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Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate
Seung Joo Myoung;Hyunkyu Lee;Dong Hyeop Shin;Youngjin Seo;Wonjung Kim;Jung Rae Cho;Changwook Kim;Jong-Ho Bae;Sung-Jin Choi;Dong Myong Kim;Ickhyun Song;Dae Hwan Kim
IEEE Transactions on Electron Devices
Year: 2025 | Early Access Article |
In this study, indium-gallium-zinc oxide (InGaZnO, IGZO) thin-film transistors (TFTs) and memristors are integrated as one transistor-one memristor (1T1M) structure on flexible substrate, and its electrical characteristics are analyzed. The fabrication process includes the formation of IGZO TFTs on flexible substrates and the deposition of memristors on top of TFTs. For the integrated structure, m...Show More
Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate
Seung Joo Myoung;Hyunkyu Lee;Dong Hyeop Shin;Youngjin Seo;Wonjung Kim;Jung Rae Cho;Changwook Kim;Jong-Ho Bae;Sung-Jin Choi;Dong Myong Kim;Ickhyun Song;Dae Hwan Kim
Year: 2025 | Early Access Article |
A wideband single-ended-to-differential (S-to-D) low-noise amplifier (LNA) for ultra-wideband (UWB) wireless sensors and internet-of-things applications is presented. In order to simultaneously provide wideband input matching characteristics, low-noise performance, and flat in-band gain response, a common-source input stage with on-chip transformer-based reactive feedback network is proposed. With...Show More
Toward a Hybrid RF/Optical Lunar Communication System (LunarComm)
Waseem Raza;Ethan Abele;John O'Hara;Behnaz Sadr;Peter LoPresti;Ali Imran;Wooyeol Choi;Ickhyun Song;Serhat Altunc;Obadiah Kegege;Sabit Ekin
The prospect of mankind returning to the Moon has garnered a great amount of attention in recent years. Dozens of lunar missions are planned for the coming decade which will require the development of a sustainable communication infrastructure with high data rates and minimal latency. Space communication systems thus far have relied on Radio Frequency (RF) links alone, but recent developments in l...Show More
Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
Pujan K. C. Mishu;Moon-Kyu Cho;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler;Ickhyun Song
The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio-frequency (RF) voltage-controlled oscillators (VCOs) have been investigated and the performance of proposed VCOs (IM VCOs) is compared with VCOs with conventional forward-mode (FM) SiGe-HBTs (FM VCOs). Where the high-frequency p...Show More
A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile
Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;William B. Hunter;Douglas R. Denison;John D. Cressler
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Year: 2021 | Conference Paper |
A proposed wideband integrated 4-tap analog finite impulse response (AFIR) filter has been implemented in silicon germanium (SiGe) technology for use in direct-throughput of RF signals in the microwave and millimeter-wave spectrum. To simultaneously provide bandwidth and RF filtering profile tunability, a wideband coefficient/polarity control circuit and time delay elements are utilized. The propo...Show More
Highly-Efficient CMOS Rectifier for Wide Range of Input RF Power in Energy-Harvesting Systems
2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
Year: 2021 | Conference Paper |
Cited by: Papers (4)
We propose a CMOS rectifier with improved power conversion efficiency (PCE) at both low and high RF power, and enhanced dynamic range (DR). The proposed design utilizes 1) the additional boosting circuit to increase the overdrive voltage of transistors, which help achieve higher forward current and higher PCE at low RF power and 2) self-biasing technique implemented by additional diodes and capaci...Show More
Emulating UAV Motion by Utilizing Robotic Arm for mmWave Wireless Channel Characterization
Amit Kachroo;Collin A. Thornton;Md. Arifur Rahman Sarker;Wooyeol Choi;He Bai;Ickhyun Song;John F. O’Hara;Sabit Ekin
In this article, millimeter-wave (mmWave) wireless channel characteristics (Doppler spread and path loss modeling) for unmanned aerial vehicle (UAV)-assisted communication is analyzed and studied by emulating the real UAV motion using a robotic arm. The motion considers the actual turbulence caused by the wind gusts to the UAV in the atmosphere, which is statistically modeled by the widely used Dr...Show More
Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
Md Arifur R. Sarker;Anup P. Omprakash;Moon-Kyu Cho;John D. Cressler;Ickhyun Song
This letter presents the application of the fT-doubler technique, for the first time, to improve the unitygain frequency (fT) of inverse-mode (TM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). An fT-doubler structure, which used three identical SiGe HBTs with the same emitter area of 0.07 (width) × 0.9 (length) μm2, is implemented in a commercial 0.13-μm SiGe-BiCMOS technolog...Show More
Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET
IEEE Electron Device Letters
Cited by: Papers (33)
In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect transistor (FET) with variations of active area specifications including number of vertically stacked channels, metal gate thickness, and channel width, is investigated using TCAD simulations. Our research suggests that varying these architecture parameters not only affect overall performance of sub-5-nm node ...Show More
A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL
Saeed Zeinolabedinzadeh;Ickhung Song;Mehmet Kaynak;John D. Cressler
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Year: 2020 | Conference Paper |
Cited by: Papers (4)
A fully integrated, wide locking-range fundamental frequency SiGe phase-locked-loop (PLL) at D-band is proposed which utilizes coupled voltage-controlled-oscillators (VCOs) to generate and distribute balanced RF signals in a symmetric and compact form factor. The proposed technique facilitates the balanced LO distribution, increases the output power, improves the phase noise, and increases the loc...Show More
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models
Ilho Myeong;Juhyun Kim;Hyungwoo Ko;Ickhyun Song;Yongseok Kim;Hyungcheol Shin
This article presents a method for extracting a channel thermal noise (Sid) using analytical equations and measured noise parameters. Among the four noise parameters considered (Rn, Gopt, Bopt, and NFmin), the equations of Rn and NFmin were used to extract Sid, since the Sid extracted from Gopt and Bopt was affected more by measurement variations. NTNOI, the noise enhancement factor of the charge-...Show More
This paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirectional distributed amplifiers (BDAs). The reconfigurable functionality and fast mode selection are obtai...Show More
A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics
Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;Douglas R. Denison;John D. Cressler
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Year: 2019 | Conference Paper |
Cited by: Papers (1)
This paper presents a wideband integrated single-tap circuit for a general-purpose, high-performance transversal filter application, and which has been implemented in silicon germanium (SiGe) technology for use in direct-throughput processing of RF signals in the microwave and millimeter-wave spectrum. To provide wideband instantaneous reconfigurability and multi-function RF capability, the propos...Show More
A W-Band SiGe Transceiver with Built-in Self-Test
S. Zeinolabedinzadeh;A. C. Ulusoy;R. L. Schmid;F. Inanlou;I. Song;T. Chi;J. S. Park;H. Wang;J. D. Cressler
2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Year: 2019 | Conference Paper |
Cited by: Papers (6)
A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the health of the system while in use. In addition, it facilitates on-die measurement of the transmit and receive channels to aid in characterization of the transceivers inside a large phased array system. Measurement re...Show More
Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation
Moon-Kyu Cho;Ickhyun Song;Fleetwood E. Zachary;Ani Khachatrian;Jeffrey H. Warner;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler
We provide “best practices” for single-event transient (SET) mitigation using electrostatic discharge (ESD) protection techniques. We investigate the correlation between SET suppression and RF performance when ESD protection circuits for SET mitigation are combined with various RF switches. The three different single-pole single-throw (SPST) switch configurations (conventional design, floating bod...Show More
A 1–20 GHz Distributed, Stacked SiGe Power Amplifier
Sunil Rao;Tianyu Chang;Ickhyun Song;Moon-Kyu Chc;John D. Cressler
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Year: 2018 | Conference Paper |
Cited by: Papers (1)
This paper presents a wideband distributed power amplifier that operates from 1–20 GHz. The peak output power is 19.5 dBm, with a peak PAE of 28% at 1 GHz. The power amplifier utilizes a distributed amplifier topology with artificial transmission lines, as well as transistor stacking, to achieve high output power and wide bandwidth. For the amplifier core power cells, a stack-up of four SiGe HBTs ...Show More
Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
Ickhyun Song;Adilson S. Cardoso;Hanbin Ying;Moon-Kyu Cho;John D. Cressler
The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is con...Show More
A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2018 | Conference Paper |
Cited by: Papers (34)
This paper presents a true time delay (TTD)-based transmit/receive (T /R) chipset with 508 ps time delay and 31.5 dB amplitude control for large-scale wideband timed array. The proposed T /R chipset consists of a true time delay circuit, a switched T -type attenuator, and digital control circuits. To compensate the frequency dependent insertion loss characteristics of single-pole double-throw swit...Show More
A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair
This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip transformer-based input-output baluns are included in the design for single-ended measurement and characterization. The BDA was implemented using GlobalFoundries 8HP 0.13-μm SiGe BiCMOS technology. The forward and backward gains are 10 and 8.6 dB, wit...Show More
A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization
Moon-Kyu Cho;Ickhyun Song;Zachary E. Fleetwood;John D. Cressler
A 6-bit active digital step attenuator (DSA), which simultaneously achieves wide bandwidth, flat gain characteristics, and bidirectional operation, is proposed for wideband phased-array antennas. In addition, it supports bandwidth tuning and equalization function to reduce complexity and physical size of systems. The proposed circuit utilizes an active double-pole double-throw switch, which provid...Show More
Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations
A compact, low loss, wideband digital step attenuator (DSA) is presented. The proposed DSA utilizes amplitude/phase-compensated T-type attenuator cells, in which the locations of poles and zeros are manipulated for minimizing variations in attenuation and phase. In addition, the reduced T-type attenuator cells that eliminate series switch transistors are used to achieve low insertion loss (IL). Th...Show More
SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technol...Show More
SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler
p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
Ickhyun Song;Moon-Kyu Cho;Zachary E. Fleetwood;Yunyi Gong;Spyridon Pavlidis;Stephen P. Buchner;Dale McMorrow;Pauline Paki;Mehmet Kaynak;John. D. Cressler
The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole single-throw (SPST) switches have been designed in a complementary SiGe BiCMOS platform. The fabricated p-n-p-based RF switches p...Show More
An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
Moon-Kyu Cho;Ickhyun Song;Spyridon Pavlidis;Zachary E. Fleetwood;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler
The impact of electrostatic discharge (ESD) protection circuits on the single-event transients (SETs) of RF building blocks in a 130-nm SiGe BiCMOS (8HP) platform is investigated. For proof-of-concept that SET mitigation can be accomplished through the use of an ESD protection circuit, a single-pole single-throw (SPST) switch was implemented using triple-well nFETs. For substrate noise coupling su...Show More
Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver
Adrian Ildefonso;Ickhyun Song;George N. Tzintzarov;Zachary E. Fleetwood;Nelson E. Lourenco;Mason T. Wachter;John D. Cressler
The propagation of single-event transient (SET) signals in a silicon-germanium direct-conversion receiver carrying modulated data is explored. A theoretical analysis of transient propagation, verified by simulation, is presented. A new methodology to characterize and quantify the impact of SETs in communication systems carrying modulated data is proposed. The proposed methodology uses a pulsed rad...Show More
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