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Enhanced Color Quality of Phosphor-Converted White Laser Diodes Through Bicolor Phosphor-in-Glass | IEEE Journals & Magazine | IEEE Xplore

Enhanced Color Quality of Phosphor-Converted White Laser Diodes Through Bicolor Phosphor-in-Glass


Abstract:

In this work, phosphor-converted white laser diodes (pc-WLDs) with high color quality were fabricated by combining blue lasers and bicolor phosphor-in-glass (PiG) convert...Show More

Abstract:

In this work, phosphor-converted white laser diodes (pc-WLDs) with high color quality were fabricated by combining blue lasers and bicolor phosphor-in-glass (PiG) converters. The bicolor PiGs were prepared by printing and sintering green/red phosphor glass films on sapphire substrates, and then applied in the transmission type of pc-WLDs. The PiG-based white laser diodes (WLDs) display broadband emission and their optical performances were adjusted by varying the PiG film thickness. When the film thickness increases from 80 to 160~\mu \text{m} , the luminous flux and correlated color temperature (CCT) of PiG-based WLDs are gradually decreased, and they still have high color rendering index (CRI). At the film thickness of 160~\mu \text{m} , the PiG-based WLD achieves high color quality with a CRI of {R}_{a} = {88} , {R}_{{9}} = {91} , and {R}_{{13}} = {93} , a CCT of 4571 K, and a chromaticity coordinate of (0.3525, 0.3541) at a laser power of 2.4 W. Furthermore, the PiG-based WLD has stable color quality at high laser power and the luminous flux reaches to 553 lm at a laser power of 5 W. The results indicate that the bicolor PiG-based WLDs realize high-quality white light, which can promote the practical applications of laser lighting in high-quality fields.
Published in: IEEE Transactions on Electron Devices ( Volume: 68, Issue: 11, November 2021)
Page(s): 5652 - 5655
Date of Publication: 29 September 2021

ISSN Information:

Funding Agency:

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China

I. Introduction

Solid-state lighting (SSL) source has been widely applied in our daily life due to its high light efficiency, long lifetime, and compact size [1]–[3]. With the increasing demand of high-brightness lighting, the SSL devices with high input current and power density have been developed, such as multichip integrated light-emitting diodes (LEDs) [4]–[6]. Unfortunately, the LEDs have an inevitable problem of efficiency droop under high power density, which limits their application in high-brightness lighting [7], [8]. On the contrary, laser diodes (LDs) are treated as new generation of high-brightness devices owing to their advantages of ultrahigh power, ultrahigh brightness, directional light emission, and long irradiation distance [9]–[11]. Importantly, the LDs display no efficiency droop even at an input power density of 25 kWcm−2. These advantages promote the applications of LD device in automotive headlights, projection display, medical treatment, and visible light communication [12], [13].

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, China
School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
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