International Conference on Numerical Simulation of Optoelectronic Devices, (NUSOD)
Date
February 2025
O+E+S+C Ultra Broadband Hybrid Optical Fiber Amplifier
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):85 - 86
In this work, a hybrid optical amplifier for O+e+s+cband amplification using Praseodymium doped fiber amplifier (PDFA), Thulium doped fiber amplifier (TDFA) and Erbium doped fiber amplifier (EDFA) is presented by optimizing amplifier's physical and geometric parameters. A signal gain (G)> 17.11 dB and noise figure (NF)< 3.23 dB with a maximum gain of 48.09 dB at 1310 nm have been observed for the ...Show More
Deep Neural Network for Predicting Supercontinuum Broadening in Chalcogenide Photonic Quasi crystal Fiber
M. Valliammai;A. Bakiya;J. Mohanraj;Hiran Kumar Singh;Sathis Addanki;Rajan Rishav
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):37 - 38
Generation SuperContinuum (SC) is a complex nonlinear process caused by chaotic and unstable behaviour, especially simulated by short duration pump pulses when the optical fiber work on the anomalous dispersion region. Understanding the spectral broadening behavior is difficult due to variations in fiber length and input pulse parameters. To address this challenge, we introduce a Deep Neural Netwo...Show More
Simulation of Optical Planar Waveguide Sensor for Microplastics Detection in Water
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2022,Page(s):201 - 202
Cited by: Papers (1)
Nowadays, microplastics pollution has become a global concern as it endangers the ecology, marine animals, and cause health threats to human beings. This paper attempted to simulate an optical planar waveguide sensor for microplastics detection in water via Wave Optics Module-COMSOL Multiphysics®. The analyte refractive index was ranged from 1.4800 to 1.5000 RIU, in reference to the microplastics ...Show More
Machine Learning Assisted Material and Device Parameter Extraction from Measurements of Thin Film Semiconductor Devices
Evelyne Knapp;Mattia Battaglia;Sandra Jenatsch;Beat Ruhstaller
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2022,Page(s):133 - 134
Cited by: Papers (1)
The simulation of thin film semiconductor devices is challenging, partly due to the unknown material and device parameters. In this contribution, we present two different approaches to determine the missing material and device parameters from measurements. They both have in common that they are based on machine learning (ML) and numerical models. First, a numerical model describing the experiment ...Show More
Leveraging Machine Learning for Optimization of Internal Quantum Efficiency in Green LED
Chandra Prakash Singh;Satyansh Sharma;Harshit Jain;Kankat Ghosh
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
The advancement of green light-emitting diodes (green-LEDs) is essential for full-colour displays and efficient solid-state lighting. However, optimizing the internal quantum efficiency (IQE) of LEDs remains a complex challenge due to the interplay of numerous material and structural factors. This study explores the application of machine learning techniques to optimize the IQE of green-LEDs, usin...Show More
Analysis of Cs2TiBr6 Single-Halide Perovskite Solar Cell by Introducing IDL
Jaspinder Kaur;Syamantak Gupta;Rikmantra Basu;Ajay Kumar Sharma
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
Lead-based perovskite solar cells (PSCs) are popular in the photovoltaic industry for their remarkable properties, but issues like toxicity and instability limit their use. To address these problems, eco-friendly, lead-free, and stable Cesium Titanium Bromide (Cs2TiBr6) absorber material has been introduced. This work simulates an FTO/SnO2/IDL1/Cs2TiBr6/IDL2/MoOX/Au structure using SCAPS-1D incorp...Show More
Identifying Defects in Charge Trapping Related Phenomena
Dominic Waldhoer;Christian Schleich;Jakob Michl;Tibor Grasser
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):71 - 72
Charge trapping at oxide defects is a prevalent phenomenon in most modern nanoelectronic devices, leading to detrimental reliability issues like bias temperature instability (BTI), trap-assisted tunneling (TAT) or random telegraph noise (RTN). Although these effects are clearly visible in experiments, the microscopic nature of the involved defects remains elusive. However, an in-depth understandin...Show More
Zak Phase of a 1D Topological Photonic Crystal by Finite-Difference Time-Domain Simulation
Heejin Choi;Markus Scherrer;Seonyeong Kim;Sunae Seo;Kirsten Moselund;Chang-Won Lee
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
Topological properties of one-dimensional periodic systems are characterized by the Zak phase, which is essential for describing protected edge or surface states that are robust against disorder and perturbations. Here, we explicitly calculate the Zak phases of a one-dimensional topological photonic crystal with guided-mode resonance using the Finite-Difference Time-Domain method. The retrieved ti...Show More
Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions
Valerio Torrelli;Jesus Alberto Gonzalez Montoya;Alberto Tibaldi;Pierluigi Debernardi;Andrea Simaz;Mikhail A. Belkin;Michele Goano;Francesco Bertazzi
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2022,Page(s):55 - 56
Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 ÷ 4 μm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared ...Show More
On the sensitivity of optical fiber surface plasmon resonance based sensor for detection of dielectric analytes using COMSOL Multiphysics
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2019,Page(s):49 - 50
Cited by: Papers (3)
Due to the importance of the public health toward the exposure to hazardous gases, real-time and sensitive gas sensors are among the priorities at present. Among different types of gas sensors, optical sensors with advantages like high sensitivity, low cost, miniaturization, and online monitoring have received great attention between the researchers. In this article, a fiber optic sensor based on ...Show More
Design and Simulation of Apodized π-Phase Shifted FBG as Simultaneous Sensing of Strain, Temperature, and Vibration
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2019,Page(s):139 - 140
Bragg Gratings (FBGs) in Structural Health Monitoring (SHM) are used as an optical sensor to detect various physical phenomena to make the system more reliable and accurate. In this work, theoretical analysis and numerical simulation of an Apodized π-Phase Shifted Fiber Bragg Grating (π-PS FBG) sensor is proposed to evaluate the performance of this non-uniform FBG for simultaneous strain, temperat...Show More
Analysis and optimization of perovskite-silicon tandem solar cells by full opto-electronic simulation
Urs Aeberhard;Roger Häusermann;Andreas Schiller;Balthasar Blülle;Beat Ruhstaller
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2020,Page(s):37 - 38
Cited by: Papers (3)
We present a comprehensive opto-electronic simulation framework for the computational analysis and optimization of perovskite-silicon tandem solar cells, consisting of a combination of a multiscale optical model for the simultaneous consideration of interference in thin coatings and scattering at textured interfaces with a mixed electronic-ionic drift-diffusion transport model that captures the pe...Show More
Design and Optimizing Backside Grating Couplers in Si-Photonics Circuits
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):117 - 118
Cited by: Papers (1)
Grating couplers are essential in photonic systems, facilitating efficient light coupling between optical fibers and on-chip waveguides and allowing for wafer-level testing. With the increasing integration of photonics in communication systems like the internet, there is a growing need for grating couplers to be utilized on the backside of the chip, in addition to the top side. This paper presents...Show More
Ion implantation for semiconductor lasers
Anna Szerling;Maciej Kozubal;Marcin Gębski;Karolina Pągowska;Paweł Michałowski;Kamil Kosiel;Marek Ekielski;Tomasz Czyszanowski
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):39 - 40
Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. In this paper, we present in detail the theoretical simulations of ion implantation processes for deep electrical isolation of AlGaAs/GaAs quantum cascade and for vertical-cavity surface-e...Show More
Modelling and Performance Analysis of Physical and Electrical Properties of BaZrS3 Chalcogenide Perovskite Solar Cells
Devansh Gahlawat;Jaspinder Kaur;Rikmantra Basu;Ajay Kumar Sharma;Uma Rani
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):7 - 8
This study explores the application and utility of BaZrS3-based perovskite solar cells (PSCs) for thin-film photovoltaic applications. The proposed device exhibited stable current up to 1.1 eV and maintained over 65% quantum efficiency across a broad spectrum. The Mott-Schottky analysis indicated a bandgap of approximately 1.7 eV. Nyquist and Bode plots confirmed robust impedance behaviour. The de...Show More
Numerical NEGF-Based Study of Urbach Tails in III-V Materials and Superlattices
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
Numerical simulations that use the non-equilibrium Green's function (NEGF) method applied to an 8-band k.p Hamiltonian were performed for exemplary III-V material and superlattice with the intent to examine an influence of scattering processes on the formation of band tails. Results reveal that the Urbach parameter is not directly proportional to the value of perturbing potential but rather to its...Show More
Device Modeling and Optimization of MEMS Based Capacitive Pressure Sensor
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):17 - 18
Capacitive pressure sensors are widely used in various applications due to their advantages over other types of sensors, such as low power consumption, high resistance to temperature changes, and improved stability. This paper presents a performance analysis of a capacitive pressure sensor operating on the electro-mechanical interface. The analysis includes diaphragm deflection, sensitivity, linea...Show More
Study of Heterojunction Dual Gate Vertical TFET Applications in Gas Sensing
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
MOSFET based gas sensors have appeared as preferred choices for environmental safety across various sectors due to their durability, low cost, and rapid sensing capability. This work proposes the use of catalytic metals as gate contacts in Heterojunction Dual Gate Vertical TFET (HJ-DGVTFET) for gas sensing applications. For band-to-band tunnelling (BTBT), the vertical double-sided gate design offe...Show More
Numerical Study of Efficiency Enhancement of Nanostructured Silicon-Perovskite Tandem Thin Film Solar Cells.
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
Solar cells are one of the most promising sustainable, renewable and clean energy sources. Reflection loss is one of the major concerns in thin film solar cells technology. Nano-structuring of the top surface is one of the best methods to reduce the solar cell's reflection losses. Tandem technology enhances the absorption of sunlight in a broad spectrum. Nanostructured Si-Perovskite tandem thin fi...Show More
The nature of the band gap of GeSn alloys
Stefan Schulz;Christopher A. Broderick;Edmond J. O’Halloran;Eoin P. O’Reilly
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2018,Page(s):39 - 40
Cited by: Papers (2)
We present a detailed analysis of the electronic structure of GeSn alloys using density functional theory. Special attention is paid to Sn-induced conduction band mixing effects. Our calculations indicate a continuous evolution from an indirect to a direct band gap material with increasing Sn content. This finding is in stark contrast to the literature perception of a sharp transition at a fixed c...Show More
Effect of Mechanical Jitter on Higher-Order Incoherent Beam Combination System
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):3 - 4
The spot size variation due to mechanical jitter is calculated for the Hermite Gaussian (HG) incoherent beam combination system. It is observed that the spot size increases with an increase in mechanical jitter and higher modes HG beams experience less mechanical jitter effect compared to lower mode HG beams.Show More
Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications
Matteo G. C. Alasio;Mike Zhu;Antonio Fronteddu;Alessandro Cardinale;Andrea Ballarati;Enrico Bellotti;Giovanni Ghione;Alberto Tibaldi;Francesco Bertazzi;Marco Vallone;Michele Goano
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):107 - 108
Cited by: Papers (1)
We determined the velocities of photogenerated electrons and holes in FinFET-like lateral Ge-on-Si waveguide photodetectors with Monte Carlo transport simulation. The calculated carrier velocities were used in a 3D multiphysics model focused on the investigation of the electro-optic frequency response. The good match between the bandwidths predicted by the model and the corresponding experimental ...Show More
Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications
Matteo G. C. Alasio;Mike Zhu;Antonio Fronteddu;Alessandro Cardinale;Andrea Ballarati;Enrico Bellotti;Giovanni Ghione;Alberto Tibaldi;Francesco Bertazzi;Marco Vallone;Michele Goano
Dark current simulation of InP/InGaAs/InP p-i-n photodiode
X. D. Wang;W. D. Hu;X. S. Chen;W. Lu;H. J. Tang;T. Li;H. M. Gong
2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2008,Page(s):31 - 32
Cited by: Papers (3)
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.Show More
Modeling of pulse compressors using Kostenbauder matrices
Numerical Simulation of Optoelectronic Devices
Publication Year: 2010,Page(s):115 - 116
In this paper we present a method for modeling ultrashort-laser-pulse compressors/stretchers using Kostenbauder matrices. In this method, a Gaussian pulse is represented by a 2×2 complex Q-matrix and an optical element is represented by a 4×4 real K-matrix. This formalism models pulse compressors and performs full spatio-temporal analysis. Additionally, this formalism allows for uncertainty and se...Show More
Mixed-level simulation of opto-electronic devices
M. Bahl;E. Heller;J. S. Ayubi-Moak;W.-C. Ng;R. Scarmozzino;G. Letay;L. Schneider
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2016,Page(s):101 - 102
Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical modeling of which requires a mixed-level simulation approach combining FDTD (or RCWA) and Ray Tracing. The second is a CMOS Image Sensors (CIS), which req...Show More
Numerical Investigation on Microfluidic Integrated Side Polished Fiber to Detect Biological Analytes
M. Valliammai;J. Mohanraj;Balasubramanian Esakki;Lung-Jieh Yang;Chua-Chin Wang;Ranjan Rishav
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):31 - 32
To improve the integration and sensitivity of surface plasmonic resonance (SPR) detection systems, we have numerically inversigate the SPR microfluidic integrated side polished fiber (SPF) sensor to detect the biological analytes. The proposed device consists of PDMS microfluidic channel and few layer MoS2 nano coated SPF. Finally, the integrated microfluidic channel with SPF bio sensor evaluated ...Show More
Mirror particle effects in kinetic Monte Carlo simulations including Coulomb interaction with periodic boundaries
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2021,Page(s):141 - 142
We investigate the photoluminescence of low-dimensional disordered materials, as used e.g. in solar cells, by performing kinetic Monte-Carlo simulations of exciton hopping with periodic boundary conditions. In order to perform numerically efficient calculations, the box length Lbox should be as small as possible while maintaining physically meaningful results during the presence of exciton-exciton...Show More
Experimental VCSEL Digital Twin modeling for net 100 Gb/s/λ nonlinear Digital Pre-Distortion
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):101 - 102
We experimentally model a VCSEL-based optical transmitter for high speed intra data center interconnects using a convolutional neural network digital twin. The device is able to effectively reproduce the VCSEL linear and nonlinear distortions on PAM4 signals transmitted at 107.2 Gbps, thus enabling the optimization of nonlinear VCSEL-MMF digital pre-distorters.Show More
Machine-Learning-Enhanced NEGF Solver of Interband Cascade Laser
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):23 - 24
NEGF simulation of the interband cascade laser is performed taking into account various scattering proceses. The Hartree potential, important for device operation, is calculated by solving the Poisson equation with an excess charge approach. Support vector machine technique is used to effectively improve the charge classification. Results are compared with other methods of classification, showing ...Show More
Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)
Tariq Jamil;Muhammad Usman;Habib Ullah Jamal;Sibghatullah Khan
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2021,Page(s):67 - 68
Cited by: Papers (1)
The AlGaN-based deep ultraviolet lightemitting diodes (DUV LEDs) for the disinfection of SARS-2 (Covid-19) are proposed in this study. The optoelectronic characteristics of DUV LEDs are numerically analyzed. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are excellently improved in the proposed LED. This significant enhancement is due to the optimal re...Show More
Monte Carlo simulation of hot electron transport in III-N LEDs
Numerical Simulation of Optoelectronic Devices, 2014
Publication Year: 2014,Page(s):21 - 22
Cited by: Papers (1)
We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by dr...Show More
A model for the refractive index of amorphous silicon for FDTD simulation of photonics waveguides
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2017,Page(s):167 - 168
Cited by: Papers (7)
This paper presents an analysis of the material quality influence for amorphous silicon waveguides for microphotonic applications. Material quality is taken into account by a model based on the absorption coefficient data obtained by Constant Photocurrent Measurement (CPM) in the near infrared region. The GUTL (Gauss-Urbach-Tauc-Lorentz) model has been presented as an extension of the standard Urb...Show More
Computational Design of Optoelectronic Semiconductor Materials
Lijun Zhang;Xin-Gang Zhao;Yuhao Fu;Bangyu Xing;Dongwen Yang;Qiaoling Xu;Zhao Ran;Xinjiang Wang
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2018,Page(s):37 - 38
Cited by: Papers (1)
Machine Learning for Optimization of Mass-Produced Industrial Silicon Solar Cells
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2021,Page(s):51 - 52
Cited by: Papers (1)
We present a methodology where we combine numerical TCAD device modeling, machine learning and advanced statistics for getting a deeper understanding of how process variations influence device performance in mass produced crystalline silicon solar cells. For this, we use seven model input parameters that affect the mainstream solar cell design (PERC) and its performance the most and perform about ...Show More
Design and Performance Investigation of Compact and Fast Metaphotonics All-Optical Digital OR Gate
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):93 - 94
The paper presents an all-optical OR logic gate utilizing the phenomenon of light beam interference. The silicon substrate contains a two-dimensional photonic crystal (2D-PC) structure, which is created by arranging air holes in a precise configuration. A thorough investigation of the proposed metaphotonics gate is carried out using the finite-difference time-domain (FDTD) method. The findings hig...Show More
Finite-Difference Time-Domain Simulations of Surface Bragg Gratings
I. A. Nechepurenko;Y. Rahimof;M. R. Mahani;S. Wenzel;A. Wicht
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):3 - 4
Cited by: Papers (4)
Bragg gratings are an essential component of semiconductor lasers. One of the most precise methods to calculate an optical response of such a component is the 3D FDTD method. However, due to its computational effort, it is usually not used for the simulation of large structures. Here, we investigate the performance of 2D and 3D Finite-Difference Time-Domain (FDTD) methods for Bragg grating simulat...Show More
Physics-based modeling of AlGaAs tunnel junction VCSELs: a comparative appraisal
Alberto Gullino;Valerio Torrelli;Martino D’Alessandro;Alberto Tibaldi;Francesco Bertazzi;Michele Goano;Pierluigi Debernardi
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):99 - 100
Cited by: Papers (2)
In this paper, we adopt our in-house physics-based solver VENUS (Vcsel Electro-optho-thermal NUmerical Simulator) to assess the static output characteristics of an AlGaAs/GaAs TJ-VCSEL emitting at 850 nm. To this aim, VENUS is extended to exploit a combined drift-diffusion model and NEGF formalism, that accurately captures tunneling effects across the TJ. The results are compared to a commercial p...Show More
Impact of Bottom DBR Radius and Electric Aperture Radius on GaN VCSEL Operation
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):1 - 2
We present the results of a numerical analysis of a nitride-based vertical-cavity surface-emitting laser (VCSEL) with an upper mirror composed of a monolithic high-contrast grating (MHCG) and with a bottom dielectric mirror. Using numerical simulations, we investigated the impact of the size of the lower dielectric mirrors on laser performance. Additionally, we examined the effect of changing the ...Show More
Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2022,Page(s):215 - 216
Cited by: Papers (3)
This work investigates the performance of Cs2CuSbCl6-based lead-free perovskite solar cells for photovoltaic applications. Cs2CuSbCl6 has a bandgap of 1.7eV and it is a durable and non-toxic material. Cs2CuSbCl6 can absorb more photons and thus obtain high efficiency. This work has been performed using SCAPS-1D software with the focus on optimizing the absorber layer thickness in terms of solar ce...Show More
Generalized Photon Recycling Theory for 2D and 3D LED Simulation in Sentaurus Device
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
Publication Year: 2006,Page(s):127 - 128
We generalize the photon recycling effect to include three distinctive phenomena: amplified spontaneous emission, absorption and instantaneous re-emission processes. These processes can be directly inferred from the physical phenomenon of a spontaneous emission spectrum overlapping a stimulated gain spectrum. We incorporate this generalized photon recycling model into a 2D/3D ray tracing algorithm...Show More
Empirical Tight-Binding Parameterizations for Accurate Heterostructure and Alloy Calculations
Anh-Luan Phan;Daniele Soccodato;Alessia Di Vito;Alessandro Pecchia;Matthias Auf der Maur
2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2024,Page(s):11 - 12
Empirical tight-binding is a valuable and reliable tool for the calculation of electronic and optical properties in semiconductor heterostructures and alloys. It has been applied in many contexts, ranging from inorganic semiconductors like arsenides, antimonides, nitrides and their alloys to 2D materials and hybrid perovskites. Here we present recent activities in development and application of em...Show More
Modeling and simulation of LED optical component to enhance light extraction efficiency
Bin Xue;Pengzhi Lu;Peng Ren;Ning Zhang;Zhe Liu;Junxi Wang;Jinmin Li
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2016,Page(s):139 - 140
A simulated model consists of chip-on-board (COB) packaged light emitting diode (LED) array with silicon resin based optical component was built. The principle of the simulation was to investigate the roles of optical component feature play in light extraction efficiency (LEE) by adjusting shape and size of the component to obtain maximum optical output power. Since cylinder resin based optical co...Show More
Numerical modelling of frequency comb generation in nonlinear resonators
M. Erkintalo;F. Leo;T. Hansson;K. E. Webb;S. G. Murdoch;J. Anthony;I. Ricciardi;M. De Rosa;S. Wabnitz;S. Coen
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2016,Page(s):187 - 188
We present a comprehensive review of recent work on numerical modelling of frequency comb generation in coherently-driven nonlinear resonators. Specifically, we discuss modelling and nonlinear dynamics of frequency combs generated in Kerr nonlinear microresonators, emphasizing links to similar dynamics studied in macroscopic fibre cavities. In addition to established Kerr frequency comb generators...Show More
Modeling of halloysite-nanotube modified surface plasmon resonance sensor
Xin Xiong;Mei Yang;Hao Wang;Yajun Wang;Yunhan Luo;Mingxian Liu;Jieyuan Tang;Huihui Lu;Jianhui Yu;Heyuan Guan;Jun Zhang;Zhe Chen
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2017,Page(s):129 - 130
In this paper, a numerical model of halloysite nano-tubes (HNTs) modified surface plasmon resonance sensor is established and optimized. The simulations investigate the effect of HNTs size parameters on the SPR sensor performance. From this study we can find that the optimal design for halloysite modified SPR sensor.Show More
Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation
Dimitrios Konstantinou;Christophe Caillaud;Tanjil Shivan;Simon Rommel;Ulf Johannsen;Fabrice Blache;Franck Mallecot;Viktor Krozer;Idelfonso Tafur Monroy
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2020,Page(s):1 - 2
Cited by: Papers (6)
This work introduces a subsystem level cosimulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthes...Show More
Dynamic properties of two-state lasing quantum dot laser for external optical feedback resistant applications
Jianan Duan;Yueguang Zhou;Heming Huang;Bozhang Dong;Cheng Wang;Frédéric Grillot
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2020,Page(s):79 - 80
Cited by: Papers (1)
This work investigates the dynamics of two-state quantum dot lasers through semi-analytically solving a set of rate equations. Simulations reveal that the occurrence of excited state lasing reduces the damping factor and relaxation oscillation frequency of the laser while increases the linewidth enhancement factor associated to the ground state transition. These results are in good agreement with ...Show More
Photon Detection Efficiency simulation of InGaAs/InP SPAD
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2020,Page(s):1 - 2
Cited by: Papers (1)
We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve good matching between ...Show More
The lateral photovoltage scanning method (LPS): Understanding doping variations in silicon crystals
Stefan Kayser;Nella Rotundo;Jürgen Fuhrmann;Natasha Dropka;Patricio Farrell
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2020,Page(s):49 - 50
Cited by: Papers (1)
The lateral photovoltage scanning method (LPS) can be used to detect undesired impurities which appear in silicon crystals during growth. Our goal is to make a digital twin of the LPS method. To this end, we replace inflexible blackbox code with a physics preserving finite volume discretization, confirming three theoretical results via a new simulation strategy. By making the simulation transparen...Show More
Numerical analysis of multi-mode VCSELs for applications in high bitrate optical communication
Cristina Rimoldi;Lorenzo Columbo;Alberto Tibaldi;Pierluigi Debernardi;Mariangela Gioannini
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publication Year: 2023,Page(s):95 - 96
We analyze the dynamical behavior of multimode VCSELs with elliptical oxide aperture. An advanced electromagnetic solver is employed to determine the electric field modal thresholds and emission frequencies, while mode competition is simulated with a time-domain mode expansion approach that accounts for coherent effects and carrier-photon spatial coupling. Preliminary performance analysis with NRZ...Show More
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