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Delgermaa Nergui - IEEE Xplore Author Profile
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Delgermaa Nergui

Publications
23
Citations
106
Publications by Year
20182025
Co-Authors:
Show All Co-Authors (71)
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Delgermaa Nergui

Affiliation

School of Electrical and Computer Engineering
Georgia Institute of Technology
Atlanta, GA, USA

Publication Topics

Biography

,Delgermaa Nergui received her B.S. and M.S. degrees in electrical engineering in 2017 and 2021, respectively from the Georgia Institute of Technology, where she is currently pursuing a Ph.D. in electrical and computer engineering. She is advised by Dr. John D. Cressler and her current research interests include radiation effects in silicon-germanium (SiGe) devices, circuits, and systems.(Based on document published on 13 May 2024).
Publications
23
Citations
106
Publications by Year
20182025
Co-Authors:
Show All Co-Authors (71)
Author's Published Works

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RF Performance and TID Hardness Tradeoffs in Annular 45-nm RF SOI CMOS Devices

Brett L. Ringel;Jeffrey W. Teng;Delgermaa Nergui;Zachary R. Brumbach;Mozhgan Hosseinzadeh;Kan Li;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2025 | Volume: 72, Issue: 2 | Journal Article |
The operability and total-ionizing-dose (TID) response of 45-nm annular RF silicon-on-insulator (SOI) nFETs are evaluated and compared with standard layouts. All devices were exposed to 10-keV X-rays, up to a dose of 1 Mrad(SiO2), at both high-gate/low-drain and low-gate/high-drain irradiation conditions. Differences in damage response to dc and small-signal performance between samples are observe...Show More

RF Performance and TID Hardness Tradeoffs in Annular 45-nm RF SOI CMOS Devices

Brett L. Ringel;Jeffrey W. Teng;Delgermaa Nergui;Zachary R. Brumbach;Mozhgan Hosseinzadeh;Kan Li;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

Year: 2025 | Volume: 72, Issue: 2 | Journal Article |

TID and ELDRS Evaluation of SiGe HBTs Integrated in a 45-nm PDSOI BiCMOS Process

Delgermaa Nergui;Zachary R. Brumbach;Jeffrey W. Teng;James H. Shin;Delwyn G. Sam;George N. Tzintzarov;Jennifer L. Taggart;Aaron W. Wright;Adam W. Bushmaker;Phoenix Harris;Mike McCurdy;Robert A. Reed;John D. Cressler

2024 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2024 NSREC)
Year: 2024 | Conference Paper |
Total-ionizing dose (TID) response and enhanced low-dose-rate-sensitivity (ELDRS) of newly-developed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) integrated in a 45-nm partially depleted silicon-on-insulator (PDSOI) BiCMOS process are evaluated. The devices showed good TID tolerance when irradiated at both low and high dose rates. The SiGe HBTs experienced increased collector...Show More

TID and ELDRS Evaluation of SiGe HBTs Integrated in a 45-nm PDSOI BiCMOS Process

Delgermaa Nergui;Zachary R. Brumbach;Jeffrey W. Teng;James H. Shin;Delwyn G. Sam;George N. Tzintzarov;Jennifer L. Taggart;Aaron W. Wright;Adam W. Bushmaker;Phoenix Harris;Mike McCurdy;Robert A. Reed;John D. Cressler

Year: 2024 | Conference Paper |

TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization

Justin P. Heimerl;Jeffrey W. Teng;Harrison P. Lee;Delgermaa Nergui;Jackson P. Moody;John D. Cressler

2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Year: 2024 | Conference Paper |
Cited by: Papers (1)
This work investigates the automatic design of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) germanium profiles utilizing Bayesian optimization in a commercial TCAD engine. The time-intensive nature of device simulation renders standard numerical optimization strategies infeasible, as gradients are expensive to approximate, and candidate objective functions, such as device minim...Show More

TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization

Justin P. Heimerl;Jeffrey W. Teng;Harrison P. Lee;Delgermaa Nergui;Jackson P. Moody;John D. Cressler

Year: 2024 | Conference Paper |

Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures

Harrison P. Lee;Delgermaa Nergui;Jeffrey W. Teng;Jackson P. Moody;Nelson E. Sepúlveda-Ramos;John D. Cressler

2024 IEEE International Reliability Physics Symposium (IRPS)
Year: 2024 | Conference Paper |
This paper investigates the mixed-mode (MM) reliability of fourth-generation silicon germanium heterojunction bipolar transistors at temperatures ranging from 300 K to 25 K. Results show that the classical MM damage mechanism, which results in increased base leakage current as a result of hot carriers generated in the CB junction, becomes more prevalent as temperature is decreased, but that at tem...Show More

Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures

Harrison P. Lee;Delgermaa Nergui;Jeffrey W. Teng;Jackson P. Moody;Nelson E. Sepúlveda-Ramos;John D. Cressler

Year: 2024 | Conference Paper |

TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions

Zachary R. Brumbach;Jeffrey W. Teng;Delgermaa Nergui;Justin P. Heimerl;Brett L. Ringel;Yaw A. Mensah;Delwyn G. Sam;Jackson P. Moody;Benjamin J. Blalock;Dennis O. Thorburn;Linda Del Castillo;Mohammad M. Mojarradi;John D. Cressler

2024 IEEE Aerospace Conference
Year: 2024 | Conference Paper |
Cited by: Papers (1)
Europa lies in Jupiter’s colossal radiation belt, producing radiation surface conditions that are so severe (5 Mrad[Si]) that most modern electronics would experience degradation in a matter of days. This challenge, coupled with the sub-100 K surface temperatures, leads to a very hostile environment for a viable electronic infrastructure. To help enable a future mission for landing on Europa’s sur...Show More

TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions

Zachary R. Brumbach;Jeffrey W. Teng;Delgermaa Nergui;Justin P. Heimerl;Brett L. Ringel;Yaw A. Mensah;Delwyn G. Sam;Jackson P. Moody;Benjamin J. Blalock;Dennis O. Thorburn;Linda Del Castillo;Mohammad M. Mojarradi;John D. Cressler

Year: 2024 | Conference Paper |

Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

Delgermaa Nergui;Zachary R. Brumbach;Adrian Ildefonso;Jeffrey W. Teng;Sunil G. Rao;Brett L. Ringel;Ani Khachatrian;Dale McMorrow;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2024 | Volume: 71, Issue: 8 | Journal Article |
Cited by: Papers (1)
Three third-order digital modulation schemes, rectangular 8-quadrature amplitude modulation (8-QAM), 8-phase shift keying (8-PSK), and star 8-QAM are compared for RF receiver-level single-event upset (SEU) sensitivity using laser pulses to strike the low-noise amplifier (LNA). Star 8-QAM had significantly better SEU resilience than 8-PSK and rectangular 8-QAM, suggesting that the choice of the con...Show More

Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

Delgermaa Nergui;Zachary R. Brumbach;Adrian Ildefonso;Jeffrey W. Teng;Sunil G. Rao;Brett L. Ringel;Ani Khachatrian;Dale McMorrow;John D. Cressler

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview

Jeffrey W. Teng;Delgermaa Nergui;Yaw A. Mensah;Adrian Ildefonso;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2024 | Volume: 71, Issue: 8 | Journal Article |
Cited by: Papers (5)
The application of radiation-hardening by design (RHBD) to the low-noise amplifier (LNA) in an RF communications receiver has promise for improving data fidelity in applications subject to single-event effects (SEEs). In order to overcome the challenges of empirically modeling single-event transient (SET) propagation in RF receivers, calibrated technology computer-aided design (TCAD) is used to pe...Show More

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview

Jeffrey W. Teng;Delgermaa Nergui;Yaw A. Mensah;Adrian Ildefonso;John D. Cressler

Year: 2024 | Volume: 71, Issue: 8 | Journal Article |

Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach–Zehnder Modulators for Space-Based Optical Communications

Mozhgan Hosseinzadeh;Jeffrey W. Teng;Delgermaa Nergui;Brett L. Ringel;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2024 | Volume: 71, Issue: 4 | Journal Article |
Optical single-event transients (OSETs) were measured for the first time in integrated silicon-photonic (SiPh) phase shifters and Mach-Zehnder modulators (MZMs). A pulsed laser was utilized to induce a dense cloud of electron–hole pairs (EHPs) in one arm of the MZM by employing the two-photon absorption (TPA) process. Experimental data demonstrated the creation and propagation of transients in bot...Show More

Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach–Zehnder Modulators for Space-Based Optical Communications

Mozhgan Hosseinzadeh;Jeffrey W. Teng;Delgermaa Nergui;Brett L. Ringel;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;John D. Cressler

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Zachary R. Brumbach;Delgermaa Nergui;Jeffrey W. Teng;Yaw A. Mensah;Delwyn G. Sam;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2024 | Volume: 71, Issue: 4 | Journal Article |
Cited by: Papers (1)
A comparison of laser-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed (HS) applications and high-breakdown (HB) applications is presented. A significantly lower amplitude SET response at low laser pulse energies was observed in the HS device compared to the HB device. At high laser pulse energies, however, th...Show More

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Zachary R. Brumbach;Delgermaa Nergui;Jeffrey W. Teng;Yaw A. Mensah;Delwyn G. Sam;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;John D. Cressler

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

Delgermaa Nergui;Jeffrey W. Teng;Zachary R. Brumbach;Adrian Ildefonso;Sunil G. Rao;Ani Khachatrian;Dale McMorrow;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2024 | Volume: 71, Issue: 4 | Journal Article |
Cited by: Papers (3)
Standard digital modulation schemes are compared for receiver-level single-event upset (SEU) sensitivity. Single-event transients (SETs) on the wideband silicon–germanium (SiGe) low-noise amplifier (LNA) carrying on–off keying (OOK), binary phase-shift keying (BPSK), and frequency-shift keying (2-FSK) modulated data were induced using laser pulses. Both the modulation scheme and its detection meth...Show More

Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

Delgermaa Nergui;Jeffrey W. Teng;Zachary R. Brumbach;Adrian Ildefonso;Sunil G. Rao;Ani Khachatrian;Dale McMorrow;John D. Cressler

Year: 2024 | Volume: 71, Issue: 4 | Journal Article |

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

Harrison P. Lee;Nelson E. Sepúlveda-Ramos;Jeffrey W. Teng;Jackson P. Moody;Delgermaa Nergui;Brett L. Ringel;Zachary R. Brumbach;Alizeh Premani;Uppili S. Raghunathan;Vibhor Jain;John D. Cressler

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Year: 2023 | Conference Paper |
The effects of carbon doping in the SiGe base on the electrical reliability of SiGe HBTs are investigated. This study uses three separate SiGe HBTs, each with an identical process flow with the exception of the carbon dose introduced during the SiGe epitaxial growth. These devices are characterized for open-base collector-emitter breakdown voltage $BV_{CEO}$ and open-emitter collector-base breakdo...Show More

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

Harrison P. Lee;Nelson E. Sepúlveda-Ramos;Jeffrey W. Teng;Jackson P. Moody;Delgermaa Nergui;Brett L. Ringel;Zachary R. Brumbach;Alizeh Premani;Uppili S. Raghunathan;Vibhor Jain;John D. Cressler

Year: 2023 | Conference Paper |

Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides

George N. Tzintzarov;Jeffrey W. Teng;Delgermaa Nergui;Brett L. Ringel;Stephen D. LaLumondiere;Daniele M. Monahan;Arielle Little;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2023 | Volume: 70, Issue: 8 | Journal Article |
Cited by: Papers (3)
In this work, integrated silicon-photonic waveguides are exposed to ionizing radiation. A microbeam X-ray source was utilized to deliver an isolated dose to a waveguide that behaved as one branch of an integrated Mach–Zehnder interferometer (MZI) structure, such that any radiation-induced phase shifts can be directly measured. It is found that the silicon waveguides used in the present study exhib...Show More

Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides

George N. Tzintzarov;Jeffrey W. Teng;Delgermaa Nergui;Brett L. Ringel;Stephen D. LaLumondiere;Daniele M. Monahan;Arielle Little;John D. Cressler

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

Adrian Ildefonso;Joel M. Hales;Ani Khachatrian;Jeffrey W. Teng;George N. Tzintzarov;Delgermaa Nergui;Brett L. Ringel;Uppili Raghunathan;Vibhor Jain;John D. Cressler;Dale McMorrow

IEEE Transactions on Nuclear Science
Year: 2023 | Volume: 70, Issue: 8 | Journal Article |
Cited by: Papers (2)
The impact of carbon doping on the single-event transient (SET) response of SiGe heterojunction bipolar transistors (HBTs) was evaluated using pulsed-laser charge generation via two-photon absorption (TPA). Special device structures with different amounts of carbon were fabricated by GlobalFoundries and characterized. Despite the fact that carbon is known to introduce bulk traps in the SiGe film, ...Show More

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

Adrian Ildefonso;Joel M. Hales;Ani Khachatrian;Jeffrey W. Teng;George N. Tzintzarov;Delgermaa Nergui;Brett L. Ringel;Uppili Raghunathan;Vibhor Jain;John D. Cressler;Dale McMorrow

Year: 2023 | Volume: 70, Issue: 8 | Journal Article |

Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Jeffrey W. Teng;Delgermaa Nergui;George N. Tzintzarov;Brett L. Ringel;Zachary R. Brumbach;Justin P. Heimerl;Yaw A. Mensah;Jackson P. Moody;Dennis O. Thorbourn;Linda Del Castillo;Mohammad M. Mojarradi;Benjamin J. Blalock;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2023 | Volume: 70, Issue: 4 | Journal Article |
Cited by: Papers (5)
To support the use of SiGe BiCMOS for future mission targets such as Europa, which are subject to high radiation doses and cryogenic temperatures, SiGe heterojunction bipolar transistors (HBTs) were exposed to 1-MeV electrons to 5 Mrad(Si) at 300, 200, and 115 K. The presented results are the first in situ characterization of electron irradiation at cryogenic temperatures in SiGe HBTs. Lower tempe...Show More

Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Jeffrey W. Teng;Delgermaa Nergui;George N. Tzintzarov;Brett L. Ringel;Zachary R. Brumbach;Justin P. Heimerl;Yaw A. Mensah;Jackson P. Moody;Dennis O. Thorbourn;Linda Del Castillo;Mohammad M. Mojarradi;Benjamin J. Blalock;John D. Cressler

Year: 2023 | Volume: 70, Issue: 4 | Journal Article |

Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

Delgermaa Nergui;Jeffrey W. Teng;Mozghan Hosseinzadeh;Yaw Mensah;Kan Li;Mariia Gorchichko;Adrian Ildefonso;Brett L. Ringel;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2022 | Volume: 69, Issue: 5 | Journal Article |
Cited by: Papers (7)
The total-ionizing-dose response of third-generation SiGe HBTs was investigated at elevated temperatures (80 °C and 130 °C) and compared with the response at 30 °C. The devices show less damage to irradiation at higher temperatures. Annealing experiments and TCAD simulations are used to investigate the degradation mechanism. The reduced degradation in forward mode at elevated temperatures is cause...Show More

Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

Delgermaa Nergui;Jeffrey W. Teng;Mozghan Hosseinzadeh;Yaw Mensah;Kan Li;Mariia Gorchichko;Adrian Ildefonso;Brett L. Ringel;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

Year: 2022 | Volume: 69, Issue: 5 | Journal Article |

Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems

George N. Tzintzarov;Jeffrey W. Teng;Amanda N. Bozovich;Gregory R. Allen;Delgermaa Nergui;Yaw A. Mensah;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2022 | Volume: 69, Issue: 3 | Journal Article |
Cited by: Papers (3)
Ion-induced SETs were captured from a germanium photodiode (PD) in an integrated silicon photonics technology platform. Statistics from 400 ion-strike events were extracted for various optical powers and LETs incident on the PD. The results show that the transient peak decreases with increasing optical power. TCAD simulation results indicate that photo-generated carriers decrease the built-in elec...Show More

Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems

George N. Tzintzarov;Jeffrey W. Teng;Amanda N. Bozovich;Gregory R. Allen;Delgermaa Nergui;Yaw A. Mensah;John D. Cressler

Year: 2022 | Volume: 69, Issue: 3 | Journal Article |

Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation

Jeffrey W. Teng;Delgermaa Nergui;Hari Parameswaran;Nelson E. Sepúlveda-Ramos;George N. Tzintzarov;Yaw Mensah;Clifford D. Cheon;Sunil G. Rao;Brett Ringel;Mariia Gorchichko;Kan Li;Hanbin Ying;Adrian Ildefonso;Nathaniel A. Dodds;R. Nathan Nowlin;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2022 | Volume: 69, Issue: 3 | Journal Article |
Cited by: Papers (1)
Integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of $2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$ cm−2. Changes in both dc leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose (TID) is shown to be suppressed by non-quasi-static (NQ...Show More

Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation

Jeffrey W. Teng;Delgermaa Nergui;Hari Parameswaran;Nelson E. Sepúlveda-Ramos;George N. Tzintzarov;Yaw Mensah;Clifford D. Cheon;Sunil G. Rao;Brett Ringel;Mariia Gorchichko;Kan Li;Hanbin Ying;Adrian Ildefonso;Nathaniel A. Dodds;R. Nathan Nowlin;En Xia Zhang;Daniel M. Fleetwood;John D. Cressler

Year: 2022 | Volume: 69, Issue: 3 | Journal Article |

Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

Delgermaa Nergui;Adrian Ildefonso;George N. Tzintzarov;Nelson E. Lourenco;Anup P. Omprakash;Patrick S. Goley;Zachary E. Fleetwood;Stephen D. LaLumondiere;Jeremy P. Bonsall;Daniele M. Monahan;Hunter Kettering;Dale L. Brewe;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2020 | Volume: 67, Issue: 1 | Journal Article |
Cited by: Papers (9)
This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data and circuit-level upset data from pulsed X-rays are analyzed and compared to those of heavy-ions. 3-D TCAD modeling is utilized to understand the source of the differences in the transients. The transient peak from the...Show More

Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

Delgermaa Nergui;Adrian Ildefonso;George N. Tzintzarov;Nelson E. Lourenco;Anup P. Omprakash;Patrick S. Goley;Zachary E. Fleetwood;Stephen D. LaLumondiere;Jeremy P. Bonsall;Daniele M. Monahan;Hunter Kettering;Dale L. Brewe;John D. Cressler

Year: 2020 | Volume: 67, Issue: 1 | Journal Article |

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Adrian Ildefonso;George N. Tzintzarov;Delgermaa Nergui;Anup P. Omprakash;Patrick S. Goley;Joel M. Hales;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Jeffrey H. Warner;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2020 | Volume: 67, Issue: 1 | Journal Article |
Cited by: Papers (11)
A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a reduction of sensitive volume of $\approx 350\times $ for the SiGe HBTs fabricated on SOI compared to those on a bulk substrate. Furthermore, the result...Show More

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Adrian Ildefonso;George N. Tzintzarov;Delgermaa Nergui;Anup P. Omprakash;Patrick S. Goley;Joel M. Hales;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Jeffrey H. Warner;John D. Cressler

Year: 2020 | Volume: 67, Issue: 1 | Journal Article |

New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

Joel M. Hales;Ani Khachatrian;Stephen Buchner;Jeffrey Warner;Adrian Ildefonso;George N. Tzintzarov;Delgermaa Nergui;Daniele M. Monahan;Stephen D. LaLumondiere;John D. Cressler;Dale McMorrow

IEEE Transactions on Nuclear Science
Year: 2020 | Volume: 67, Issue: 1 | Journal Article |
Cited by: Papers (21)
A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by heavy ions. In this approach, which utilizes an axicon rather than a spherical lens, the conventional Gaussian beam is replaced by a quasi-Bessel beam. The key feature of a quasi-Bessel beam, relevant to pulsed-laser single-event effects (PL-SEE...Show More

New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

Joel M. Hales;Ani Khachatrian;Stephen Buchner;Jeffrey Warner;Adrian Ildefonso;George N. Tzintzarov;Delgermaa Nergui;Daniele M. Monahan;Stephen D. LaLumondiere;John D. Cressler;Dale McMorrow

Year: 2020 | Volume: 67, Issue: 1 | Journal Article |

Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

George N. Tzintzarov;Adrian Ildefonso;Patrick S. Goley;Milad Frounchi;Delgermaa Nergui;Sunil G. Rao;Jeffrey Teng;Jacob Campbell;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Jeffrey H. Warner;Mehmet Kaynak;Lars Zimmermann;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2020 | Volume: 67, Issue: 1 | Journal Article |
Cited by: Papers (3)
The propagation of single-event transients from the electrical to the photonic domain in a segmented Mach-Zehnder modulator was investigated using pulsed-laser measurements and lumerical simulations. Although electrical transients can heavily degrade the input data to the modulator, almost all of the degradation can be suppressed once it is converted into the optical domain. The mitigation of tran...Show More

Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

George N. Tzintzarov;Adrian Ildefonso;Patrick S. Goley;Milad Frounchi;Delgermaa Nergui;Sunil G. Rao;Jeffrey Teng;Jacob Campbell;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Jeffrey H. Warner;Mehmet Kaynak;Lars Zimmermann;John D. Cressler

Year: 2020 | Volume: 67, Issue: 1 | Journal Article |

Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

Adrian Ildefonso;Zachary E. Fleetwood;George N. Tzintzarov;Joel M. Hales;Delgermaa Nergui;Milad Frounchi;Ani Khachatrian;Stephen P. Buchner;Dale Mcmorrow;Jeffrey H. Warner;Joseph Harms;Anna Erickson;Kay Voss;Véronique Ferlet-Cavrois;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2019 | Volume: 66, Issue: 1 | Journal Article |
Cited by: Papers (20)
An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event transients induced via two-photon absorption (TPA) and heavy ions is presented. The approach focuses on identification and extraction of waveform characteristics, or “features,” and minimizing the error between features produced by TPA and io...Show More

Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

Adrian Ildefonso;Zachary E. Fleetwood;George N. Tzintzarov;Joel M. Hales;Delgermaa Nergui;Milad Frounchi;Ani Khachatrian;Stephen P. Buchner;Dale Mcmorrow;Jeffrey H. Warner;Joseph Harms;Anna Erickson;Kay Voss;Véronique Ferlet-Cavrois;John D. Cressler

Year: 2019 | Volume: 66, Issue: 1 | Journal Article |

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler

IEEE Transactions on Nuclear Science
Year: 2018 | Volume: 65, Issue: 1 | Journal Article |
Cited by: Papers (9)
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technol...Show More

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

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