In this paper, we present a normally-off GaN-based transistor with extremely low on-state resistance fabricated by using Ge-doped n++GaN layer for ohmic contact. We developed a new GaN regrowth technique using Ge, which achieved extremely high doping level of 1 × 1020 cm-3, and thereby the lowest specific contact resistance of 1.5 × 10-6 Ω·cm2. Selectively deposited NiO gate using Atomic Layer Dep...Show More
