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In this paper, we propose an analytical model using the suppression factor for fast evaluation of the high-frequency channel noise in nanoscale MOSFETs for radio frequency and mixed-signal applications. The derived suppression factor expression can accurately predict the channel noise for both long- and short-channel MOSFETs working in all regions of operations. It only depends on two major proces...Show More
A theoretical analysis on low phase noise of voltage-controlled oscillators (VCOs) based on complementary cross-coupled LC VCO by 0.35-μm complementary metal oxide semiconductor technology is demonstrated. From the procedure of optimization steps, the excess noise factor of the amplifier coming from the active device has been determined. The proposed VCO operates at 2 GHz with phase noise of -116 ...Show More
A very low phase-noise planar X -band oscillator employing an active resonator has been demonstrated. The high frequency selectivity of the active filter, used as the resonator, is the key factor in phase-noise reduction. A design procedure to achieve the resonator's optimum performance for low phase-noise applications is presented. In particular, the effect of the excess noise introduced by the a...Show More
Analyses of phase noise in differential cross coupled inductance-capacitance (LC) oscillators and single-ended Colpitts oscillators are presented. Various noise sources in these oscillators are identified, and then their effects on phase noise are analyzed. To simulate the Impulse Sensitivity and Noise Modulation Factor waveforms of the above mentioned oscillators, the direct impulse response meas...Show More
We employed a cross correlation method to study current noise in phosphorescent organic light-emitting diodes. The noise spectra revealed two frequency-dependent components. The first component displays \({1/f}^{1.3}\) dependence and correlates with the light emission of the devices. The second component is dominant in low-bias regime and varies as \({1/f}^{2.8}\) . It is attributed to inhomogenei...Show More
This paper presents a transformer-based harmonic- rich-shaping voltage-controlled oscillator (VCO). Its active core features noise suppression and circulation to improve the phase noise (PN) performance, and its 2:2 transformer allows a very short common-mode (CM) return path without sacrificing the tank's quality factor. The proof-of-concept prototype is a 3.52GHz VCO in 65-nm CMOS. It scores a -...Show More
One of the dangerous technical leakage channels is acoustic information. The paper describes two designed noise generators: analog and digital. Their main researched characteristics: frequency range, noise quality factor. The methodology for calculating the entropy coefficient of noise quality is considered. Designed generators correspond to the considered criteria and can be integrated into the v...Show More
A 2.5 GHz low phase noise oscillator is presented in this paper. The oscillator was design using a Solidly Mounted BAW Resonator (SMR BAW) as resonant element. The resonator exhibits a parallel resonance Q factor around 1300 at 2.54 GHz. The core oscillator was designed using STMicroelectronics 65 nm CMOS technology. It exhibits 632 mV output (zero-to-pic) with phase noise performance of -92 dBc/H...Show More
Signal to noise ratio (SNR) is an important indicator to measure the performance of high-gain optical sensor. The article first introduced the operating principle of APD sensor. Then three kinds of noise are analyzed in detail. Determination method of optimum gain and computing method of noise equivalent power (NEP) under the condition are proposed basing on the discussion and analysis of APD sens...Show More
In this paper, we present a consistent perspective to interpret the channel noise of MOSFETs as suppressed shot noise for both long- and short-channel devices. We also derive an easy-to-use analytical equation for the shot noise suppression factor of MOSFETs working in the saturation region. The expression only relies on two process parameters - threshold voltage and effective oxide thickness, to ...Show More
In this study we use large signal closed loop transfer function and complex quality factor to design a low phase noise feedback oscillator. The method offers two major advantages. First it evaluates the closed loop transfer function, which inherently takes into account the impedance mismatch between the elements of the loop and the nonlinear behavior of the active device. These factors affect the ...Show More
In this paper the design of an oscillator based on active inductor (AI) is presented, and the advantages resulting from this approach in term of phase-noise reduction are illustrated. Replacing the inductor with the AI in a classical LC-resonator give significant advantages, due to the high quality factor of the AI and the corresponding high frequency-selectivity of the active resonator. As a proo...Show More
The bilateral filter (BF) is an important image denoising local filter. It reduces noise in images while preserving edges by means of nonlinear combination of local pixel values. Its formulation and implementation are both simple. However, the BF is not parameter-free. The set of the bilateral filter parameters has an important influence on its behavior and performance. They have to be chosen cons...Show More
Switching noise-induced voltage fluctuation might result in a serious timing skew or false triggering in a high-speed digital system. We propose a new approach called external coupled resistive termination (ECRT) for suppressing this noise. Analyzing the resonant field patterns reveals that the bulk noise is accumulated close to the plane edges because of the open-end boundary condition. Thus, add...Show More
In this paper, the effects of forward body bias (FBB) on high-frequency noise performance in deep-submicrometer CMOS transistors are presented. It was observed that noise parameters NFmin and R n in both N and PMOS increased significantly under FBB. FBB may appear as a great concern in the low noise circuit design. This is in contrast with the improvement of other device parameters induced by FBB,...Show More
This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (f/sub T/), low base resistance (r/sub b/), and high current gain (/spl beta/) using Si processing underlies the low level...Show More

Recording Integration–Reader Path

W. Don Huber

IEEE Transactions on Magnetics
Year: 2009 | Volume: 45, Issue: 10 | Journal Article |
Cited by: Papers (1)
An estimate of integrated signal-to-noise ratio (SNR) of the combination of the reader element with associated shunt-parallel resistance and magnetic medium through the interconnect, flexible printed circuit, and preamp is developed. A key result is the noise figure (NF) that relates the integrated input and output SNR of the system. Total common mode rejection or ground noise rejection is estimat...Show More

Recording Integration–Reader Path

W. Don Huber

Year: 2009 | Volume: 45, Issue: 10 | Journal Article |
The spectral shape of noise emissions from a 35-GHz gyroklystron input cavity is used to directly measure the cavity resonant frequency and quality factor under beam-loaded conditions. The quality factors obtained with this technique at a number of magnetic fields are found to be consistent with quality factors obtained from reflection coefficient measurements made at the identical operating point...Show More
Noise in cities has increased in the past decades, due to a growing urban development. In the last century, population movement to the greater cities, disorder planned city development and increase of the motor vehicle in the traffic have been produced noise pollution and other environmental problems. Management and reduction or urban noise has been called for in urban development plans. Noise com...Show More
The effects of resonator topology on the phase noise of LC oscillators are studied in this paper. It is shown that there is a neglected factor that can considerably influence the phase noise behavior of the oscillator. We designate this factor as the Inductance Energy Factor (IEF), which directly depends on the topology of the resonator. It is shown that through proper design of the resonator for ...Show More
In this paper the noise behavior of a novel Avalanche Ion Sensitive Field Effect Transistor (A-ISFET) is presented. The A-ISFET is an ion sensitive field effect transistor that can inherently deliver high sensitivity through a multiplication factor, M, similar to an avalanche photodiode, where they are used when the input signal is very weak. A physical model for both intrinsic and extrinsic noise...Show More
Shot noise contributes significantly to the drain current noise in short-channel MOSFETs. The transport of carriers at the source-side of the channel is dominated by diffusion, leading to shot noise. However, channel resistance introduces carrier scattering, which eventually causes suppression of shot noise. The degree of suppression is described by a scaling factor, known as the Fano factor. This...Show More
The effect of inductor quality factor (Q) on the noise figure (NF) of a folded cascode low noise amplifier (LNA) is thoroughly studied for different values of DC power consumption. At lower power levels, the contribution of inductor Q towards the overall noise figure is shown to be less. Area optimized inductors with lower Q values can be used in such designs. However, for higher power levels, ach...Show More
In this paper an accurate noise analysis for active mixers in 90 nm technology, based on the variations of the two parameters W/L (transistor size) and fLO (local oscillator frequency) is presented. The contribution of the gate resistance noise to the gate and drain total current noises is considered, whereas this noise is usually assumed to be an independent source in the literature. It is shown ...Show More
Homodyne (zero-IF) operation is very prone to low-frequency noise, partially contributed by the solid-state detector operated in large-signal (quasi-)periodic conditions. Shot noise is the major contributor to this noise if the detector is operated beyond its noise corner frequency. In this letter, we experimentally observe that the current spectral density of this shot noise in Schottky diode det...Show More