Bragg gratings are an essential component of semiconductor lasers. One of the most precise methods to calculate an optical response of such a component is the 3D FDTD method. However, due to its computational effort, it is usually not used for the simulation of large structures. Here, we investigate the performance of 2D and 3D Finite-Difference Time-Domain (FDTD) methods for Bragg grating simulat...Show More
We present a monolithically integrated extended cavity diode laser at 778 nm with a 3 dB linewidth of 200 kHz @ 1 ms. This is the first successful demonstration of active layer removal in AlGaAs by a 2-step epitaxy manufacturing process.Show More
We present a novel approach for GaAs-based DBR diode lasers with an extended cavity. The developed chips exhibit a record small 3 dB linewidth of 25 kHz @ 1 ms at the wavelength of 1064 nm.Show More
