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A Ku-Band SiGe Phased-Array Transceiver with 6-Bit Phase and Attenuation Control | IEEE Conference Publication | IEEE Xplore

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A Ku-Band SiGe Phased-Array Transceiver with 6-Bit Phase and Attenuation Control

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Abstract:

A Ku-band phased-array transceiver using 0.13- μm SiGe BiCMOS technology is proposed in this paper for satellite communication applications. With a 6-bit inductive compen...Show More

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Abstract:

A Ku-band phased-array transceiver using 0.13- μm SiGe BiCMOS technology is proposed in this paper for satellite communication applications. With a 6-bit inductive compensated attenuator and a 6-bit phase shifter integrated in the common-leg of the receive (RX) and transmit (TX) paths, the transceiver realizes 6-bit phase and attenuation control of the RF signal. The transceiver realizes larger than 20 dB gain, with RMS gain/phase error less than 1 dB/10° within 16-18 GHz. The whole transceiver occupies 2.7 × 2.5 mm² chip area.

Published in: 2021 IEEE International Symposium on Circuits and Systems (ISCAS)

Date of Conference: 22-28 May 2021

Date Added to IEEE Xplore: 27 April 2021

Print ISBN:978-1-7281-9201-7

Print ISSN: 2158-1525

DOI: 10.1109/ISCAS51556.2021.9401162

Conference Location: Daegu, Korea

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

I. Introduction

In typical phased-array systems, large numbers of T/R modules still dominate the total cost. There is a technical trend to design low-cost phased-arrays using silicon technologies for mobile satellite communication and radar systems [1]–[4]. Although the power delivering and noise performance of silicon-based chips can’t outperform III-V semiconductors such as GaAs or InP, silicon-based phased-array chips benefit from much larger integration density and lower cost. SiGe BiCMOS technology is becoming especially popular as a compromise due to its both good RF performance and low cost.

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

Institute of Integrated Circuits and Systems (IICS), University of Electronic Science and Technology of China, Chengdu, China

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