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Jean Anne C. Incorvia - IEEE Xplore Author Profile

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The rapid evolution of artificial intelligence technologies has escalated the need for compact, high-density memory solutions [1] . Monolayer hexagonal boron nitride resistive random access memory (ML hBN RRAM) emerges as a particularly promising candidate due to its simple, ultra-thin metal-insulator-metal structure. However, these atomristor devices usually wear out quickly, with a maximum of 10...Show More
We demonstrate device codesign using reinforcement learning for probabilistic computing applications. We use a spin orbit torque magnetic tunnel junction model (SOT-MTJ) as the device exemplar. We leverage reinforcement learning (RL) to vary key device and material properties of the SOT-MTJ device for stochastic operation. Our RL method generated different candidate devices capable of generating s...Show More
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for AC...Show More
Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiate...Show More
We summarize our progress towards monolithic and analog neuromorphic computing utilizing domain wall-magnetic tunnel junction (DW-MTJ) devices. We have previously shown device performance for binary logic DW-MTJ devices. Here, we expand on that work by demonstrating neuromorphic functionality using shape-dependent tunability. We measure multi-weight synapses and stochastic neurons monolithically f...Show More
In this study, micromagnetic simulations of a magnetic skyrmion reshuffling chamber for probabilistic computing applications are performed. The skyrmion shuffling chamber is modeled with a custom current density masking technique to capture current density variation, grain boundary variations, and anisotropy changes. The results show that the skyrmion oscillatory dynamics contribute to the system'...Show More
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy operation, and radiation hardness. Here, we augment the DW-MTJ logic gate with voltage-controlled magnetic anisotropy (VCMA) to improve the reliability of logical conc...Show More
Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads. Our work leverages the underlying physics of emerging devices to develop probabilistic neural circuits for RNGs from a given distribution. However, codesign for...Show More
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. Device candidates for this application need to produce highly random “coinflips” while also having tunable biasing of the coin. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dynamics, often using sp...Show More
Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neuromorphic systems should exploit the biomimetic behavior of emerging nanodevices. In particular, exceptional opportunities are provided by the non-volatility and analog capabilities of spintronic devices. While spintronic d...Show More
Neuromorphic computing is a promising candidate for beyond-von Neumann computer architectures, featuring low power consumption and high parallelism. Lateral inhibition and winner-take-all (WTA) features play a crucial role in neuronal competition of the nervous system as well as neuromorphic hardwares. The domain wall - magnetic tunnel junction (DWMTJ) neuron is an emerging spintronic artificial n...Show More
Magnetic skyrmions are nanoscale whirls of magnetism that can be propagated with electrical currents. The repulsion between skyrmions inspires their use for reversible computing based on the elastic billiard ball collisions proposed for conservative logic in 1982. In this letter, we evaluate the logical and physical reversibility of this skyrmion logic paradigm, as well as the limitations that mus...Show More
CMOS devices display volatile characteristics and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and analog features, which are well suited to neuromorphic computing. Consequently, these novel devices are at the forefront of beyond-CMOS artificial intelligence applications. However, a large quantity of th...Show More
Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial...Show More
We study the impact of irradiation on magnetic tunnel junction (MTJ) films with perpendicular magnetic anisotropy (PMA) and spin-orbit torque (SOT) switching using magneto-optical Kerr effect and transmission electron microscopy. Our results show that the thin-film stack is robust to gamma ionizing dose up to 1 Mrad(Si) and Ta1+ ion irradiation fluences up to 1012 ions/cm2, showing SOT PMA MTJs ar...Show More
The pass transistor logic (PTL) family enables compact circuits to reduce area and power consumption, but inter-stage inverters are required for signal integrity and complementary signals. Similarly, dual-gate ambipolar field-effect transistors are exceptionally logically expressive and provide a single-transistor XNOR operation, but numerous inverters are required to provide complementary signals...Show More
Spintronic devices, especially those based on motion of a domain wall (DW) through a ferromagnetic track, have received a significant amount of interest in the field of neuromorphic computing because of their non-volatility and intrinsic current integration capabilities. Many spintronic neurons using this technology have already been proposed, but they also require external circuitry or additional...Show More
Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system consists of unsupervised (clustering) as well as supervised sub-systems, and generalizes quickly (with few samples). We demonstrate interactions between physical prop...Show More
The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables efficient logic circuit design because of its low energy consumption, small size, and non-volatility. Furthermore, the DW-MTJ is one of the few spintronic devices for which a direct cascading mechanism is experimentally demonstrated without any extra buffers; this enables potential design and fabrication of a lar...Show More
The domain-wall (DW)-magnetic tunnel junction (MTJ) device implements universal Boolean logic in a manner that is naturally compact and cascadable. However, an evaluation of the energy efficiency of this emerging technology for standard logic applications is still lacking. In this article, we use a previously developed compact model to construct and benchmark a 32-bit adder entirely from DW-MTJ de...Show More
Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems. Previous proposals for spintronic artificial neurons required external stimuli to perform the leaking functionality, one of the three fundamental functions of a leaky integrate-and-fire (LIF) neuron. The use of this ext...Show More
The spin-transfer torque domain wall (DW) magnetic tunnel junction (MTJ) enables spintronic logic circuits that can be directly cascaded without deleterious signal conversion circuitry and is one of the only spintronic devices for which cascading has been demonstrated experimentally. However, experimental progress has been impeded by a cumbersome modeling technique that requires a combination of m...Show More
Spintronic three-terminal magnetic-tunnel-junction (3T-MTJ) devices have gained considerable interest in the field of neuromorphic computing. Previously, these devices required external circuitry to implement the leaking functionality that leaky integrate-and-fire (LIF) neurons should display. However, the use of external circuitry results in decreased device efficiency. We previously demonstrated...Show More
Control of cation injection into the switching layer of conductive-bridge random access memory (CBRAM) during switching is a critical factor for CBRAM reliability. Although extrinsic approaches such as the insertion of a transistor in series have proven effective, solutions intrinsic to the CBRAM itself, which are desired for high density cross-point or 3-D vertical memory arrays, are quite limite...Show More