I. Introduction
Solid-state lighting (SSL) source has been widely applied in our daily life due to its high light efficiency, long lifetime, and compact size [1]–[3]. With the increasing demand of high-brightness lighting, the SSL devices with high input current and power density have been developed, such as multichip integrated light-emitting diodes (LEDs) [4]–[6]. Unfortunately, the LEDs have an inevitable problem of efficiency droop under high power density, which limits their application in high-brightness lighting [7], [8]. On the contrary, laser diodes (LDs) are treated as new generation of high-brightness devices owing to their advantages of ultrahigh power, ultrahigh brightness, directional light emission, and long irradiation distance [9]–[11]. Importantly, the LDs display no efficiency droop even at an input power density of 25 kWcm−2. These advantages promote the applications of LD device in automotive headlights, projection display, medical treatment, and visible light communication [12], [13].