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Signal duration sensitive degradation in scaled devices
2023 IEEE International Reliability Physics Symposium (IRPS)
Year: 2023 | Conference Paper |
Defect generation controlling device degradation is found to be highly sensitive to the signal duration in circuitry-relevant operation frequencies (GHz). Stressing devices in ns-time range reveals greatly extended device lifetimes compared to conventional evaluation conditions. The role of energy generation/dissipation in scaled devices is discussed.Show More
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices
SS Teja Nibhanupudi;Dmitry Veksler;Anupam Roy;Matthew Coupin;Kevin C. Matthews;Jamie Warner;Gennadi Bersuker;Jaydeep P. Kulkarni;Sanjay K. Banerjee
Resistive switching in 2D materials such as hexagonal boron nitride (hBN) and Transition Metal Dichalcogenides (TMDs) have been demonstrated recently [1]–[3]. These memory devices with an ultra-thin switching layer have the potential to achieve low operating voltages, low variability and are also suitable for flexible electronic applications [4]. Here we report the first experimental observation o...Show More
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics
J. Farmer;D. Veksler;E. Tang;G. Bersuker;D. Z. Gao;A.-M. El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen
2022 IEEE International Reliability Physics Symposium (IRPS)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
A simulation package for CNT memory cells is developed, based on computational modeling of both the mesoscopic structure of carbon nanotube films and the electrical conductivity of inter-CNT contacts. The developed package enables the modeling of various electrical measurements and identification of a range of operation conditions delivering desirable device characteristics. This approach opens th...Show More
Mitigating switching variability in carbon nanotube memristors
J. Farmer;W. Whitehead;A. Hall;D. Veksler;G. Bersuker;D. Gao;Al-Moatasem El-Sayed;T. Durrant;A. Shluger;T. Rueckes;L. Cleveland;H. Luan;R. Sen
2021 IEEE International Reliability Physics Symposium (IRPS)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics.Show More
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions
D. Veksler;G. Bersuker;A. W. Bushmaker;M. Mason;P. R. Shrestha;K. P. Cheung;J. P. Campbell;T. Rueckes;L. Cleveland;H. Luan;D. C. Gilmer
2020 IEEE International Reliability Physics Symposium (IRPS)
Year: 2020 | Conference Paper |
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.Show More
Switching Variability Factors in Compliance-Free Metal Oxide RRAM
D. Veksler;G. Bersuker;A. W. Bushmaker;P. R. Shrestha;K. P. Cheung;J. P. Campbell
2019 IEEE International Reliability Physics Symposium (IRPS)
Year: 2019 | Conference Paper |
Cited by: Papers (3)
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy consumed in a switching process. This study indicates that variability is reduced (suppressed) in more resistive filaments.Show More
Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance
D. J. McCrory;P. M. Lenahan;D. M. Nminibapiel;D. Veksler;J. T. Ryan;J. P. Campbell
We observe a gamma-irradiation-induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects, which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g value of 2.001 ± 0.0003. The response increases dramatically wit...Show More
Analysis and Control of RRAM Overshoot Current
Pragya R. Shrestha;David M. Nminibapiel;Jason P. Campbell;Jason T. Ryan;Dmitry Veksler;Helmut Baumgart;Kin P. Cheung
To combat the large variability problem in resistive random access memory, current compliance elements are commonly used to limit the in-rush current during the forming operation. Regardless of the compliance element (1R-1R or 1T-1R), some degree of current overshoot is unavoidable. The peak value of the overshoot current is often used as a predictive metric of the filament characteristics and is ...Show More
Local Field Effect on Charge-Capture/Emission Dynamics
Charge-capture/emission is ubiquitous in electron devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many electron device models, the individuality of immobile charge is commonly replaced with the average quantity of charge density. This has worked remarkably well ...Show More
Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation
Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS devices. The analysis of capacitance–voltage (C–V) measurements on these new materials with high-k gate dielectrics is a critical technique to determine many important gate-stack parameters. While there are very useful C–V analysis tools available to the community, these tools are all limited in the...Show More
Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1−x and InxGa1−xAs: Part I—Model Description and Validation
Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle
Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data
Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle
Capacitance-voltage ( $C$ – $V$ ) measurement and analysis is highly useful for determining important information about MOS gate stacks. Parameters such as the equivalent oxide thickness (EOT), substrate doping density, flatband voltage, fixed oxide charge, density of interface traps ( ${D}_{ \rm {it}}$ ), and effective gate work function can all be extracted from experimental $C$ – $V$ curves. ...Show More
Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data
Sarkar R. M. Anwar;William G. Vandenberghe;Gennadi Bersuker;Dmitry Veksler;Giovanni Verzellesi;Luca Morassi;Rohit V. Galatage;Sumit Jha;Creighton Buie;Adam T. Barton;Eric M. Vogel;Christopher L. Hinkle
Impact of RRAM Read Fluctuations on the Program-Verify Approach
David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung
IEEE Electron Device Letters
Cited by: Papers (16)
The stochastic nature of the conductive filaments in oxide-based resistive memory resistive random access memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that the program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this letter, w...Show More
Pulsed I-V on TFETs: Modeling and Measurements
Quentin Smets;Anne Verhulst;Ji-Hong Kim;Jason P. Campbell;David Nminibapiel;Dmitry Veksler;Pragya Shrestha;Rahul Pandey;Eddy Simoen;David Gundlach;Curt Richter;Kin P. Cheung;Suman Datta;Anda Mocuta;Nadine Collaert;Aaron V.-Y. Thean;Marc M. Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi-level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) cause unwanted leakage current. In this paper, we study these degradation mechanisms using the pulsed I-V technique. Our simulations show pulsed I-V can fully suppress oxide trap c...Show More
Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling
David M. Nminibapiel;Dmitry Veksler;Pragya R. Shrestha;Ji-Hong Kim;Jason P. Campbell;Jason T. Ryan;Helmut Baumgart;Kin P. Cheung
IEEE Electron Device Letters
Cited by: Papers (17)
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the tens of microseconds. The fluctuation amplitude, on the other hand, does not decay noticeably over the entire millisecond read time. While post-pr...Show More
InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements
T. Chidambaram;D. Veksler;S. Madisetti;M. Yakimov;V. Tokranov;S. Oktyabrsky
IEEE Electron Device Letters
Cited by: Papers (4)
In this letter, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel $\approx 1\times 10^{12}$ cm $^{-2}$ . A comparison with mobility values estimated from transistor characteristics reveals a significant under...Show More
Device-level jitter as a probe of ultrafast traps in high-k MOSFETs
D. Veksler;J. P. Campbell;J. Zhong;H. Zhu;C. Zhao;K. P. Cheung
2016 IEEE International Reliability Physics Symposium (IRPS)
Year: 2016 | Conference Paper |
A methodology for the evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on the density of ultra-fast electron traps (with 500 ps to 5 ns characteristic capture/emission times) in a high-k/Si nMOSFET. It is shown, that in spite of an observed increase of timing jitter after PBTI stress, this...Show More
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
B. L. Ji;H. Li;Q. Ye;S. Gausepohl;S. Deora;D. Veksler;S. Vivekanand;H. Chong;H. Stamper;T. Burroughs;C. Johnson;M. Smalley;S. Bennett;V. Kaushik;J. Piccirillo;M. Rodgers;M. Passaro;M. Liehr
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev...Show More
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs
G. Sereni;L. Vandelli;R. Cavicchioli;L. Larcher;D. Veksler;G. Bersuker
2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
In this work we apply a new spectroscopic technique based on the simulation of capacitance and conductance measurements to investigate the defect density in high-κ/III-V MOSFETs. This technique exploits the simulation of C-V and G-V curves measured over a wide frequency range to extract the defect density map in the energy-position domain. The technique was used to investigate the role of the subs...Show More
Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
Tae-Woo Kim;Hyuk-Min Kwon;Seung Heon Shin;Chan-Soo Shin;Won-Kyu Park;Eddie Chiu;Manny Rivera;Jae Ik Lew;Dmitry Veksler;Tommaso Orzali;Dae-Hyun Kim
IEEE Electron Device Letters
Cited by: Papers (18)
We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300°C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance-voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and...Show More
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics
A. Padovani;L. Larcher;L. Vandelli;M. Bertocchi;R. Cavicchioli;D. Veksler;G. Bersuker
Proceedings of the 2015 International Conference on Microelectronic Test Structures
Year: 2015 | Conference Paper |
We present a comprehensive simulation framework to interpret electrical characteristics (I-V, C-V, G-V, Charge-Pumping, BTI, CVS, RVS, ∶) commonly used for material characterization and reliability analysis of gate dielectric stacks in modern semiconductor devices. By accounting for the physical processes controlling charge transport through the dielectric (e.g. carrier trapping/de-trapping at the...Show More
A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors
Yuan Taur;Han-Ping Chen;Qian Xie;Jaesoo Ahn;Paul C. McIntyre;Dennis Lin;Abhitosh Vais;Dmitry Veksler
The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley-Read-Hall type of capture and emission model for interface states. The new model explains the often observed upturn of MOS conductance at high frequencies when biased in inversion. The unified two-band model fully covers both types of charge traps in all MOS bias reg...Show More
A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs
We propose a new defect characterization technique for high-k dielectric stacks in III-V MOSFETs. This technique allows extracting the defect density from the simulations of the C-V and G-V characteristics at different frequencies. The simulation is performed using a physical distributed compact model, where the trap-assisted capture and emission processes are described in the framework of the mul...Show More
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods
F. M. Puglisi;D. Veksler;K. Matthews;G. Bersuker;L. Larcher;A. Padovani;L. Vandelli;P. Pavan
2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
We report on a methodology to assist fabrication process development using a case study of high thermal budget (HTB) and low thermal budget (LTB) fabrication flows for high-k/metal gate stacks in n-MOSFETs. This methodology is supported by simulations that self-consistently extract defect characteristics by simultaneously considering a set of electrical measurement data, specifically stress-induce...Show More
Activation of electrically silent defects in the high-k gate stacks
2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
Cited by: Papers (1)
We investigate a possibility that changes of electrical characteristics of the nFETs high-k gate stacks under moderate voltage stresses are induced primarily by a reversible activation of the pre-existing defects rather than generation of new structural defects. These electrically silent pre-cursor defects become responsible for measured stress-induced instabilities of transistor parameters after ...Show More
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs
G. Sereni;L. Vandelli;L. Larcher;L. Morassi;D. Veksler;G. Bersuker
2014 IEEE International Reliability Physics Symposium
Year: 2014 | Conference Paper |
Cited by: Papers (5)
Increased CMOS performance requires the introduction of alternative materials as substrate and gate dielectrics. III-V materials and in particular InGaAs can provide superior electron mobility compared to classic Si substrates. However, such substrate materials have non-optimal dielectric-semiconductor interfaces that can drastically reduce the device performance. Techniques for the extraction of ...Show More
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