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Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

H. Kimijima;T. Ohguro;B. Evans;B. Acker;J. Bloom;H. Mabuchi;Dim-Lee Kwong;E. Morifuji;T. Yoshitomi;H.S. Momose;M. Kinugawa;Y. Katsumata;H. Iwai

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

Year: 1999 | Conference Paper |

Cited by: Papers (8) | Patents (3)

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.Show More

Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

H. Kimijima;T. Ohguro;B. Evans;B. Acker;J. Bloom;H. Mabuchi;Dim-Lee Kwong;E. Morifuji;T. Yoshitomi;H.S. Momose;M. Kinugawa;Y. Katsumata;H. Iwai

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

Year: 1999 | Conference Paper |

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