Chao Li - IEEE Xplore Author Profile

Scheduled Maintenance on Monday 1/13/2025

Single article sales and account management will be unavailable from 5:00 AM - 7:00 PM ET (09:00 - 23:00 UTC). We apologize for the inconvenience.

IEEE.org
IEEE Xplore
IEEE SA
IEEE Spectrum
More Sites

- Donate
- Personal Sign In

Institutional Sign In

Institutional Sign In

ADVANCED SEARCH

Author details

Chao Li

Publications

32

Citations

314

Publications by Year

20162025

Co-Authors:

Xuhua BaoZheng ChenXianhai ChenGuorong ChenCheng Chi

Show All Co-Authors (44)

Chao Li

Affiliation

Beijing Key Laboratory of Security and Privacy in Intelligent Transportation

Beijing Jiaotong University

Beijing, China

Publication Topics

Smart Contracts,
Federated Learning,
Multi-party Computation,
Public Key,
Secret Key,
Cryptocurrencies,
Decryption Key,
Global Model,
Inference Attacks,
Single Point Of Failure,
Access Control,
Application Programming Interface

Biography

Chao Li (Member, IEEE) received the MSc degree from Imperial College London, and the PhD degree from the School of Computing and Information, University of Pittsburgh. He is currently an associate professor with the School of Computer Science and Technology, Beijing Jiaotong University. His current research interests include focused on Blockchain and Data Privacy.(Based on document published on 19 August 2024).

Publications

32

Citations

314

Publications by Year

20162025

Co-Authors:

Xuhua Bao
Zheng Chen
Xianhai Chen
Guorong Chen
Cheng Chi

Show All Co-Authors (44)

Author's Published Works

Search History

Showing 1-3 of 3 results

Conferences (2)

Journals (1)

Sort

Filter Results

Show

Open Access Only

Range
Single Year
T. Ohguro(3)
M. Miyake(3)
M. Taguchi(3)
T. Warabino(3)
S. Miyamoto(3)
Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan(2)
Semiconductor Technology Academic Research Center, Kanagawa, Japan(2)
Sanyo Electric Corporation Limited, Osaka, Japan(1)
Graduate School of Advanced Sciences of Matter, Hiroshima University, Hiroshima, Japan(1)
Semiconductor Technology Academic Research Center, Yokohama, Kanagawa, Japan(1)
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings(1)
2006 International Conference on Simulation of Semiconductor Processes and Devices(1)
IEEE Transactions on Electron Devices(1)
IEEE(3)
Monterey, CA, USA(1)
Shanghai, China(1)
Circuit Simulation(3)
Gate Length(3)
Thermal Noise(3)
Additional Model Parameters(2)
Bessel Function(2)

Select All on Page

Sort By

Results

Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

T. Ezaki;T. Warabino;M. Miyake;N. Sadachika;D. Navarro;H. J. Mattausch;M. Miura-Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Year: 2006 | Conference Paper |

Cited by: Papers (1)

HTML

We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surfac...Show More

Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

T. Ezaki;T. Warabino;M. Miyake;N. Sadachika;D. Navarro;H. J. Mattausch;M. Miura-Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Year: 2006 | Conference Paper |

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 International Conference on Simulation of Semiconductor Processes and Devices

Year: 2006 | Conference Paper |

Cited by: Papers (4)

HTML

We have developed a high-frequency noise model for short channel MOSFETs by considering the position dependent surface potential which results in a non-uniform mobility distribution along the channel. The chosen approach successfully reproduces the induced-gate noise and the cross-correlation noise between drain and gate for short channel MOSFETs without additional model parameters. In particular,...Show More

Analysis and Compact Modeling of MOSFET High-Frequency Noise

T. Warabino;M. Miyake;N. Sadachika;D. Navarro;Y. Takeda;G. Suzuki;T. Ezaki;M. Miura-Mattausch;H. J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

2006 International Conference on Simulation of Semiconductor Processes and Devices

Year: 2006 | Conference Paper |

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 9 | Journal Article |

Cited by: Papers (92) | Patents (3)

HTML

The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximation...Show More

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura-Mattausch;N. Sadachika;D. Navarro;G. Suzuki;Y. Takeda;M. Miyake;T. Warabino;Y. Mizukane;R. Inagaki;T. Ezaki;H.J. Mattausch;T. Ohguro;T. Iizuka;M. Taguchi;S. Kumashiro;S. Miyamoto

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 9 | Journal Article |

IEEE Personal Account

Change username/password

Purchase Details

Payment Options
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

Follow

About IEEE Xplore | Contact Us | Help | Accessibility | Terms of Use | Nondiscrimination Policy | IEEE Ethics Reporting | Sitemap | IEEE Privacy Policy

A public charity, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.

© Copyright 2025 IEEE - All rights reserved, including rights for text and data mining and training of artificial intelligence and similar technologies.

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
View Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

About IEEE Xplore
Contact Us
Help
Accessibility
Terms of Use
Nondiscrimination Policy
Sitemap
Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Test Whats new message.