Author details
Author's Published Works
Author details
Showing 1-3 of 3 results
- Sort
Filter Results
Show
Sort By
Results
Ovonic Threshold Switching for Ultralow Energy Physical Reservoir Computing
Y. Y. Guo;R. Degraeve;T. Ravsher;D. Garbin;P. Roussel;G. S. Kar;E. Bury;D. Linten;I. Verbauwhede
In this article, we demonstrate physical reservoir computing (RC) in ovonic threshold switching (OTS) devices. We show that SiGeAsSe OTS is suitable as a physical reservoir because of the nonlinear change in the number of delocalized defects. With the combination of phase space reconstruction (PSR), our algorithm can project data into high-dimensional spaces, thereby enhancing the distinguishabili...Show More
Gate oxide reliability: upcoming trends, challenges, and opportunities
B. Kaczer;R. Degraeve;J. Franco;T. Grasser;Ph. J. Roussel;E. Bury;P. Weckx;A. Chasin;S. Tyaginov;M. Vandemaele;A. Grill;B. O’Sullivan;J. Diaz Fortuny;P. Saraza Canflanca;M. Waltl;P. Rinaudo;Y. Zhao;E. Kao;R. Asanovski;E. Catapano;A. Beckers;A. Vici;B. Truijen;Y. Higashi;S. Clima;Y. Xiang;D. Sangani;L. Panarella;Q. Smets;T. Knobloch;D. Waldhör;B. Van Troeye;Y. Guo;A. Kruv;K. Viswakarma;M. Gonzalez;D. Linten
2024 IEEE Silicon Nanoelectronics Workshop (SNW)
Year: 2024 | Conference Paper |
Any product that stops functioning before its declared useful lifetime will be deemed substandard at best, dangerous or fatal at worst. Integrated circuits (ICs) are typically a part of a larger product, which, depending on the target market, may be expected to operate reliably for up to multiple decades, often in extreme environments, and in mission-critical applications. It is therefore essentia...Show More
Gate oxide reliability: upcoming trends, challenges, and opportunities
B. Kaczer;R. Degraeve;J. Franco;T. Grasser;Ph. J. Roussel;E. Bury;P. Weckx;A. Chasin;S. Tyaginov;M. Vandemaele;A. Grill;B. O’Sullivan;J. Diaz Fortuny;P. Saraza Canflanca;M. Waltl;P. Rinaudo;Y. Zhao;E. Kao;R. Asanovski;E. Catapano;A. Beckers;A. Vici;B. Truijen;Y. Higashi;S. Clima;Y. Xiang;D. Sangani;L. Panarella;Q. Smets;T. Knobloch;D. Waldhör;B. Van Troeye;Y. Guo;A. Kruv;K. Viswakarma;M. Gonzalez;D. Linten
Year: 2024 | Conference Paper |
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers
Zixiang Guo;En Xia Zhang;A. Chasin;D. Linten;A. Belmonte;G. Kar;Robert A. Reed;Ronald D. Schrimpf;Daniel M. Fleetwood
Total-ionizing-dose (TID) effects are evaluated in top-gated IGZO thin-film transistors (TFTs) irradiated with different gate biases. Negative-bias irradiation leads to worst case degradation of TID response, primarily due to enhanced charge trapping in the SiO2 insulator that underlies the IGZO channel and serves as an oxygen-penetration layer during device processing. TID response comparisons wi...Show More
IEEE Account
Purchase Details
Profile Information
Need Help?
- US & Canada: +1 800 678 4333
- Worldwide: +1 732 981 0060
- Contact & Support
- About IEEE Xplore
- Contact Us
- Help
- Accessibility
- Terms of Use
- Nondiscrimination Policy
- Sitemap
- Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.