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Demonstration of Robust Retention in Band Engineered FEFETs for NAND Storage Applications Using Tunnel Dielectric Layer
Prasanna Venkatesan;Lance Fernandes;Priyankka Ravikumar;Chinsung Park;Huy Tran;Zekai Wang;Hari Jayasankar;Amrit Garlapati;Taeyoung Song;Mengkun Tian;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Shimeng Yu;Suman Datta;Wanki Kim;Daewon Ha;Asif Khan
We perform a comprehensive study of memory retention characteristics in ferroelectric field-effect transistors with different engineered gate stacks designed to achieve a large memory window (MW) for NAND storage applications. Through this study, we show that the widely reported retention loss in these band-engineered FEFETs can be mitigated by optimizing the position of the dielectric insert. Spe...Show More
Demonstration of Robust Retention in Band Engineered FEFETs for NAND Storage Applications Using Tunnel Dielectric Layer
Prasanna Venkatesan;Lance Fernandes;Priyankka Ravikumar;Chinsung Park;Huy Tran;Zekai Wang;Hari Jayasankar;Amrit Garlapati;Taeyoung Song;Mengkun Tian;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Shimeng Yu;Suman Datta;Wanki Kim;Daewon Ha;Asif Khan
Optimizing Memory Window for Ferroelectric Nand Applications: An Experimental Study on Dielectric Material Selection and Layer Positioning
Lance Fernandes;Prasanna Venkatesan Ravindran;Jiayi Chen;Mengkun Tian;Dipjyoti Das;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Shimeng Yu;Suman Datta;Asif Khan
We present an experimental study optimizing a band-engineered gate-stack by incorporating both a tunnel dielectric layer (TDL) and a gate blocking layer (GBL) for ferroelectric (FE) nand flash applications, with a total thickness budget of 18 nm. Using Hf _{{0}.{5}} Zr _{{0}.{5}} O2 (HZO) as the FE material, we explore Al2O3, SiO2, Si3N4, and HfO2 as TDL and GBL materials. By systematically va...Show More
Optimizing Memory Window for Ferroelectric Nand Applications: An Experimental Study on Dielectric Material Selection and Layer Positioning
Lance Fernandes;Prasanna Venkatesan Ravindran;Jiayi Chen;Mengkun Tian;Dipjyoti Das;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Shimeng Yu;Suman Datta;Asif Khan
Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping
Yixin Qin;Saikat Chakraborty;Zijian Zhao;Kijoon Kim;Suhwan Lim;Jongho Woo;Kwangsoo Kim;Wanki Kim;Daewon Ha;Xiao Gong;Asif Khan;Vijaykrishnan Narayanan;Jaydeep P. Kulkarni;Kai Ni
2024 IEEE International Electron Devices Meeting (IEDM)
Year: 2024 | Conference Paper |
In this work, we performed a comprehensive experimental and modeling study, clarifying the role of ferroelectric materials in boosting the memory window of FeFETs with gate-side charge injection for the first time. We separated the ferroelectric contributions to the memory window into remnant polarization and top charge trap layer (CTL) trapping. Our findings demonstrate that: (i) Ferroelectric ma...Show More
Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping
Yixin Qin;Saikat Chakraborty;Zijian Zhao;Kijoon Kim;Suhwan Lim;Jongho Woo;Kwangsoo Kim;Wanki Kim;Daewon Ha;Xiao Gong;Asif Khan;Vijaykrishnan Narayanan;Jaydeep P. Kulkarni;Kai Ni
Year: 2024 | Conference Paper |
A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping
Zijian Zhao;Yixin Qin;Jiahui Duan;YuShan Lee;Suhwan Lim;Kijoon Kim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Vijaykrishnan Narayanan;Kai Ni
In this work, we have developed a large memory window (MW) ferroelectric field effect transistor (FeFET) memory for vertical NAND storage. We demonstrate that: 1) by inserting a top functional layer above the ferroelectric, gate side injection pumped by ferroelectric switching event can be enhanced, thus increasing the MW; 2) inspired by the charge trap flash, SiNX is chosen as the charge trapping...Show More
Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
Prasanna Venkatesan;Chinsung Park;Taeyoung Song;Lance Fernandes;Dipjyoti Das;Nashrah Afroze;Priyankka Gundlapudi Ravikumar;Mengkun Tian;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Souvik Mahapatra;Shimeng Yu;Suman Datta;Asif Khan
IEEE Electron Device Letters
Cited by: Papers (1)
We study the disturb characteristics of ferroelectric field-effect transistors (FEFETs) with band-engineered gate stacks. We demonstrate that integrating a dielectric Al2O3 layer within the ferroelectric (FE) Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 layer in the gate stack significantly enhances the memory window (MW), achieving levels suitable for quad-level cell operation (approximately 7.5 V) while o...Show More
Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
Prasanna Venkatesan;Chinsung Park;Taeyoung Song;Lance Fernandes;Dipjyoti Das;Nashrah Afroze;Priyankka Gundlapudi Ravikumar;Mengkun Tian;Hang Chen;Winston Chern;Kijoon Kim;Jongho Woo;Suhwan Lim;Kwangsoo Kim;Wanki Kim;Daewon Ha;Souvik Mahapatra;Shimeng Yu;Suman Datta;Asif Khan
Post-cycling data retention failure in multilevel nor flash memory with nitrided tunnel-oxide
Wook H. Lee;Chang-Hyun Hur;Hyun-Min Lee;Hwanbae Yoo;Sang-Eun Lee;Bong-Yong Lee;Chankwang Park;Kijoon Kim
2009 IEEE International Reliability Physics Symposium
Year: 2009 | Conference Paper |
Cited by: Papers (5)
Post-cycling data retention characteristics of a multilevel NOR flash memory with nitrided tunnel-oxide is presented. Results show that retention behavior is strongly related to the amount of interface trap generation rather than that of oxide trap, indicating detrapping from near interface trap is a major factor for threshold voltage shift. Process conditions including nitrogen concentration at t...Show More
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