimpf;Sokrates T. Pantelides

IEEE Transactions on Electron Devices

Year: 2024 | Volume: 71, Issue: 2 | Journal Article |

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions

Xuyi Luo;Jossue Montes;Sabina D. Koukourinkova;Bastiaan L. Vaandrager;Edward S. Bielejec;Gyorgy Vizkelethy;Ronald D. Schrimpf;Daniel M. Fleetwood;En Xia Zhang

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

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The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17-MeV Si ions are investigated via current–voltage, low-frequency (LF) noise, and deep level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base–collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-depen...Show More

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions

Xuyi Luo;Jossue Montes;Sabina D. Koukourinkova;Bastiaan L. Vaandrager;Edward S. Bielejec;Gyorgy Vizkelethy;Ronald D. Schrimpf;Daniel M. Fleetwood;En Xia Zhang

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers

Zixiang Guo;En Xia Zhang;A. Chasin;D. Linten;A. Belmonte;G. Kar;Robert A. Reed;Ronald D. Schrimpf;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Cited by: Papers (2)

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Total-ionizing-dose (TID) effects are evaluated in top-gated IGZO thin-film transistors (TFTs) irradiated with different gate biases. Negative-bias irradiation leads to worst case degradation of TID response, primarily due to enhanced charge trapping in the SiO2 insulator that underlies the IGZO channel and serves as an oxygen-penetration layer during device processing. TID response comparisons wi...Show More

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers

Zixiang Guo;En Xia Zhang;A. Chasin;D. Linten;A. Belmonte;G. Kar;Robert A. Reed;Ronald D. Schrimpf;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

On-Chip Emulation and Measurement of Variable-Length Photocurrents in Sub-50nm ICs

Joseph V. D’Amico;Sean T. Vibbert;Rick M. Cadena;Michael L. Alles;Dennis R. Ball;Andrew L. Sternberg;En Xia Zhang;W. Timothy Holman;Jeffrey S. Kauppila;Lloyd W. Massengill

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

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This article presents a circuit design for measuring and emulating radiation-induced photocurrent pulses in dense, highly scaled integrated circuits (ICs) and experimental results from an implementation in a 45-nm partially depleted silicon-on-insulator (PD-SOI) process. This photocurrent measurement circuit (PMC) expands upon other work by introducing new capabilities and measurement procedures, ...Show More

On-Chip Emulation and Measurement of Variable-Length Photocurrents in Sub-50nm ICs

Joseph V. D’Amico;Sean T. Vibbert;Rick M. Cadena;Michael L. Alles;Dennis R. Ball;Andrew L. Sternberg;En Xia Zhang;W. Timothy Holman;Jeffrey S. Kauppila;Lloyd W. Massengill

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs

X. Li;P. F. Wang;X. Zhao;H. Qiu;M. Gorchichko;M. W. McCurdy;R. D. Schrimpf;E. X. Zhang;D. M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

Cited by: Papers (7)

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Donor-like defects are activated and acceptor-like defects are passivated when commercial AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or 1.8-MeV protons at low fluence. Displacement-damage-induced creation of acceptor-like defects is observed at higher proton fluences. The dehydrogenation of FeGa-H and $\text{O}_{\mathrm {N}}$ -H substitutional impuritie...Show More

Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs

X. Li;P. F. Wang;X. Zhao;H. Qiu;M. Gorchichko;M. W. McCurdy;R. D. Schrimpf;E. X. Zhang;D. M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory

Zhouhang Jiang;Zixiang Guo;Xuyi Luo;Munazza Sayed;Zubair Faris;Halid Mulaosmanovic;Stefan Duenkel;Steven Soss;Sven Beyer;Xiao Gong;Santosh Kurinec;Vijaykrishnan Narayanan;Hussam Amrouch;En Xia Zhang;Daniel M. Fleetwood;Ronald D. Schrimpf;Kai Ni

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 7 | Journal Article |

Cited by: Papers (1)

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In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energy-efficient embedded nonvolatile memory (eNVM) for space applications. We demonstrate that: i) ferroelectric HfO2 thin film is robust against X-ray an...Show More

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory

Zhouhang Jiang;Zixiang Guo;Xuyi Luo;Munazza Sayed;Zubair Faris;Halid Mulaosmanovic;Stefan Duenkel;Steven Soss;Sven Beyer;Xiao Gong;Santosh Kurinec;Vijaykrishnan Narayanan;Hussam Amrouch;En Xia Zhang;Daniel M. Fleetwood;Ronald D. Schrimpf;Kai Ni

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 7 | Journal Article |

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Daniel M. Fleetwood;En Xia Zhang;Ronald D. Schrimpf;Sokrates T. Pantelides;Stefano Bonaldo

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Cited by: Papers (7)

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A re-evaluation of experimental results within the context of first-principles calculations strongly suggests that interface traps can contribute significantly to low-frequency (1/ $f$ ) noise in irradiated MOS devices. Hydrogen-induced trap activation and passivation are likely origins of the observed fluctuations. Measured and calculated activation energies for hydrogen drift, diffusion, and dis...Show More

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Daniel M. Fleetwood;En Xia Zhang;Ronald D. Schrimpf;Sokrates T. Pantelides;Stefano Bonaldo

IEEE Transactions on Nuclear Science

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

Sajal Islam;Aditha S. Senarath;Arijit Sengupta;En Xia Zhang;Dennis R. Ball;Daniel M. Fleetwood;Ronald D. Schrimpf;Esmat Farzana;Arkka Bhattacharyya;Nolan S. Hendricks;James S. Speck

2023 Device Research Conference (DRC)

Year: 2023 | Conference Paper |

Cited by: Papers (5)

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$\beta$-Ga2O3 is an ultrawide-bandgap material (4.6–4.9 eV) with a theoretical breakdown field of about 8 MV/cm [1]. Very few experimental results have been reported so far on the radiation response of $\beta$-Ga2O3. In this work, ion-induced single-event burnout (SEB) is experimentally observed in two structurally different types of $\beta$-Ga2O3 Schottky diodes. SEB occurred by Cf-252 irradiatio...Show More

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

Sajal Islam;Aditha S. Senarath;Arijit Sengupta;En Xia Zhang;Dennis R. Ball;Daniel M. Fleetwood;Ronald D. Schrimpf;Esmat Farzana;Arkka Bhattacharyya;Nolan S. Hendricks;James S. Speck

2023 Device Research Conference (DRC)

Year: 2023 | Conference Paper |

Incorporating Component-Level Testing Into Bayesian Degradation Distributions to Estimate a Voltage Regulator’s Radiation Failure Probabilities

Richard H. Nederlander;Arthur F. Witulski;Robert A. Reed;Gabor Karsai;Ray L. Ladbury;En Xia Zhang;Ronald D. Schrimpf;Kaitlyn L. Ryder;Michael J. Campola;Nag Mahadevan;Rebekah A. Austin;Brian D. Sierawski

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Cited by: Papers (2)

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Device-level failure probabilities derived from historical, similar radiation datasets can be inputted into a system-level radiation reliability model to provide insight into that system’s failure probability. A linear voltage regulator reliability model that utilizes historical total ionizing dose (TID) [< 100 krad(SiO2)] and displacement damage dose (DDD) measurements ( $ < 9\times 10^{11}$ equ...Show More

Incorporating Component-Level Testing Into Bayesian Degradation Distributions to Estimate a Voltage Regulator’s Radiation Failure Probabilities

Richard H. Nederlander;Arthur F. Witulski;Robert A. Reed;Gabor Karsai;Ray L. Ladbury;En Xia Zhang;Ronald D. Schrimpf;Kaitlyn L. Ryder;Michael J. Campola;Nag Mahadevan;Rebekah A. Austin;Brian D. Sierawski

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

Zixiang Guo;Kan Li;Xun Li;Xuyi Luo;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Daniel M. Fleetwood;A. Chasin;J. Mitard;D. Linten

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Cited by: Papers (6)

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Total-ionizing-dose (TID) effects are evaluated in back-gated indium–gallium–zinc oxide (IGZO) thin-film transistors irradiated under different gate biases. Negative-bias irradiation leads to worst-case degradation of TID response in these devices, primarily as a result of enhanced charge trapping in the SiO2 overlayer. The relatively small peak transconductance decrease after irradiation illustra...Show More

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors

Zixiang Guo;Kan Li;Xun Li;Xuyi Luo;En Xia Zhang;Robert A. Reed;Ronald D. Schrimpf;Daniel M. Fleetwood;A. Chasin;J. Mitard;D. Linten

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Mariia Gorchichko;En Xia Zhang;Mahmud Reaz;Kan Li;Peng Fei Wang;Jingchen Cao;Rachel M. Brewer;Ronald D. Schrimpf;Robert A. Reed;Brian D. Sierawski;Michael L. Alles;Jonathan Cox;Steven L. Moran;Subramanian S. Iyer;Daniel M. Fleetwood

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 6 | Journal Article |

Cited by: Papers (3)

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Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ ${f}$ noise magnitudes, but P/E leads to trap ...Show More

Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Mariia Gorchichko;En Xia Zhang;Mahmud Reaz;Kan Li;Peng Fei Wang;Jingchen Cao;Rachel M. Brewer;Ronald D. Schrimpf;Robert A. Reed;Brian D. Sierawski;Michael L. Alles;Jonathan Cox;Steven L. Moran;Subramanian S. Iyer;Daniel M. Fleetwood

IEEE Transactions on Electron Devices

Year: 2023 | Volume: 70, Issue: 6 | Journal Article |

Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics

Patrick K. Darmawi-Iskandar;Andrew M. Aaron;En Xia Zhang;Bharat L. Bhuva;Jeffery S. Kauppila;Jim L. Davidson;Michael L. Alles;Daniel M. Fleetwood;Lloyd W. Massengill

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Cited by: Papers (3)

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Total ionizing dose (TID) irradiation and low-frequency noise characterization are performed on carbon nanotube field-effect transistors (CNTFETs). Large hysteresis due to high border-trap densities is observed in as-processed and irradiated devices. TID irradiation also leads to significant radiation-induced charge trapping in the surrounding dielectrics resulting in parametric degradation. Perco...Show More

Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics

Patrick K. Darmawi-Iskandar;Andrew M. Aaron;En Xia Zhang;Bharat L. Bhuva;Jeffery S. Kauppila;Jim L. Davidson;Michael L. Alles;Daniel M. Fleetwood;Lloyd W. Massengill

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Arijit Sengupta;Dennis R. Ball;Arthur F. Witulski;En Xia Zhang;Ronald D. Schrimpf;Kenneth F. Galloway;Robert A. Reed;Michael L. Alles;Michael W. McCurdy;Andrew L. Sternberg;Robert A. Johnson;Mick E. Howell;Jason M. Osheroff;John M. Hutson

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Cited by: Papers (12)

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Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS) diodes are presented. Measured data indicate that heavy ions having range less than the epitaxial thickness do not cause degradation or catastrophic failure, even with the device biased above the rated breakdown voltage. Measured data also indicate that when the heavy ions have range longer than the epitaxial...Show More

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Arijit Sengupta;Dennis R. Ball;Arthur F. Witulski;En Xia Zhang;Ronald D. Schrimpf;Kenneth F. Galloway;Robert A. Reed;Michael L. Alles;Michael W. McCurdy;Andrew L. Sternberg;Robert A. Johnson;Mick E. Howell;Jason M. Osheroff;John M. Hutson

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

Xuyi Luo;En Xia Zhang;Peng Fei Wang;Kan Li;Dimitri Linten;Jerome Mitard;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf

IEEE Transactions on Device and Materials Reliability

Year: 2023 | Volume: 23, Issue: 1 | Journal Article |

Cited by: Papers (5)

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Negative bias-temperature instabilities and low-frequency noise are investigated in strained Ge ${p}$ MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted activation energies for NBTI in Ge ${p}$ MOS FinFETs are smaller than for Si ${p}$ MOSFETs. Low-frequency noise magnitudes at lower temperatures are unaffected by negative-bias-temperature stress (NBTS), bu...Show More

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

Xuyi Luo;En Xia Zhang;Peng Fei Wang;Kan Li;Dimitri Linten;Jerome Mitard;Robert A. Reed;Daniel M. Fleetwood;Ronald D. Schrimpf

IEEE Transactions on Device and Materials Reliability

Year: 2023 | Volume: 23, Issue: 1 | Journal Article |

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Kan Li;Xuyi Luo;M. W. Rony;Mariia Gorchichko;Gaspard Hiblot;Stefaan Van Huylenbroeck;Anne Jourdain;Michael L. Alles;Robert A. Reed;En Xia Zhang;Daniel M. Fleetwood;Ronald D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Cited by: Papers (4)

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The temperature dependence of low-frequency noise is investigated from 80 to 320 K for nMOS and pMOS bulk Si FinFETs with SiO2/HfO2 gate dielectrics. Both types of devices show excellent stability during bias-temperature stress and high total-ionizing dose (TID) irradiation. nMOSFET 1/ $f$ noise generally decreases as measuring temperature increases, with three prominent individual defect-related...Show More

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Kan Li;Xuyi Luo;M. W. Rony;Mariia Gorchichko;Gaspard Hiblot;Stefaan Van Huylenbroeck;Anne Jourdain;Michael L. Alles;Robert A. Reed;En Xia Zhang;Daniel M. Fleetwood;Ronald D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

R. M. Cadena;D. R. Ball;E. X. Zhang;S. Islam;A. Senarath;M. W. McCurdy;E. Farzana;J. S. Speck;N. Karom;A. O’Hara;B. R. Tuttle;S. T. Pantelides;A. F. Witulski;K. F. Galloway;M. L. Alles;R. A. Reed;D. M. Fleetwood;R. D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Cited by: Papers (17)

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Low-energy ion-induced breakdown and single-event burnout (SEB) are experimentally observed in beta-gallium oxide ( $\beta $ -Ga2O3) Schottky diodes with voltages well below those of expected electrical breakdown. Fundamentally different responses were observed among alpha particle, Cf-252, and heavy-ion irradiation. Technology computer-aided design (TCAD) simulations suggest that ion-induced burn...Show More

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

R. M. Cadena;D. R. Ball;E. X. Zhang;S. Islam;A. Senarath;M. W. McCurdy;E. Farzana;J. S. Speck;N. Karom;A. O’Hara;B. R. Tuttle;S. T. Pantelides;A. F. Witulski;K. F. Galloway;M. L. Alles;R. A. Reed;D. M. Fleetwood;R. D. Schrimpf

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Stefano Bonaldo;En Xia Zhang;Serena Mattiazzo;Alessandro Paccagnella;Simone Gerardin;Ronald D. Schrimpf;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Cited by: Papers (3)

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Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage and transconductance. At doses < 10 Mrad(SiO2...Show More

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Stefano Bonaldo;En Xia Zhang;Serena Mattiazzo;Alessandro Paccagnella;Simone Gerardin;Ronald D. Schrimpf;Daniel M. Fleetwood

IEEE Transactions on Nuclear Science

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

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